Method for depositing thin film

• US 9,891,521 B2
• Filed: 10/19/2015
• Issued: 02/13/2018
• Est. Priority Date: 11/19/2014
• Status: Active Grant

• Current Assignee: ASM IP Holding B.V. (ASM International NV)
• Original Assignee: ASM IP Holding B.V. (ASM International NV)
• Inventors: Kang, DongSeok
• Primary Examiner(s): BOOTH, RICHARD A
• Application Number:
  US14/886,571
• Publication Number:
  US 20160141172A1
• Time in Patent Office: 848 Days
• CPC Class Codes: G03F 7/00 Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor using photoresist structures for special production processes, see the relevant places, e.g. B44C, H01L, e.g. H01L21/00, H05K
• CPC Class Codes: G03F 7/40 Treatment after imagewise removal, e.g. baking
• CPC Class Codes: H01L 21/02164 the material being a silicon oxide, e.g. SiO2
• CPC Class Codes: H01L 21/0273 characterised by the treatment of photoresist layers
• CPC Class Codes: H01L 21/0332 characterised by their composition, e.g. multilayer masks, materials

Abstract

Disclosed herein is a method of depositing a thin film. An exemplary embodiment of the present invention provides a method of depositing a thin film, including: a step of forming a protective layer containing silicon on a substrate; and a step of forming a sacrificial layer on the protective layer, wherein the protective layer and the sacrificial layer may include silicon (Si), and the step of forming the protective layer may include a step of supplying a precursor containing silicon and a step of supplying plasma activating a purge gas.

Claims

1. A method of depositing a thin film, comprising:

a step of forming a protective layer containing silicon on a substrate comprising photoresist, wherein the protective layer is formed on the photoresist; and

a step of forming a sacrificial layer on the protective layer,

wherein the protective layer and the sacrificial layer include silicon (Si), and

the step of forming the protective layer includes a step of supplying a precursor containing silicon and a step of supplying plasma activating a purge gas,

wherein the first step and the second step of forming the protective layer are cyclically repeated.

2. The method of depositing a thin film of claim 1, wherein the step of forming the protective layer includes:

a step of supplying a purge gas during a first time t1, a second time t2, a third time t3, and a fourth time t4;

a step of supplying a first precursor during the first time t1; and

a step of supplying a first plasma during the third time t3.

3. The method of depositing a thin film of claim 2, wherein the step of forming the sacrificial layer includes:

a step of supplying the purge gas during a fifth time t5, a sixth time t6, a seventh time t7, and an eighth time t8;

a step of supplying the second precursor during the fifth time t5;

a step of supplying a reaction gas during the fifth time t5 to the eighth time t8; and

a step of supplying a second plasma during the seventh time t7.

4. The method of depositing a thin film of claim 3, wherein the first precursor and the second precursor are the same or different.

5. The method of depositing a thin film of claim 4, wherein the first precursor and the second precursor each include at least one of alkoxide-based, amine-based, aminosilane-based, and chloride-based precursors that respectively contain silicon (Si).

6. The method of depositing a thin film of claim 5, wherein the first precursor and the second precursor each include at least one of TSA, (SiH₃)₃N;

DSO, (SiH₃)₂;

DSMA, (SiH₃)₂NMe;

DSEA, (SiH₃)₂NEt;

DSIPA, (SiH₃)₂N(iPr);

DSTBA, (SiH₃)₂N(tBu);

DEAS, SiH₃NEt₂;

DIPAS, SiH₃N(iPr)₂;

DTBAS, SiH₃N(tBu)₂;

BDEAS, SiH₂ (NEt₂)₂;

BDMAS, SiH₂ (NMe₂)₂;

BTBAS, SiH₂(NHtBu)₂;

BITS, SiH₂(NHSiMe₃)₂;

TEOS, Si(OEt)₄;

SiCl₄;

HCD, Si₂Cl₆;

DCS, SiH₂Cl₂;

3DMAS, SiH(N(Me)₂)₃;

BEMAS, Si H₂[N(Et)(Me)]₂;

AHEAD, Si₂ (NHEt)₆;

TEAS, Si(NHEt)₄; and

Si₃H₈, and the reaction gas may include at least one of oxygen (O₂), ozone (O₃), nitrous oxide (N₂O), and nitrogen monoxide (NO).

7. The method of depositing a thin film of claim 1, wherein the step of forming the protective layer includes:

a step of supplying the purge gas during the first time t1, the second time t2, the third time t3, and the fourth time t4;

a step of supplying the first precursor during the first time t1, the second time t2, the third time t3, and the fourth time t4; and

a step of supplying the first plasma during the third time t3.

8. The method of depositing a thin film of claim 7, wherein the step of the sacrificial layer includes:

a step of supplying the purge gas during the fifth time t5, the sixth time t6, the seventh time t7, and the eighth time t8;

a step of supplying the second precursor during the fifth time t5;

a step of supplying the reaction gas during the fifth time t5 to the eighth time t8; and

a step of supplying a second plasma during the seventh time t7.

9. The method of depositing a thin film of claim 8, wherein the first precursor and the second precursor are the same or different.

10. The method of depositing a thin film of claim 9, wherein the first precursor and the second precursor each include at least one of alkoxide-based, amine-based, aminosilane-based, and chloride-based precursors that respectively contain silicon (Si).

11. The method of depositing a thin film of claim 10, wherein the first precursor and the second precursor each include at least one of TSA, (SiH₃)₃N;

DSO, (SiH₃)₂;

DSMA, (SiH₃)₂NMe;

DSEA, (SiH₃)₂NEt;

DSIPA, (SiH₃)₂N(iPr);

DSTBA, (SiH₃)₂N(tBu);

DEAS, SiH₃NEt₂;

DIPAS, SiH₃N(iPr)₂;

DTBAS, SiH₃N(tBu)₂;

BDEAS, SiH₂ (NEt₂)₂;

BDMAS, SiH₂ (NMe₂)₂;

BTBAS, SiH₂(NHtBu)₂;

BITS, SiH₂(NHSiMe₃)₂;

TEOS, Si(OEt)₄;

SiCl₄;

HCD, Si₂Cl₆, DCS, SiH₂Cl₂;

3DMAS, SiH(N(Me)₂)₃;

BEMAS, Si H₂[N(Et)(Me)]₂;

AHEAD, Si₂ (NHEt)₆;

TEAS, Si(NHEt)₄; and

Si₃H₈, and the reaction gas may include at least one of oxygen (O₂), ozone (O₃), nitrous oxide (N₂O), and nitrogen monoxide (NO).

12. The method of depositing a thin film of claim 1, wherein the step of forming the protective layer includes:

a step of supplying the first precursor during the first time t1; and

a step of supplying the first plasma during the third time t3.

13. The method of depositing a thin film of claim 12, wherein the step of forming the protective layer includes a step of stopping supply of the gas during the second time t2 between the first time t1 and the third time t3, and during the fourth time t4 after the third time t3, before forming a sacrificial layer.

14. The method of depositing a thin film of claim 12, wherein the step of the sacrificial layer includes:

a step of supplying the purge gas during the fifth time t5, the sixth time t6, the seventh time t7, and the eighth time t8;

a step of supplying the second precursor during the fifth time t5;

a step of supplying the reaction gas during the fifth time t5 to the eighth time t8; and

a step of supplying a second plasma during the seventh time t7.

15. The method of depositing a thin film of claim 14, wherein the first precursor and the second precursor are the same or different.

16. The method of depositing a thin film of claim 15, wherein the first precursor and the second precursor each include at least one of alkoxide-based, amine-based, aminosilane-based, and chloride-based precursors that respectively contain silicon (Si).

17. The method of depositing a thin film of claim 16, wherein the first precursor and the second precursor each include at least one of TSA, (SiH₃)₃N;

DSO, (SiH₃)₂;

DSMA, (SiH₃)₂NMe;

DSEA, (SiH₃)₂NEt;

DSIPA, (SiH₃)₂N(iPr);

DSTBA, (SiH₃)₂N(tBu);

DEAS, SiH₃NEt₂;

DIPAS, SiH₃N(iPr)₂;

DTBAS, SiH₃N(tBu)₂;

BDEAS, SiH₂ (NEt₂)₂;

BDMAS, SiH₂ (NMe₂)₂;

BTBAS, SiH₂(NHtBu)₂;

BITS, SiH₂(NHSiMe₃)₂;

TEOS, Si(OEt)₄;

SiCl₄;

HCD, Si₂Cl₆, DCS, SiH₂Cl₂;

3DMAS, SiH(N(Me)₂)₃;

BEMAS, Si H₂[N(Et)(Me)]₂;

AHEAD, Si₂ (NHEt)₆;

TEAS, Si(NHEt)₄; and

Si₃H₈, and the reaction gas may include at least one of oxygen (O₂), ozone (O₃), nitrous oxide (N₂O), and nitrogen monoxide (NO).