Method for depositing thin film
First Claim
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1. A method of depositing a thin film, comprising:
- a step of forming a protective layer containing silicon on a substrate comprising photoresist, wherein the protective layer is formed on the photoresist; and
a step of forming a sacrificial layer on the protective layer,wherein the protective layer and the sacrificial layer include silicon (Si), andthe step of forming the protective layer includes a step of supplying a precursor containing silicon and a step of supplying plasma activating a purge gas,wherein the first step and the second step of forming the protective layer are cyclically repeated.
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Abstract
Disclosed herein is a method of depositing a thin film. An exemplary embodiment of the present invention provides a method of depositing a thin film, including: a step of forming a protective layer containing silicon on a substrate; and a step of forming a sacrificial layer on the protective layer, wherein the protective layer and the sacrificial layer may include silicon (Si), and the step of forming the protective layer may include a step of supplying a precursor containing silicon and a step of supplying plasma activating a purge gas.
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Citations
17 Claims
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1. A method of depositing a thin film, comprising:
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a step of forming a protective layer containing silicon on a substrate comprising photoresist, wherein the protective layer is formed on the photoresist; and a step of forming a sacrificial layer on the protective layer, wherein the protective layer and the sacrificial layer include silicon (Si), and the step of forming the protective layer includes a step of supplying a precursor containing silicon and a step of supplying plasma activating a purge gas, wherein the first step and the second step of forming the protective layer are cyclically repeated. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17)
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Specification