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Sacrificial non-epitaxial gate stressors

  • US 9,893,187 B2
  • Filed: 11/02/2016
  • Issued: 02/13/2018
  • Est. Priority Date: 05/24/2016
  • Status: Expired due to Fees
First Claim
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1. A method for fabricating a strained channel for a fin field effect transistor (finFET) device having a fin comprising the channel, the method comprising:

  • forming, on the fin, a dummy gate to create strain in the channel, a portion of the dummy gate being under a stress of at least 200 megapascals (MPa);

    forming a first source drain recess at a first end of the fin;

    forming a second source drain recess at a second end of the fin;

    forming a first source drain within the first source drain recess;

    forming a second source drain within the second source drain recess; and

    removing the dummy gate.

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