Oxide semiconductor film and semiconductor device
First Claim
1. An oxide semiconductor film comprising:
- a crystalline region in an upper portion of the oxide semiconductor film, the crystalline region comprising a crystal,wherein the crystalline region is represented by In1+δ
Ga1−
δ
O3(ZnO)m,wherein 0<
δ
<
1 and m=1 to 3 are satisfied, andwherein a composition ratio of the crystalline region is different from a composition ratio of the oxide semiconductor film.
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Abstract
To provide an oxide semiconductor film having stable electric conductivity and a highly reliable semiconductor device having stable electric characteristics by using the oxide semiconductor film. The oxide semiconductor film contains indium (In), gallium (Ga), and zinc (Zn) and includes a c-axis-aligned crystalline region aligned in the direction parallel to a normal vector of a surface where the oxide semiconductor film is formed. Further, the composition of the c-axis-aligned crystalline region is represented by In1+δGa1−δO3(ZnO)m (0<δ<1 and m=1 to 3 are satisfied), and the composition of the entire oxide semiconductor film including the c-axis-aligned crystalline region is represented by InxGayO3(ZnO)m (0<x<2, 0<y<2, and m=1 to 3 are satisfied).
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Citations
13 Claims
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1. An oxide semiconductor film comprising:
-
a crystalline region in an upper portion of the oxide semiconductor film, the crystalline region comprising a crystal, wherein the crystalline region is represented by In1+δ
Ga1−
δ
O3(ZnO)m,wherein 0<
δ
<
1 and m=1 to 3 are satisfied, andwherein a composition ratio of the crystalline region is different from a composition ratio of the oxide semiconductor film. - View Dependent Claims (2, 3, 4, 5)
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6. A semiconductor device comprising:
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a gate electrode; a first insulating film over the gate electrode; an oxide semiconductor film over the first insulating film; and a second insulating film over the oxide semiconductor film, wherein the oxide semiconductor film comprises a crystalline region in an upper portion of the oxide semiconductor film, wherein the crystalline region is represented by In1+δ
Ga1−
δ
O3(ZnO)m,wherein 0<
δ
<
1 and m=1 to 3 are satisfied, andwherein a composition ratio of the crystalline region is different from a composition ratio of the oxide semiconductor film. - View Dependent Claims (7, 8, 9)
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10. A semiconductor device comprising:
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a first insulating film; an oxide semiconductor film over the first insulating film; a second insulating film over the oxide semiconductor film; and a gate electrode over the second insulating film, wherein the oxide semiconductor film comprises a crystalline region in an upper portion of the oxide semiconductor film, wherein the crystalline region is represented by In1+δ
Ga1−
δ
O3(ZnO)m,wherein 0<
δ
<
1 and m=1 to 3 are satisfied, andwherein a composition ratio of the crystalline region is different from a composition ratio of the oxide semiconductor film. - View Dependent Claims (11, 12, 13)
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Specification