Energy storage device and method of production thereof
First Claim
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1. An energy storage device comprisinga first electrode,a second electrode, anda solid multilayer structure disposed between said first and second electrodes,wherein said electrodes are flat and planar and positioned parallel to each other, andwherein said solid multilayer structure comprises m insulating and conductive layers,said layers are disposed parallel to said electrodes, andsaid layers have the following sequence:
- A-B-(A-B- . . . A-B-)A, whereA is a homogeneous insulating layer which comprises an insulating dielectric material,B is a homogeneous conductive layer, andm is equal to 3 or more,wherein an insulating layer thickness (dins), a conductive layer thickness (dcond , a number) of the insulating layers (nins ≧
2), a dielectric permittivity of the insulating dielectric material (∈
ins) and a dielectric permittivity of the conductive layer (∈
cond) satisfy the following relation;
dcond=p·
(nins/(nins−
1)·
(∈
cond/∈
ins)·
dins, where p≧
3.
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Abstract
The present invention relates generally to the fields of electrical engineering and electronics. More specifically, the present invention relates to passive components of electrical circuitry and more particularly to energy storage devices and method of production thereof.
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Citations
21 Claims
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1. An energy storage device comprising
a first electrode, a second electrode, and a solid multilayer structure disposed between said first and second electrodes, wherein said electrodes are flat and planar and positioned parallel to each other, and wherein said solid multilayer structure comprises m insulating and conductive layers, said layers are disposed parallel to said electrodes, and said layers have the following sequence: - A-B-(A-B- . . . A-B-)A, where
A is a homogeneous insulating layer which comprises an insulating dielectric material, B is a homogeneous conductive layer, and m is equal to 3 or more, wherein an insulating layer thickness (dins), a conductive layer thickness (dcond , a number) of the insulating layers (nins ≧
2), a dielectric permittivity of the insulating dielectric material (∈
ins) and a dielectric permittivity of the conductive layer (∈
cond) satisfy the following relation;
dcond=p·
(nins/(nins−
1)·
(∈
cond/∈
ins)·
dins, where p≧
3.- View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21)
- A-B-(A-B- . . . A-B-)A, where
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5. An energy storage device according to claim 3, wherein the modifying functional groups are selected from the group consisting of alkyl, aryl, substituted alkyl, substituted aryl, and any combination thereof.
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6. An energy storage device according to claim 1, wherein said insulating layers comprise polymeric materials selected from the group consisting of fluorinated alkyls, polyethylene, kevlar, poly(vinylidene fluoride-hexafluoropropylene), polypropylene, fluorinated polypropylene, polydimethylsiloxane.
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7. An energy storage device according to claim 1, wherein the insulating layers comprise a polymeric material formed with units selected from structures 44 to 49 as follows:
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8. An energy storage device according to claim 1, wherein the conductive layers are crystalline.
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9. An energy storage device according to claim 1, wherein the conductive layers comprise material possessing molecular conductivity.
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10. An energy storage device according to claim 1, wherein said conductive layers comprise electroconductive oligomers.
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11. An energy storage device according to claim 10, wherein longitudinal axes of the electroconductive oligomers are directed predominantly perpendicularly to the electrodes.
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12. An energy storage device according to claim 10, wherein longitudinal axes of the electroconductive oligomers are directed predominantly parallel to the electrodes.
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13. An energy storage device according to claim 10, wherein the electroconductive oligomers predominantly possess lateral translational symmetry.
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14. An energy storage device according to claim 10, wherein the electroconductive oligomers are selected from the group consisting of structures 50 to 56 as follows:
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15. An energy storage device according to claim 1, wherein said conductive layers comprise low-molecular weight electroconductive polymers.
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16. An energy storage device according to claim 15, wherein the low-molecular weight electroconductive polymers have monomers selected from the group consisting of structures 50 to 56 as follows:
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17. An energy storage device according to claim 10, wherein the electroconductive oligomers further comprise substitute groups and are described by the following general structural formula II:
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(electroconductive oligomer)-Rq
(II)where Rq is a set of substitute groups, and q is a number of the substitute groups R in the set Rq, q equals to 1, 2, 3, 4, 5, 6, 7, 8, 9 or 10.
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18. An energy storage device according to claim 17, wherein the substitute groups R are independently selected from the group consisting of alkyl, aryl, substituted alkyl, substituted aryl, and any combination thereof.
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19. An energy storage device according to claim 1, wherein the electrodes comprise Pt, Cu, Al, Ag and/or Au.
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20. An energy storage device according to claim 1, wherein the electrodes comprise copper, m is equal to 3, the insulating dielectric material A comprises polyethylene, the conductive material B comprises polyaniline (PANI), insulating layer thickness is dins=25 nm, conductive layer thickness dcond=50 μ
- m, and a breakdown voltage Vbd is approximately 2 V.
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21. An energy storage device according to claim 1, wherein said electrodes comprise copper, m is equal to 7, the insulating dielectric material comprises polyethylene, the conductive material comprises polyaniline (PANI), insulating layer thickness is dins=25 nm, conductive layer thickness is dcond=50 μ
- m, and a breakdown voltage Vbd is approximately 4 V.
Specification