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CMOS ultrasonic transducers and related apparatus and methods

  • US 9,895,718 B2
  • Filed: 11/11/2016
  • Issued: 02/20/2018
  • Est. Priority Date: 02/05/2013
  • Status: Active Grant
First Claim
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1. A method, comprising:

  • forming, on a wafer, a complementary metal oxide semiconductor (CMOS) ultrasound transducer (CUT) device having a cavity, a membrane sealing the cavity, and processing circuitry; and

    forming an electrical contact on a bottom side of the membrane, the electrical contact physically contacting the bottom side of the membrane and connecting the membrane to the processing circuitry, the bottom side of the membrane proximal the cavity, and wherein the bottom side of the membrane and the electrical contact physically contacting the bottom side of the membrane comprise a same dopant species.

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