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Aluminum copper clad material

  • US 9,890,438 B2
  • Filed: 01/08/2016
  • Issued: 02/13/2018
  • Est. Priority Date: 06/08/2010
  • Status: Active Grant
First Claim
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1. A method for producing an aluminum copper clad material in which an aluminum layer and a copper layer are diffusion-bonded via an Al—

  • Cu intermetallic compound layer, the method comprising the steps of;

    preparing an aluminum plate that serves as a source of the aluminum layer and a copper plate that serves as a source of the copper layer, wherein the preparing step includes completely annealing the copper plate and subjecting it to cold rolling to set an average surface hardness which satisfies Hc>

    1.6×

    Hca, wherein Hc (Hv) represents an average surface hardness of a surface of the copper plate to be pressure-welded, and Hca (Hv) represents an average surface hardness of the completely annealed material of the copper plate;

    pressure-welding the aluminum plate and the copper plate that are stacked on each other; and

    diffusion-annealing the resulting pressure-welded material at an annealing temperature T (°

    C.) of about 150°

    C. to about 550°

    C. for an annealing time t (min) in a range satisfying the following expressions;


    tmin≦

    t≦

    tmax
    tmax=−

    1.03×

    T+
    567
    tmin=0.5, when −

    0.19×

    T+
    86<

    0.5,
    tmin=−

    0.19×

    T
    +86, when −

    0.19×

    T
    +86≧

    0.5;

    whereinin the resulting aluminum copper clad material;

    the copper layer satisfies Dcs≦

    0.5×

    Dcc, where Dcc represents an average crystal grain size of crystal grains in a central portion in a thickness direction of the copper layer, and Dcs represents an average crystal grain size of an interface adjacent portion in the copper layer that is about 0.5 μ

    m apart from an interface between the copper layer and the Al—

    Cu intermetallic compound layer; and

    the Al—

    Cu intermetallic compound layer has an average thickness of about 0.5 μ

    m to about 10 μ

    m and includes broken up and dispersed aluminum oxide.

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