Integrated electro-optic modulator
First Claim
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1. A capacitive modulator comprising:
- a waveguide comprisingan insulating substrate,a single-crystal silicon strip disposed above the insulating substrate, the single-crystal silicon strip being doped with a first conductivity type,a polysilicon strip disposed above the insulating substrate, the polysilicon strip being doped with a second conductivity type opposite the first conductivity type,an interface layer comprising an insulating layer between the single-crystal silicon strip and the polysilicon strip, wherein the single-crystal silicon strip and the polysilicon strip each comprisea first portion directly contacting the interface layer,a second portion thinner than the first portion, anda third portion, wherein the second portion is disposed between the first portion and the third portion, andan electrical contact coupled to the third portion of the single-crystal silicon strip, wherein the first portion and the second portion of the single-crystal silicon strip are doped to a first doping concentration, the third portion of the single-crystal silicon strip is doped to a second doping concentration greater than the first doping concentration, and wherein the first portion of the single-crystal silicon strip and the first portion of the polysilicon strip are of a same first thickness.
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Abstract
An E/O phase modulator may include a waveguide having an insulating substrate, a single-crystal silicon strip and a polysilicon strip of a same thickness and doped with opposite conductivity types above the insulating substrate, and an insulating interface layer between the single-crystal silicon strip and polysilicon strip. Each of the single-crystal silicon strip and polysilicon strip may be laterally continued by a respective extension, and a respective electrical contact coupled to each extension.
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Citations
27 Claims
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1. A capacitive modulator comprising:
a waveguide comprising an insulating substrate, a single-crystal silicon strip disposed above the insulating substrate, the single-crystal silicon strip being doped with a first conductivity type, a polysilicon strip disposed above the insulating substrate, the polysilicon strip being doped with a second conductivity type opposite the first conductivity type, an interface layer comprising an insulating layer between the single-crystal silicon strip and the polysilicon strip, wherein the single-crystal silicon strip and the polysilicon strip each comprise a first portion directly contacting the interface layer, a second portion thinner than the first portion, and a third portion, wherein the second portion is disposed between the first portion and the third portion, and an electrical contact coupled to the third portion of the single-crystal silicon strip, wherein the first portion and the second portion of the single-crystal silicon strip are doped to a first doping concentration, the third portion of the single-crystal silicon strip is doped to a second doping concentration greater than the first doping concentration, and wherein the first portion of the single-crystal silicon strip and the first portion of the polysilicon strip are of a same first thickness. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A capacitive modulator comprising:
a first waveguide coupled to a second waveguide and a third waveguide at a first region of the first waveguide, the second and third waveguides coupled to each other and a fourth waveguide at a second region of the fourth waveguide, the second waveguide comprising an insulating substrate, a single-crystal silicon strip disposed above the insulating substrate, the single-crystal silicon strip being doped with a first conductivity type, a polysilicon strip disposed above the insulating substrate, the polysilicon strip being doped with a second conductivity type opposite the first conductivity type, an interface layer comprising an insulating layer between the single-crystal silicon strip and polysilicon strip, wherein the single-crystal silicon strip and the polysilicon strip each comprise a first portion directly contacting the interface layer, a second portion thinner than the first portion, and a third portion, wherein the second portion is disposed between the first portion and the third portion, and an electrical contact coupled to the third portion of the single-crystal silicon strip, wherein the first portion and the second portion of the single-crystal silicon strip are doped to a first doping concentration, the third portion of the single-crystal silicon strip is doped to a second doping concentration greater than the first doping concentration, wherein the first portion of the single-crystal silicon strip and the first portion of the polysilicon strip are of a same first thickness. - View Dependent Claims (10, 11, 12, 13)
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14. A capacitive modulator comprising:
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a first waveguide comprising an insulating substrate, a single-crystal silicon region disposed above the insulating substrate, the single-crystal silicon region being doped with a first conductivity type, a polysilicon region disposed above the insulating substrate, the polysilicon region being doped with a second conductivity type opposite the first conductivity type, an interface layer comprising an insulating layer between the single-crystal silicon region and the polysilicon region, wherein the single-crystal silicon region and the polysilicon region each comprise a strip having an upper surface at a first height, a lateral extension comprising a first portion and a second portion, the first portion having an upper surface at the first height, wherein the second portion extends from the strip to the first portion, and wherein the second portion of the lateral extension of the strip has an upper surface at a second height less than the first height, and a contact over the first portion, wherein the strip and the second portion of the lateral extension of the single-crystal silicon region are doped to a first doping concentration, and wherein the first portion of the lateral extension of the single-crystal silicon region is doped to a second doping concentration greater than the first doping concentration. - View Dependent Claims (15, 16, 17, 18, 19, 20, 21, 22)
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23. A waveguide comprising:
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an insulating substrate; a single-crystal silicon strip disposed above the insulating substrate, the single-crystal silicon strip being doped with a first conductivity type; a polysilicon strip disposed above the insulating substrate, the polysilicon strip being doped with a second conductivity type opposite the first conductivity type; a semiconductor layer having a semiconductor material different than both the silicon in the single-crystal silicon strip and the polysilicon in the polysilicon strip, the semiconductor layer disposed between a sidewall of the single-crystal silicon strip and a sidewall of the polysilicon strip; and an insulating layer disposed between the semiconductor layer and the sidewall of the polysilicon strip, wherein the semiconductor layer and the polysilicon strip are capacitively coupled through the insulating layer. - View Dependent Claims (24, 25, 26, 27)
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Specification