Microelectronic packages having split gyroscope structures and methods for the fabrication thereof

• US 9,891,244 B2
• Filed: 08/15/2014
• Issued: 02/13/2018
• Est. Priority Date: 08/15/2014
• Status: Active Grant

• Current Assignee: NXP USA, Inc. (NXP Semiconductors NV)
• Original Assignee: NXP USA, Inc. (NXP Semiconductors NV)
• Inventors: Bowles, Philip H., Hooper, Stephen R.
• Primary Examiner(s): KWOK, HELEN C
• Application Number:
  US14/460,795
• Publication Number:
  US 20170038209A1
• Time in Patent Office: 1,278 Days
• CPC Class Codes: B81B 2201/0235 Accelerometers
• CPC Class Codes: B81B 2201/0242 Gyroscopes
• CPC Class Codes: B81B 2203/0315 Cavities
• CPC Class Codes: B81B 2203/051 Translation according to an axis parallel to the substrate
• CPC Class Codes: B81B 2203/053 Translation according to an axis perpendicular to the substrate
• CPC Class Codes: B81B 7/0074 3D packaging, i.e. encapsulation containing one or several MEMS devices arranged in planes non-parallel to the mounting board
• CPC Class Codes: B81B 7/02 containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS] B81B7/04 takes precedence
• CPC Class Codes: B81C 1/00269 Bonding of solid lids or wafers to the substrate
• CPC Class Codes: B81C 2203/0109 Bonding an individual cap on the substrate
• CPC Class Codes: B81C 2203/0118 Bonding a wafer on the substrate, i.e. where the cap consists of another wafer
• CPC Class Codes: B81C 2203/035 Soldering
• CPC Class Codes: B81C 3/001 Bonding of two components
• CPC Class Codes: G01C 19/5783 Mountings or housings not specific to any of the devices covered by groups G01C19/5607 - G01C19/5719
• CPC Class Codes: G01P 15/0802 Details
• CPC Class Codes: G01P 15/18 in two or more dimensions

Abstract

Methods for fabricating microelectronic packages and microelectronic packages having split gyroscope structures are provided. In one embodiment, the microelectronic package includes a first Microelectromechanical Systems (MEMS) die having a first MEMS gyroscope structure thereon. The microelectronic package further includes a second MEMS die, which has a second MEMS gyroscope structure thereon and which is positioned in a stacked relationship with the first MEMS die. The first and second MEMS gyroscope structures overlap as taken along a first axis orthogonal to a principal axis of the first MEMS die.

Claims

1. A microelectronic package, comprising:

a first Microelectromechanical Systems (MEMS) die having a first MEMS gyroscope structure and a frontside on which the first MEMS gyroscope structure is formed;

a second MEMS die having a second MEMS gyroscope structure thereon and positioned in a stacked relationship with the first MEMS die, the first and second MEMS gyroscope structures overlapping as taken along an axis orthogonal to the frontside of the first MEMS die;

a first hermetic cavity enclosing the first MEMS gyroscope structure;

a second hermetic cavity enclosing the second MEMS gyroscope structure and fluidly coupled to the first hermetic cavity;

a vent hole fluidly coupling the first and second hermetic cavities and formed through the first MEMS die;

a cap piece sealingly bonded to the first MEMS die opposite the second MEMS die; and

a MEMS accelerometer structure formed on the frontside of the first MEMS die at a location adjacent the first MEMS gyroscope structure, the MEMS accelerometer structure further overlapping with the second MEMS gyroscope structure as taken along an axis orthogonal to the frontside of the first MEMS die.

2. The microelectronic package of claim 1 wherein the first and second MEMS gyroscope structures are sensitive along mutually exclusive, orthogonal axes such that the first and second MEMS gyroscope structures collectively provide the functionality of a three axis gyroscope.

3. The microelectronic package of claim 2 wherein the first MEMS gyroscope structure is sensitive along a first sense axis substantially orthogonal to the first MEMS die, and wherein the second gyroscope structure is sensitive along second and third axes orthogonal to the first axis.

4. The microelectronic package of claim 1 wherein a planform surface area of the second MEMS gyroscope structure is greater than a planform surface area of the first MEMS gyroscope structure and greater than a planform surface area of the MEMS accelerometer structure.

5. The microelectronic package of claim 1 wherein the first and second MEMS gyroscope structures are sensitive along at least one common sense axis, and wherein the first MEMS gyroscope structure has sensitivity greater than the sensitivity of the second MEMS gyroscope structure.

6. The microelectronic package of claim 1 wherein the first and second hermetic cavities contain a first pressure, and wherein the microelectronic package further comprises:

a third hermetic cavity enclosing the MEMS accelerometer structure and containing a second pressure greater than the first pressure.

7. The microelectronic package of claim 1 wherein the first MEMS die, the second MEMS die, and the cap piece comprise singulated pieces of a first MEMS wafer, a second MEMS wafer, and a cap piece wafer, respectively.

8. The microelectronic package of claim 1 wherein the first hermetic cavity is defined, at least in substantial part, by the frontside of the first MEMS die and the cap piece;

wherein the second hermetic cavity is defined, at least in substantial part, by a backside of the first MEMS die and a frontside of the second MEMS die; and

wherein the microelectronic package further comprises a third hermetic cavity enclosing the MEMS accelerometer structure and defined, at least in substantial part, by the frontside of the first MEMS die and the cap piece.

9. A microelectronic package, comprising:

a first Microelectromechanical Systems (MEMS) die having a first MEMS gyroscope structure and a frontside on which the first MEMS gyroscope structure is formed;

a second MEMS die having a second MEMS gyroscope structure thereon and positioned in a stacked relationship with the first MEMS die, the first and second MEMS gyroscope structures overlapping as taken along an axis orthogonal to the frontside of the first MEMS die;

a first hermetic cavity enclosing the first MEMS gyroscope structure;

a second hermetic cavity enclosing the second MEMS gyroscope structure and fluidly coupled to the first hermetic cavity;

a cap piece sealingly bonded between the first and second MEMS die;

a vent hole fluidly coupling the first and second hermetic cavities and formed through the cap piece; and

a MEMS accelerometer formed on the frontside of the first MEMS die at a location adjacent the first MEMS gyroscope structure, the MEMS accelerometer further overlapping with the second MEMS gyroscope structure as taken along an axis orthogonal to the frontside of the first MEMS die.

10. The microelectronic package of claim 9 wherein the first hermetic cavity is defined, at least in substantial part, by the frontside of the first MEMS die and the cap piece;

wherein the second hermetic cavity is defined, at least in substantial part, by the cap piece and a frontside of the second MEMS die; and

wherein the microelectronic package further comprises a third hermetic cavity enclosing the MEMS accelerometer structure and defined, at least in substantial part, by the frontside of the first MEMS die and the cap piece.

11. A microelectronic package, comprising:

a first Microelectromechanical Systems (MEMS) die having a first MEMS gyroscope structure and a MEMS accelerometer formed thereon;

a second MEMS die having a second MEMS gyroscope structure thereon and positioned in a stacked relationship with the first MEMS die;

a first hermetic cavity enclosing the first MEMS gyroscope structure and containing a first pressure;

a second hermetic cavity enclosing the second MEMS gyroscope structure, fluidly coupled to the first hermetic cavity, and containing the first pressure; and

a third hermetic cavity enclosing the MEMS accelerometer and containing a second pressure greater than the first pressure.

12. The microelectronic package of claim 11 wherein the microelectronic package has a centerline, wherein the first MEMS gyroscope structure is sensitive along a first axis parallel to the centerline, wherein the second MEMS gyroscope structure sensitive along second and third axes orthogonal to the first axis, and wherein the accelerometer is sensitive along the first, second, and third axes.

13. The microelectronic package of claim 11 further comprising:

a cap piece sealingly bonded to the first MEMS die; and

a vent hole fluidly coupling the first and second hermetic cavities and formed through one of the cap piece and the first MEMS die.

14. The microelectronic package of claim 13 further comprising an application specific integrated circuit formed in the cap piece, exposed to the first pressure, and exposed to the second pressure.

15. The microelectronic package of claim 13 further comprising a recess formed in the cap piece and partially defining the second hermetic cavity, the vent hole extending from the recess to a surface of the cap piece to which the first MEMS die is bonded.

16. The microelectronic package of claim 15 further comprising an application specific integrated circuit formed in the cap piece substantially opposite the recess.

17. The microelectronic package of claim 11 further comprising a recess formed in the first MEMS die and partially defining the second hermetic cavity.

18. The microelectronic package of claim 17 wherein the recess is formed in the first MEMS die substantially opposite the first MEMS gyroscope structure and the MEMS accelerometer, the vent hole extending from the recess to a frontside of the first MEMS die on which the first MEMS gyroscope structure and the MEMS accelerometer are formed.

19. The microelectronic package of claim 11 wherein the second MEMS gyroscope structure overlaps with the first MEMS gyroscope structure and with the MEMS accelerometer, as taken along a centerline of the microelectronic package.