Method of manufacturing light emitting device
First Claim
1. A method of manufacturing a light emitting device, comprising:
- providing a light emitting element that includes;
a semiconductor structure in which an n-type semiconductor layer, an active layer, and a p-type semiconductor layer, each containing a nitride semiconductor, are layered in this order,a p-electrode disposed on a portion of a surface of the p-type semiconductor layer on a side opposite to a surface provided with the active layer, andan n-electrode disposed on a surface of the n-type semiconductor layer on a side opposite to a surface provided with the active layer in a region other than a region facing the p-electrode,wherein the light emitting element has a peak wavelength of 410 nm or less; and
forming a protective film on a surface of the light emitting element, wherein the step of forming the protective film includes;
(i) providing a first quantity of oxygen at the surface of the light emitting element, using a first quantity of oxygen raw material gas,(ii) combining a first quantity of a first metal with the first quantity of oxygen provided at the surface of the light emitting element, using a first quantity of a first metal raw material gas,(iii) combining a second quantity of oxygen with the first quantity of the first metal combined with the first quantity of oxygen, using a second quantity of oxygen raw material gas,(iv) combining a first quantity of a second metal, different from the first metal, with the second quantity of oxygen combined with the first quantity of the first metal, using a second metal raw material gas, and(v) combining a third quantity of oxygen with the first quantity of the second metal, using a third quantity of oxygen raw material gas,wherein the protective film is formed so as to continuously cover a surface of the n-electrode and a surface of the n-type semiconductor layer.
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Accused Products
Abstract
A method of manufacturing a light emitting device includes providing a light emitting element; and forming a protective film on a surface of the light emitting element, wherein the step of forming the protective film includes: (i) providing first quantity of oxygen at the surface of the light emitting element, (ii) combining a first quantity of a first metal with the first quantity of oxygen, (iii) combining a second quantity of oxygen with the first quantity of metal, (iv) combining a first quantity of a second metal, different from the first metal, with the second quantity of oxygen and first quantity of the first metal, and (v) combining a third quantity of oxygen with the first quantity of the second metal.
12 Citations
13 Claims
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1. A method of manufacturing a light emitting device, comprising:
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providing a light emitting element that includes; a semiconductor structure in which an n-type semiconductor layer, an active layer, and a p-type semiconductor layer, each containing a nitride semiconductor, are layered in this order, a p-electrode disposed on a portion of a surface of the p-type semiconductor layer on a side opposite to a surface provided with the active layer, and an n-electrode disposed on a surface of the n-type semiconductor layer on a side opposite to a surface provided with the active layer in a region other than a region facing the p-electrode, wherein the light emitting element has a peak wavelength of 410 nm or less; and forming a protective film on a surface of the light emitting element, wherein the step of forming the protective film includes; (i) providing a first quantity of oxygen at the surface of the light emitting element, using a first quantity of oxygen raw material gas, (ii) combining a first quantity of a first metal with the first quantity of oxygen provided at the surface of the light emitting element, using a first quantity of a first metal raw material gas, (iii) combining a second quantity of oxygen with the first quantity of the first metal combined with the first quantity of oxygen, using a second quantity of oxygen raw material gas, (iv) combining a first quantity of a second metal, different from the first metal, with the second quantity of oxygen combined with the first quantity of the first metal, using a second metal raw material gas, and (v) combining a third quantity of oxygen with the first quantity of the second metal, using a third quantity of oxygen raw material gas, wherein the protective film is formed so as to continuously cover a surface of the n-electrode and a surface of the n-type semiconductor layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
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Specification