High quality factor interconnect for RF circuits
First Claim
1. A radio frequency (RF) device, comprising:
- an inductor having a first inductor terminal; and
a semiconductor die comprising;
one or more field effect transistors having device contacts that include a first device contact, wherein the first device contact of one of the one or more field effect transistors is either a source contact or a drain contact, wherein the first device contact is vertically aligned so as to be positioned directly below the first inductor terminal;
a first interconnection path that electrically connects the first inductor terminal to the first device contact, wherein the first interconnection path is vertically aligned so as to extend directly between the first inductor terminal and the first device contact; and
a first capacitive structure that is formed within the first interconnection path wherein the first capacitive structure is vertically aligned so as to be positioned directly over the first device contact and directly underneath the first inductor terminal.
2 Assignments
0 Petitions
Accused Products
Abstract
Embodiments of radio frequency (RF) devices are disclosed having interconnection paths with capacitive structures having improved quality (Q) factors. In one embodiment, an RF device includes an inductor having an inductor terminal and a semiconductor die. The semiconductor die includes one or more active semiconductor devices that include a device contact. The device contact provided by the one or more active semiconductor devices is positioned so as to be vertically aligned directly below the inductor terminal. The inductor terminal and the device contact are electrically connected with an interconnection path that includes a capacitive structure. To prevent or reduce current crowding, the interconnection path is vertically aligned so as to extend directly between the inductor terminal and the device contact. In this manner, the interconnection path electrically connects the inductor terminal and the device contact without degrading the Q factor of the RF device.
7 Citations
30 Claims
-
1. A radio frequency (RF) device, comprising:
-
an inductor having a first inductor terminal; and a semiconductor die comprising; one or more field effect transistors having device contacts that include a first device contact, wherein the first device contact of one of the one or more field effect transistors is either a source contact or a drain contact, wherein the first device contact is vertically aligned so as to be positioned directly below the first inductor terminal; a first interconnection path that electrically connects the first inductor terminal to the first device contact, wherein the first interconnection path is vertically aligned so as to extend directly between the first inductor terminal and the first device contact; and a first capacitive structure that is formed within the first interconnection path wherein the first capacitive structure is vertically aligned so as to be positioned directly over the first device contact and directly underneath the first inductor terminal. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 29)
-
-
28. An integrated circuit (IC) package comprising:
-
a package board; an inductor formed by the package board, wherein the inductor has a first inductor terminal; and a semiconductor die comprising a semiconductor substrate and a Back-End-of-Line (BEOL) formed over the semiconductor substrate, wherein; the semiconductor substrate comprises one or more field effect transistors having device contacts that include a first device contact, wherein the first device contact of one of the one or more field effect transistors is either a source contact or a drain contact, wherein the first device contact is vertically aligned so as to be positioned directly below the first inductor terminal; and the BEOL comprises; a first interconnection path that electrically connects the first inductor terminal to the first device contact, wherein the first interconnection path is vertically aligned so as to extend directly between the first inductor terminal and the first device contact; and a first capacitive structure that is formed within the interconnection path wherein the first capacitive structure is vertically aligned so as to be positioned directly over the first device contact and directly underneath the first inductor terminal. - View Dependent Claims (30)
-
Specification