Light emitting element and method of manufacturing the same

• US 9,893,492 B2
• Filed: 06/28/2016
• Issued: 02/13/2018
• Est. Priority Date: 08/09/2013
• Status: Active Grant

• Current Assignee: Sony Corporation (Sony Group Corp.)
• Original Assignee: Sony Corporation (Sony Group Corp.)
• Inventors: Hamaguchi, Tatsushi, Kuramoto, Masaru, Maeda, Yuki, Futagawa, Noriyuki
• Primary Examiner(s): CARTER, MICHAEL W
• Application Number:
  US15/194,933
• Publication Number:
  US 20160308332A1
• Time in Patent Office: 595 Days
• CPC Class Codes: H01S 2304/12 Pendeo epitaxial lateral overgrowth [ELOG], e.g. for growing GaN based blue laser diodes
• CPC Class Codes: H01S 5/0215 Bonding to the substrate
• CPC Class Codes: H01S 5/0216 using an intermediate compound, e.g. a glue or solder
• CPC Class Codes: H01S 5/0217 Removal of the substrate
• CPC Class Codes: H01S 5/183 having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
• CPC Class Codes: H01S 5/18311 using selective oxidation
• CPC Class Codes: H01S 5/18341 Intra-cavity contacts
• CPC Class Codes: H01S 5/18361 Structure of the reflectors, e.g. hybrid mirrors
• CPC Class Codes: H01S 5/18369 based on dielectric materials
• CPC Class Codes: H01S 5/18388 Lenses
• CPC Class Codes: H01S 5/18391 Aperiodic structuring to influence the near- or far-field distribution
• CPC Class Codes: H01S 5/3013 AIIIBV compounds
• CPC Class Codes: H01S 5/34333 with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser

Abstract

A method of manufacturing a light emitting element includes, sequentially (a) forming a first light reflecting layer having a convex shape; (b) forming a layered structure body by layering a first compound semiconductor layer, an active layer, and a second compound semiconductor layer; (c) forming, on the second surface of the second compound semiconductor layer, a second electrode and a second light reflecting layer formed from a multilayer film; (d) fixing the second light reflecting layer to a support substrate; (e) removing the substrate for manufacturing a light emitting element, and exposing the first surface of the first compound semiconductor layer and the first light reflecting layer; (f) etching the first surface of the first compound semiconductor layer; and (g) forming a first electrode on at least the etched first surface of the first compound semiconductor layer.

Claims

1. A method of manufacturing a light emitting element comprising:

forming a convexity formed from a material different from a material that configures a first compound semiconductor layer on a substrate for manufacturing a light emitting element;

forming a layered structure body by layering the first compound semiconductor layer formed from a GaN-based compound semiconductor, which has a first surface and a second surface opposing the first surface, an active layer formed from a GaN-based compound semiconductor, which contacts the second surface of the first compound semiconductor layer, and a second compound semiconductor layer formed from a GaN-based compound semiconductor, which has a first surface and a second surface opposing the first surface, and in which the first surface contacts the active layer on the substrate for manufacturing a light emitting element that includes the convexity;

forming, on the second surface of the second compound semiconductor layer, a second electrode and a second light reflecting layer formed from a multilayer film;

fixing the second light reflecting layer to a support substrate;

removing the substrate for manufacturing a light emitting element, and exposing the first surface of the first compound semiconductor layer and the convexity; and

removing the convexity, forming a first light reflecting layer formed from a multilayer film on at least a part of the first surface on the first compound semiconductor layer from which the convexity is removed, and forming a first electrode on at least a part of the first surface of the first compound semiconductor layer on which the first electrode is to be formed.

2. The method of manufacturing a light emitting element according to claim 1, wherein exposure of the first surface of the first compound semiconductor layer and the convexity is performed based on a chemical/mechanical polishing method.

3. The method of manufacturing a light emitting element according to claim 1, wherein a part of the first surface of the first compound semiconductor layer on which the first electrode is to be formed is etched before the first electrode is formed on the first surface of the first compound semiconductor layer.

4. The method of manufacturing a light emitting element according to claim 3, wherein the part of the first surface of the first compound semiconductor layer on which the first electrode is to be formed is etched based on a reactive ion etching method.

5. The method of manufacturing a light emitting element according to claim 1, wherein the convexity includes a top surface smaller than a bottom surface.

6. The method of manufacturing a light emitting element according to claim 1, wherein an area centroid of the second light reflecting layer is not present on a normal line with respect to the first light reflecting layer that passes through the area centroid of the first light reflecting layer.

7. The method of manufacturing a light emitting element according to claim 1, wherein an area centroid of the active layer is not present on a normal line with respect to the first light reflecting layer that passes through the area centroid of the first light reflecting layer.