Compliant micro device transfer head

• US 9,895,902 B2
• Filed: 09/28/2016
• Issued: 02/20/2018
• Est. Priority Date: 05/08/2012
• Status: Active Grant

• Current Assignee: Apple Inc.
• Original Assignee: Apple Inc.
• Inventors: Bibl, Andreas, Higginson, John A., Hu, Hsin-Hua
• Primary Examiner(s): Caputo, Lisa
• Assistant Examiner(s): PLUMB, NIGEL H
• Application Number:
  US15/279,083
• Publication Number:
  US 20170015110A1
• Time in Patent Office: 510 Days
• Field of Search: 7351432, 7351416, 7351401, 73488, 347159, 347 11
• CPC Class Codes: B25J 15/0052 multiple gripper units or multiple end effectors
• CPC Class Codes: B25J 15/0085 with means for applying an electrostatic force on the object to be gripped
• CPC Class Codes: B41J 2/385 characterised by selective supply of electric current or selective application of magnetism to a printing or impression-transfer material B41J2/005 takes precedence
• CPC Class Codes: B41J 2/39 using multi-stylus heads
• CPC Class Codes: B81B 2201/038 Microengines and actuators not provided for in B81B2201/031 - B81B2201/037
• CPC Class Codes: B81C 99/002 Apparatus for assembling MEMS, e.g. micromanipulators micromanipulators per se B25J7/00
• CPC Class Codes: H01L 21/67144 Apparatus for mounting on conductive members, e.g. leadframes or conductors on insulating substrates
• CPC Class Codes: H01L 21/6835 using temporarily an auxiliary support
• CPC Class Codes: H01L 2221/68322 Auxiliary support including means facilitating the selective separation of some of a plurality of devices from the auxiliary support
• CPC Class Codes: H01L 2221/68354 used to support diced chips prior to mounting
• CPC Class Codes: H01L 2221/68363 used in a transfer process involving transfer directly from an origin substrate to a target substrate without use of an intermediate handle substrate
• CPC Class Codes: H01L 2221/68368 used in a transfer process involving at least two transfer steps, i.e. including an intermediate handle substrate
• CPC Class Codes: H01L 2221/68381 Details of chemical or physical process used for separating the auxiliary support from a device or wafer
• CPC Class Codes: H01L 2224/29036 covering only the central area of the surface to be connected
• CPC Class Codes: H01L 2224/29101 the principal constituent melting at a temperature of less than 400°C
• CPC Class Codes: H01L 2224/2919 with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
• CPC Class Codes: H01L 2224/7565 Means for transporting the components to be connected
• CPC Class Codes: H01L 2224/7598 specially adapted for batch processes
• CPC Class Codes: H01L 2224/83 using a layer connector
• CPC Class Codes: H01L 2224/83815 Reflow soldering
• CPC Class Codes: H01L 2224/83855 : Hardening the adhesive by curing, i.e. thermosetting
• CPC Class Codes: H01L 2224/95001 : involving a temporary auxiliary member not forming part of the bonding apparatus, e.g. removable or sacrificial coating, film or substrate
• CPC Class Codes: H01L 2224/97 : the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
• CPC Class Codes: H01L 24/75 : Apparatus for connecting with bump connectors or layer connectors
• CPC Class Codes: H01L 24/83 : using a layer connector
• CPC Class Codes: H01L 24/97 : the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
• CPC Class Codes: H01L 25/0753 : the devices being arranged next to each other
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/12041 : LED
• CPC Class Codes: H01L 33/0093 : Wafer bonding; Removal of the growth substrate

Abstract

A compliant micro device transfer head and head array are disclosed. In an embodiment a micro device transfer head includes a spring portion that is deflectable into a space between a base substrate and the spring portion.

Claims

1. A transfer head array comprising:

a base substrate;

an array of spring members, each spring member including;

a spring anchor coupled to the base substrate;

a spring portion including a pair of electrically separate electrodes that are deflectable towards the base substrate; and

a mesa structure that protrudes away from the base substrate; and

a dielectric layer covering the pair of electrically separate electrodes.

2. The transfer head array of claim 1, wherein each mesa structure includes a planar top surface.

3. The transfer head array of claim 1, wherein each spring member comprises a pair of mesa structures that protrudes away from the base substrate, wherein the pair of mesa structures comprises the mesa structure.

4. The transfer head array of claim 3, wherein each mesa structure includes a planar top surface.

5. The transfer head array of claim 1, wherein the spring portion is deflectable into a space between the spring portion and the base substrate.

6. The transfer head array of claim 5, wherein the space is in the base substrate.

7. The transfer head array of claim 5, wherein the spring portion comprises a cantilever beam.

8. The transfer head array of claim 5, wherein the spring portion comprises multiple cantilever beams.

9. The transfer head array of claim 8, wherein each cantilever beam comprises a bend along a length of the cantilever beam.

10. The transfer head array of claim 9, wherein each cantilever beam comprises multiple bends along a length of the cantilever beam.

11. The transfer head array of claim 5, wherein the spring portion comprises a membrane over the space.

12. The transfer head array of claim 1, wherein the spring portion comprises silicon.

13. The transfer head array of claim 12, wherein the base substrate comprises silicon.

14. The transfer head array of claim 1, wherein the dielectric layer comprises a material selected from the group consisting of aluminum oxide and tantalum oxide.