Electromagnetic wave sensor and/or emitter

• US 9,893,423 B2
• Filed: 11/05/2014
• Issued: 02/13/2018
• Est. Priority Date: 11/13/2013
• Status: Active Grant

• Current Assignee: Canon Ayutthaya Limited (Canon Inc.)
• Original Assignee: Canon Ayutthaya Limited (Canon Inc.)
• Inventors: Debray, Alexis
• Primary Examiner(s): NGUYEN, HOAI AN D
• Application Number:
  US14/534,030
• Publication Number:
  US 20150130481A1
• Time in Patent Office: 1,196 Days
• Field of Search: 324600, 324629, 324637, 343728, 343732, 343741, 343748, 343764, 343788, 343842, 343853, 343855, 343866
• CPC Class Codes: G01N 22/00 Investigating or analysing materials by the use of microwaves or radio waves, i.e. electromagnetic waves with a wavelength of one millimetre or more G01N3/00 - G01N17/00, G01N24/00 take precedence
• CPC Class Codes: G01R 27/00 Arrangements for measuring resistance, reactance, impedance, or electric characteristics derived therefrom
• CPC Class Codes: G01R 27/06 Measuring reflection coefficients; Measuring standing-wave ratio
• CPC Class Codes: G01S 13/0209 Systems with very large relative bandwidth, i.e. larger than 10 %, e.g. baseband, pulse, carrier-free, ultrawideband
• CPC Class Codes: G01S 13/89 for mapping or imaging
• CPC Class Codes: H01Q 1/248 provided with an AC/DC converting device, e.g. rectennas
• CPC Class Codes: H01Q 5/40 Imbricated or interleaved structures; Combined or electromagnetically coupled arrangements, e.g. comprising two or more non-connected fed radiating elements
• CPC Class Codes: H01Q 7/00 Loop antennas with a substantially uniform current distribution around the loop and having a directional radiation pattern in a plane perpendicular to the plane of the loop

Abstract

Provided is a device for performing at least one of detection and emission of electromagnetic waves, including a plurality of antennas, in which a first antenna includes a first radiating element and a first electronic element electrically connected to the first radiating element, and is sensitive to a first frequency band, and in which a second antenna includes a second radiating element and a second electronic element electrically connected to the second radiating element, and is sensitive to a second frequency band. At least a part of the second radiating element is arranged inside the first radiating element.

Claims

1. A sensor for detecting terahertz waves, comprising:

a semiconductor substrate;

a firing wiring loop;

a first rectifier electrically connected to the first wiring loop;

a second wiring loop; and

a second rectifier electrically connected to the second wiring loop, wherein

the first wiring loop surrounds at least a part of the second wiring loop,

wherein the first wiring loop, the first rectifier, the second wiring loop and the second rectifier are arranged on same surface side of the semiconductor substrate, and

wherein the first wiring loop and the second wiring loop have different shapes from each other, and are sensitive to terahertz waves with different polarization directions from each other.

2. The device according to claim 1, wherein a recess is provided at the surface of the substrate,

wherein the first wiring loop is arranged above the recess, and

wherein the second wiring loop is arranged above the recess.

3. A device according to claim 2, wherein the recess is filled with a material.

4. A device according to claim 2, further comprising a support portion that protrudes to the recess and is configured to support at least one of the first electronic element or the second electronic element.

5. A device according to claim 4, wherein the support portion for the second electronic element crosses the first antenna in a position of the first radiating element at which a current is minimum.

6. The sensor according to claim 2, wherein the recess is covered with the metal coating.

7. The device according to claim 1, wherein-the second rectifier is placed inside the first wiring loop.

8. The sensor according to claim 1, wherein

the first rectifier is a first Schottky barrier diode,

the second rectifier is a second Schottky barrier diode,

the first wiring loop has a first end portion and a second end portion, the first Schottky barrier diode is positioned between the first end portion and the second end portion, and

the second wiring loop has a third end portion and a fourth end portion, and the second Schottky barrier diode is positioned between the third end portion and a fourth end portion.

9. The sensor according to claim 1, further comprising:

a metal coating arranged between a surface opposite the surface of the substrate and the first and second wiring loops.

10. The device according to claim 1, wherein a first plane on which the first wiring loop is placed and a second plane on which the second wiring loop is placed are parallel to each other, and

wherein the first plane and the second plane are separated by a distance of 1/10 of less of a wavelength corresponding to a minimum working frequency.

11. The device according to claim 1, wherein the first wiring loop is sensitive to a first frequency band of interest,

wherein the second wiring loop is sensitive to a second frequency band of interest, and

wherein the first frequency and the second frequency are same to each other.

12. The device according to claim 1, wherein the first wiring loop and the second wiring loop are arranged on the same plane.

13. The device according to claim 1, wherein the first wiring loop and the second wiring loop are configured to receive linearly polarized light beams that are different in polarization direction from each other.

14. A emitter for emitting terahertz waves, comprising:

a semiconductor substrate;

a first wiring loop;

a first oscillator electrically connected to the first wiring loop;

a second wiring loop; and

a second oscillator electrically connected to the second wiring loop;

wherein

the first wiring loop surrounds at least a part of the second wiring loop,

wherein the first wiring loop, the first oscillator, the second wiring loop and the second oscillator are arranged on same side surface of the semiconductor substrate, and

wherein the first wiring loop and the second wiring loop have different shapes from each other, and are sensitive to terahertz waves with different polarization directions from each other.

15. The emitter according to claim 14, wherein

the first wiring loop has a first end portion and a second end portion, the first oscillator is positioned between the first end portion and the second end portion,

the second wiring loop have a third end portion and a fourth end portion, and the second oscillator is positioned between the third end portion and fourth and portion.

16. A sensor for detecting terahertz waves, comprising:

a semiconductor substrate;

a first wiring loop;

a first rectifier electrically connected to the first wiring loop;

a second wiring loop; and

a second rectifier electrically connected to the second wiring loop, wherein the first wiring loop surrounds at least a part of the second wiring loop,

wherein the first wiring loop, the first rectifier, the second wiring loop and the second rectifier are arranged on same surface side of the semiconductor substrate, and

wherein the second wiring loop crosses the first wiring loop at a position at which a current is minimum.

17. The sensor according to claim 16, wherein the first wiring loop is different in length from the second wiring loop.

18. The device according to claim 16, wherein the first wiring loop and the second wiring loop are electrically disconnected from each other.

19. An apparatus, comprising a plurality of devices for performing detection of terahertz waves including a first devices and a second devices sensing terahertz waves,

the first devices and the second devices each comprising;

a semiconductor substrate;

a first wiring loop;

a first rectifier electrically connected to the first wiring loop;

a second wiring loop; and

a second rectifier electrically connected to the second wiring loop, wherein

the first wiring loop surrounds at least a part of the second wiring loop,

wherein the first wiring loop, the first rectifier, the second wiring loop and the second rectifier are arranged on same surface side of the semiconductor substrate,

wherein, in the first devices sensing terahertz waves, an antenna that is sensitive to a higher frequency is sensitive to first polarization and an antenna that is sensitive to a lower frequency is sensitive to second polarization, and

wherein, in the second devices sensing terahertz waves, an antenna that is sensitive to the lower frequency is sensitive to the first polarization, and an antenna that is sensitive to the higher frequency is sensitive to the second polarization.