×

Semiconductor device having low impedance and method of manufacturing the same

  • US 9,887,286 B2
  • Filed: 09/14/2015
  • Issued: 02/06/2018
  • Est. Priority Date: 12/12/2014
  • Status: Active Grant
First Claim
Patent Images

1. A semiconductor device comprising:

  • an n−

    type epitaxial layer disposed on a first surface of an n+ type silicon carbide substrate;

    an n+ region disposed on the n−

    type epitaxial layer;

    first and second trenches disposed in the n−

    type epitaxial layer and the n+ region;

    first and second gate insulating layers disposed inside the first and second trenches, respectively;

    first and second gate electrodes disposed on the first and second gate insulating layers, respectively;

    a p-type region disposed on two sides of one of the first and second trenches;

    an oxidation film disposed on the first and second gate electrodes;

    a source electrode disposed on the n+ region and the oxidation film; and

    a drain electrode disposed on a second surface of the n+ type silicon carbide substrate,wherein a first channel is disposed on two sides of the first trench and a second channel is disposed on two sides of the second trench,wherein the first and second gate insulating layers have different thicknesses, andwherein the first and second gate electrodes have different depths.

View all claims
  • 1 Assignment
Timeline View
Assignment View
    ×
    ×