CMOS ultrasonic transducers and related apparatus and methods
First Claim
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1. A method, comprising:
- forming, on a wafer, a complementary metal oxide semiconductor (CMOS) ultrasound transducer (CUT) device having a cavity, a membrane sealing the cavity, and processing circuitry; and
forming an electrical contact on a bottom side of the membrane, the electrical contact physically contacting the bottom side of the membrane and connecting the membrane to the processing circuitry, the bottom side of the membrane proximal the cavity, and wherein the bottom side of the membrane and the electrical contact physically contacting the bottom side of the membrane comprise a same dopant species.
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Abstract
CMOS Ultrasonic Transducers and processes for making such devices are described. The processes may include forming cavities on a first wafer and bonding the first wafer to a second wafer. The second wafer may be processed to form a membrane for the cavities. Electrical access to the cavities may be provided.
169 Citations
31 Claims
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1. A method, comprising:
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forming, on a wafer, a complementary metal oxide semiconductor (CMOS) ultrasound transducer (CUT) device having a cavity, a membrane sealing the cavity, and processing circuitry; and forming an electrical contact on a bottom side of the membrane, the electrical contact physically contacting the bottom side of the membrane and connecting the membrane to the processing circuitry, the bottom side of the membrane proximal the cavity, and wherein the bottom side of the membrane and the electrical contact physically contacting the bottom side of the membrane comprise a same dopant species. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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12. A method, comprising;
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forming, on a wafer, a complementary metal oxide semiconductor (CMOS) ultrasound transducer (CUT) device having a cavity, a membrane sealing the cavity, and processing circuitry; and forming an electrical contact on a bottom side of the membrane, the electrical contact physically contacting the bottom side of the membrane and connecting the membrane to the processing circuitry, the bottom side of the membrane proximal the cavity, and wherein the bottom side of the membrane and the electrical contact physically contacting the bottom side of the membrane comprise a same material. - View Dependent Claims (13, 14, 15, 16, 17, 18, 19, 20, 21, 22)
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23. An apparatus, comprising:
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a plurality of ultrasound elements formed on a support, wherein a first ultrasound element of the plurality of ultrasound elements comprises a first substrate having a plurality of cavities formed therein and at least one membrane overlying the plurality of cavities; a complementary metal oxide semiconductor (CMOS) circuit formed in the first substrate; and an electrical contact on the first substrate, the electrical contact disposed beneath a bottom side of the at least one membrane, physically contacting the bottom side of the at least one membrane and connecting the at least one membrane to the CMOS circuit, the bottom side of the at least one membrane being proximate the plurality of cavities, wherein the bottom side of the at least one membrane and the electrical contact physically contacting the bottom side of the at least one membrane comprise a same dopant species. - View Dependent Claims (24, 25, 26, 27, 28, 29, 30, 31)
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Specification