Light emitting device and method for manufacturing light emitting device

• US 9,887,329 B2
• Filed: 10/15/2015
• Issued: 02/06/2018
• Est. Priority Date: 02/09/2010
• Status: Active Grant

• Current Assignee: Nichia Corporation
• Original Assignee: Nichia Corporation
• Inventors: Yamada, Motokazu
• Primary Examiner(s): Armand, Marc
• Assistant Examiner(s): Kilpatrick, Warren H
• Application Number:
  US14/884,718
• Publication Number:
  US 20160035952A1
• Time in Patent Office: 845 Days
• Field of Search: 257 98
• CPC Class Codes: H01L 2224/05599 Material
• CPC Class Codes: H01L 2224/45015 being circular
• CPC Class Codes: H01L 2224/45124 Aluminium (Al) as principal constituent
• CPC Class Codes: H01L 2224/45144 Gold (Au) as principal constituent
• CPC Class Codes: H01L 2224/45147 Copper (Cu) as principal constituent
• CPC Class Codes: H01L 2224/45169 Platinum (Pt) as principal constituent
• CPC Class Codes: H01L 2224/48137 the bodies being arranged next to each other, e.g. on a common substrate
• CPC Class Codes: H01L 2224/48139 with an intermediate bond, e.g. continuous wire daisy chain
• CPC Class Codes: H01L 2224/48227 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/48228 the bond pad being disposed in a recess of the surface of the item
• CPC Class Codes: H01L 2224/49175 Parallel arrangements
• CPC Class Codes: H01L 2224/73204 the bump connector being embedded into the layer connector
• CPC Class Codes: H01L 2224/73265 Layer and wire connectors
• CPC Class Codes: H01L 2224/83192 wherein the layer connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/8592 Applying permanent coating, e.g. protective coating
• CPC Class Codes: H01L 2224/92247 the second connecting process involving a wire connector
• CPC Class Codes: H01L 24/45 of an individual wire connector
• CPC Class Codes: H01L 24/48 of an individual wire connector
• CPC Class Codes: H01L 24/49 of a plurality of wire connectors
• CPC Class Codes: H01L 25/0753 the devices being arranged next to each other
• CPC Class Codes: H01L 25/167 : comprising optoelectronic devices, e.g. LED, photodiodes
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00012 : Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01004 : Beryllium [Be]
• CPC Class Codes: H01L 2924/01005 : Boron [B]
• CPC Class Codes: H01L 2924/01006 : Carbon [C]
• CPC Class Codes: H01L 2924/01012 : Magnesium [Mg]
• CPC Class Codes: H01L 2924/01013 : Aluminum [Al]
• CPC Class Codes: H01L 2924/01014 : Silicon [Si]
• CPC Class Codes: H01L 2924/01024 : Chromium [Cr]
• CPC Class Codes: H01L 2924/01025 : Manganese [Mn]
• CPC Class Codes: H01L 2924/01028 : Nickel [Ni]
• CPC Class Codes: H01L 2924/01029 : Copper [Cu]
• CPC Class Codes: H01L 2924/0103 : Zinc [Zn]
• CPC Class Codes: H01L 2924/01032 : Germanium [Ge]
• CPC Class Codes: H01L 2924/01033 : Arsenic [As]
• CPC Class Codes: H01L 2924/01038 : Strontium [Sr]
• CPC Class Codes: H01L 2924/01042 : Molybdenum [Mo]
• CPC Class Codes: H01L 2924/01045 : Rhodium [Rh]
• CPC Class Codes: H01L 2924/01047 : Silver [Ag]
• CPC Class Codes: H01L 2924/0105 : Tin [Sn]
• CPC Class Codes: H01L 2924/01058 : Cerium [Ce]
• CPC Class Codes: H01L 2924/01063 : Europium [Eu]
• CPC Class Codes: H01L 2924/01065 : Terbium [Tb]
• CPC Class Codes: H01L 2924/01074 : Tungsten [W]
• CPC Class Codes: H01L 2924/01077 : Iridium [Ir]
• CPC Class Codes: H01L 2924/01078 : Platinum [Pt]
• CPC Class Codes: H01L 2924/01079 : Gold [Au]
• CPC Class Codes: H01L 2924/01082 : Lead [Pb]
• CPC Class Codes: H01L 2924/01322 : Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
• CPC Class Codes: H01L 2924/014 : Solder alloys
• CPC Class Codes: H01L 2924/09701 : Low temperature co-fired ceramic [LTCC]
• CPC Class Codes: H01L 2924/12035 : Zener diode
• CPC Class Codes: H01L 2924/12041 : LED
• CPC Class Codes: H01L 2924/12042 : LASER
• CPC Class Codes: H01L 2924/12044 : OLED
• CPC Class Codes: H01L 2924/181 : Encapsulation
• CPC Class Codes: H01L 2924/2076 : equal to or larger than 100 microns
• CPC Class Codes: H01L 2924/3025 : Electromagnetic shielding
• CPC Class Codes: H01L 2933/005 : relating to encapsulations
• CPC Class Codes: H01L 33/005 : Processes
• CPC Class Codes: H01L 33/483 : Containers
• CPC Class Codes: H01L 33/486 : adapted for surface mounting
• CPC Class Codes: H01L 33/50 : Wavelength conversion elements
• CPC Class Codes: H01L 33/52 : Encapsulations
• CPC Class Codes: H01L 33/54 : having a particular shape
• CPC Class Codes: H01L 33/56 : Materials, e.g. epoxy or silicone resin
• CPC Class Codes: H01L 33/60 : Reflective elements
• CPC Class Codes: H01L 33/62 : Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Abstract

A light emitting device (100) includes a base member (101), electrically conductive members (102a, 102b) disposed on the base member (101), a light emitting element (104) mounted on the electrically conductive members (102a, 102b), an insulating filler (114) covering at least a portion of surfaces of the electrically conductive members (102a, 102b) where the light emitting element (104) is not mounted, and a light transmissive member (108) covering the light emitting element (104).

Claims

1. A light emitting device comprising:

a light emitting element comprising a semiconductor layer, a transparent substrate disposed on a top surface of the semiconductor layer, and a plurality of electrodes disposed on a bottom surface of the semiconductor layer;

a reflective member comprising an insulating filler;

a light transmissive member covering at least a top surface of the transparent substrate;

a plurality of electrically conductive members connected to respective bottom surfaces of the electrodes,

wherein the reflective member covers at least side surfaces of the electrically conductive members,

wherein bottom surfaces of the electrically conductive members are exposed from a bottom surface of the reflective member,

wherein a bottommost surface of the light emitting device comprises the bottom surfaces of the electrically conductive members and the bottom surface of the reflective member,

wherein an outermost side of the reflective member and an outermost side of the light transmissive member are located in a same vertical plane, and

wherein a portion of the light transmissive member covers at least a part of side surfaces of the transparent substrate.

2. The light emitting device according to claim 1,

wherein each of the electrically conductive members is directly connected to the bottom surface of a respective one of the electrodes.

3. The light emitting device according to claim 1,

wherein each of the electrically conductive members is connected to the bottom surface of a respective one of the electrodes via a respective die bonding member.

4. The light emitting device according to claim 3, wherein the reflective member covers side surfaces of the die bonding members.

5. The light emitting device according to claim 1, wherein the reflective member further covers side surfaces of the semiconductor layer and side surfaces of the electrodes.

6. The light emitting device according to claim 5, wherein an interface between the light transmissive member and the reflective member is located at approximately the same height or higher than an interface between the semiconductor layer and the transparent substrate.

7. The light emitting device according to claim 5,

wherein an insulating protective film is disposed on at least side surfaces of the semiconductor layer and side surfaces of the electrodes, and

wherein the reflective member covers the side surfaces of the semiconductor layer and the side surfaces of the electrodes via the insulating protective film.

8. The light emitting device according to claim 5, wherein the reflective member has a sloped surface that slopes downward and outward from the light emitting element.

9. The light emitting device according to claim 1, wherein the reflective member covers an entirety of a bottom surface of the semiconductor layer that is exposed from the electrodes.

10. The light emitting device according to claim 1, wherein the reflective member covers part of a bottom surface of the semiconductor layer that is exposed from the electrodes, and the light transmissive member covers another part of a bottom surface of the semiconductor layer that is exposed from the electrodes.

11. The light emitting device according to claim 1, wherein the reflective member is formed as a film having a portion that extends laterally along a bottom surface of the light transmissive member, and a portion that extends upward from the laterally extending portion along side surfaces of the electrically conductive members and the electrodes.

12. The light emitting device according to claim 1,

wherein each of the electrically conductive members is connected to the bottom surface of a respective one of the electrodes via a respective die bonding member, and

wherein the reflective member is formed as a film having a portion that extends laterally along a bottom surface of the light transmissive member, and a portion that extends upward from the laterally extending portion along side surfaces of the electrically conductive members, the die bonding members, and the electrodes.

13. The light emitting device according to claim 1, wherein the reflective member has a thickness of 5 μ

m or greater.

14. The light emitting device according to claim 1, wherein a reflectance of the reflective member is 50% or greater to light of an emission wavelength.

15. The light emitting device according to claim 1, wherein the insulating filler comprises a material selected from the group consisting of SiO₂, Al₂O₃ Al(OH)₃, MgCO₃, TiO₂, ZrO₂, ZnO₂, Nb₂O₅, MgO, Mg(OH)₂, SrO, In₂O₃, TaO₂, HfO, SeO, YnO₃, SiN, AlN, AlON, and MgF₂, and mixtures thereof.

16. The light emitting device according to claim 1, wherein the light transmissive member comprises a material selected from the group consisting of a silicone resin, an epoxy resin, and a urea resin.