Crystal of nitride of group-13 metal on periodic table, and method for producing the same

• US 9,890,474 B2
• Filed: 08/21/2015
• Issued: 02/13/2018
• Est. Priority Date: 02/22/2013
• Status: Active Grant

• Current Assignee: Mitsubishi Chemical Corporation (Mitsubishi Chemical Group Corp.)
• Original Assignee: Mitsubishi Chemical Corporation (Mitsubishi Chemical Group Corp.)
• Inventors: Mikawa, Yutaka, Namita, Hideo, Ikeda, Hirotaka, Kamada, Kazunori, Fujisawa, Hideo, Kojima, Atsuhiko
• Primary Examiner(s): Gregorio, Guinever S
• Application Number:
  US14/832,348
• Publication Number:
  US 20150361587A1
• Time in Patent Office: 907 Days
• Field of Search: None
• CPC Class Codes: C30B 29/406 Gallium nitride
• CPC Class Codes: C30B 7/105 using ammonia as solvent, i.e. ammonothermal processes

Abstract

An object of the present invention is to provide a crystal of a nitride of a Group-13 metal on the Periodic Table which has good crystallinity and has no crystal strain, and to provide a production method for the crystal. The crystal of a nitride of a Group-13 metal on the Periodic Table of the present invention, comprises oxygen atom and hydrogen atom in the crystal and has a ratio of a hydrogen concentration to an oxygen concentration therein of from 0.5 to 4.5.

Claims

1. An ammonothermal GaN crystal, having an XRC half-value width in (100) reflection of 28.2 arcsec or less and an absorption coefficient for a wavelength of 445 nm of 1 cm⁻

1 or less.

2. The ammonothermal GaN crystal according to claim 1, having an XRC half-value width in (102) reflection of less than 28.4 arcsec.

3. The ammonothermal GaN crystal according to claim 1, having a hydrogen concentration of 1×

10¹⁷ atoms/cm³ or more.

4. The ammonothermal GaN crystal according to claim 1, having an oxygen concentration of 1×

10¹⁷ atoms/cm³ or more.

5. The ammonothermal GaN crystal according to claim 4, having an oxygen concentration of 1.0×

10¹⁸ atoms/cm<sup>−

3</sup> or more.

6. The ammonothermal GaN crystal according to claim 4, having dopant contained therein and activated with a carrier activation rate of from 10 to 90%.

7. The ammonothermal GaN crystal according to claim 4, having a transparency increased by annealing.

8. The ammonothermal GaN crystal according to claim 1, having an S-parameter as measured according to a positron annihilation spectroscopy of 0.448 or more.

9. The ammonothermal GaN crystal according to claim 1, having a positron diffusion length of 15 to 50 nm.

10. A substrate, comprising

the ammonothermal GaN crystal according to claim 1.

11. An ammonothermal GaN crystal, having an XRC half-value width in (102) reflection of less than 28.4 arcsec and an absorption coefficient for a wavelength of 445 nm of 1 cm⁻

1 or less.

12. The ammonothermal GaN crystal according to claim 11, having a hydrogen concentration of 1×

10¹⁷ atoms/cm³ or more.

13. The ammonothermal GaN crystal according to claim 11, having an S-parameter as measured according to a positron annihilation spectroscopy of 0.448 or more.

14. The ammonothermal GaN crystal according to claim 11, having a positron diffusion length of 15 to 50 nm.

15. A substrate, comprising

the ammonothermal GaN crystal according to claim 11.

16. The ammonothermal GaN crystal according to claim 11, having an oxygen concentration of 1.0×

10¹⁸ atoms/cm<sup>−

3</sup> or more.

17. The ammonothermal GaN crystal according to claim 11, having dopant contained therein and activated with a carrier activation rate of from 10 to 90%.

18. The ammonothermal GaN crystal according to claim 11, having a transparency increased by annealing.

19. The ammonothermal GaN crystal according to claim 11, having an oxygen concentration of 1×

10¹⁷ atoms/cm<sup>−

3</sup> or more.