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Semiconductor device

  • US 9,893,020 B2
  • Filed: 08/03/2016
  • Issued: 02/13/2018
  • Est. Priority Date: 09/09/2015
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • a substrate comprising a wiring layer;

    a first conductive shielding layer disposed on the substrate and electrically insulated from the wiring layer, the first conductive shielding layer comprising a first bonding surface and a first end surface extending from the first bonding surface;

    a semiconductor chip disposed on the first conductive shielding layer;

    a molding member disposed over the first conductive shielding layer to cover the semiconductor chip;

    a second conductive shielding layer disposed over the first conductive shielding layer and the molding member, the second conductive shielding layer comprising a second bonding surface and a second end surface extending from the second bonding surface; and

    a bonding portion disposed between the first and second bonding surfaces, the bonding portion comprising a top surface and a bottom surface opposite to the top surface,wherein the bottom surface of the bonding portion contacts the first bonding surface to form a first contact surface,wherein the top surface of the bonding portion contacts the second bonding surface to form a second contact surface, andwherein an area of the second contact surface is larger than an area of the second end surface.

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