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Oxide semiconductor film and semiconductor device

  • US 9,893,201 B2
  • Filed: 06/30/2016
  • Issued: 02/13/2018
  • Est. Priority Date: 04/13/2011
  • Status: Active Grant
First Claim
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1. An oxide semiconductor film comprising:

  • a crystalline region in an upper portion of the oxide semiconductor film, the crystalline region comprising a crystal,wherein the crystalline region is represented by In1+δ

    Ga1−

    δ

    O3(ZnO)m,wherein 0<

    δ

    <

    1 and m=1 to 3 are satisfied, andwherein a composition ratio of the crystalline region is different from a composition ratio of the oxide semiconductor film.

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