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Fin-type field effect transistor device and method of fabricating the same

  • US 9,893,184 B2
  • Filed: 12/15/2015
  • Issued: 02/13/2018
  • Est. Priority Date: 12/15/2015
  • Status: Active Grant
First Claim
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1. A method of fabricating a Fin-FET device, comprising:

  • forming a gate stack on a fin of a substrate;

    forming a source and drain region beside the gate stack;

    forming a preliminary dielectric layer on the substrate over the gate stack and the source and drain region, and the preliminary dielectric layer partially exposing the gate stack, wherein the forming of the preliminary dielectric layer comprises forming a dielectric material layer continuously covering the gate stack and the source and drain region, and patterning the dielectric material layer into the preliminary dielectric layer comprising a first dielectric portion over the source and drain region and a second dielectric portion over the gate stack;

    forming an insulation layer to continuously cover the preliminary dielectric layer and an exposed portion of the gate stack;

    partially removing the insulation layer and the preliminary dielectric layer until exposing the source and drain region and remaining a portion of the insulation layer and a portion of the preliminary dielectric layer at a sidewall of the gate stack to serve as a sidewall insulator on the source and drain region; and

    forming a metal connector on the source and drain region and the metal connector being isolated from the gate stack by the sidewall insulator.

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