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Semiconductor device and method of manufacturing the same

  • US 9,893,153 B2
  • Filed: 07/30/2015
  • Issued: 02/13/2018
  • Est. Priority Date: 09/19/2014
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • a SiC layer;

    a gate electrode;

    a gate insulating film provided between the SiC layer and the gate electrode;

    a first region provided between the SiC layer and the gate insulating film, the first region containing at least one element selected from the group consisting of N (nitrogen), P (phosphorus), As (arsenic), Sb (antimony), Sc (scandium), Y (yttrium), La (lanthanum), lanthanoids (Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu), H (hydrogen), D (deuterium), and F (fluorine); and

    a second region being an uppermost part of the SiC layer, being not thermally oxidized SiC, and being provided adjacent to the first region, an oxygen concentration in the second region being higher than a concentration of the at least one element in the second region.

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