Semiconductor device

• US 9,893,020 B2
• Filed: 08/03/2016
• Issued: 02/13/2018
• Est. Priority Date: 09/09/2015
• Status: Active Grant

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Samsung Electronics Co. Ltd.
• Inventors: Lee, Baik-Woo, Song, Eun-Seok, Kim, Young-Jae, Jang, Jae-Gwon
• Primary Examiner(s): Le, Thao P
• Application Number:
  US15/227,953
• Publication Number:
  US 20170069828A1
• Time in Patent Office: 559 Days
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48228 the bond pad being disposed in a recess of the surface of the item
• CPC Class Codes: H01L 2224/73265 Layer and wire connectors
• CPC Class Codes: H01L 23/552 Protection against radiation, e.g. light or electromagnetic waves
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details

Abstract

In one embodiment, a semiconductor device comprising, a substrate comprising a wiring layer, a first conductive shielding layer disposed on the substrate and electrically isolated from the wiring layer, the first conductive shielding layer comprising a first bonding surface and a first end surface extending from the first bonding surface, a semiconductor chip disposed on the first conductive shielding layer, a molding member disposed over the first conductive shielding layer to cover the semiconductor chip, a second conductive shielding layer disposed over the first conductive shielding layer and the molding member, the second conductive shielding layer comprising a second bonding surface and a second end surface extending from the second bonding surface, and a bonding portion disposed between the first and second bonding surfaces, the bonding portion comprising a top surface and a bottom surface opposite to the top surface. The bottom surface of the bonding portion contacts the first bonding surface to form a first contact surface. The top surface of the bonding portion contacts the second bonding surface to form a second contact surface. An area of the second contact surface is larger than an area of the second end surface.

Claims

1. A semiconductor device comprising:

a substrate comprising a wiring layer;

a first conductive shielding layer disposed on the substrate and electrically insulated from the wiring layer, the first conductive shielding layer comprising a first bonding surface and a first end surface extending from the first bonding surface;

a semiconductor chip disposed on the first conductive shielding layer;

a molding member disposed over the first conductive shielding layer to cover the semiconductor chip;

a second conductive shielding layer disposed over the first conductive shielding layer and the molding member, the second conductive shielding layer comprising a second bonding surface and a second end surface extending from the second bonding surface; and

a bonding portion disposed between the first and second bonding surfaces, the bonding portion comprising a top surface and a bottom surface opposite to the top surface,

wherein the bottom surface of the bonding portion contacts the first bonding surface to form a first contact surface,

wherein the top surface of the bonding portion contacts the second bonding surface to form a second contact surface, and

wherein an area of the second contact surface is larger than an area of the second end surface.

2. The semiconductor device of claim 1, wherein the first contact surface faces the second contact surface.

3. The semiconductor device of claim 2, wherein an area of the first contact surface is equal to the area of the second contact surface.

4. The semiconductor device of claim 3, wherein an area of the first bonding surface is equal to the area of the first contact surface.

5. The semiconductor device of claim 1, wherein an area of the first contact surface is larger than an area of the first end surface.

6. The semiconductor device of claim 1, wherein the first conductive shielding layer comprises a side portion extending along a side surface of the molding member.

7. The semiconductor device of claim 1, wherein the first conductive shielding layer, the second conductive shielding layer and the bonding portion formed a sealed space above the substrate.

8. The semiconductor device of claim 1, wherein the second conductive shielding layer extends along a side surface of the molding member.

9. The semiconductor device of claim 1, wherein the bonding portion contains at least one organic resin chosen from an epoxy resin, an acrylic resin, a polyester resin and a polycarbonate.

10. The semiconductor device of claim 9, wherein the bonding portion comprises a filler containing nickel (Ni).