Energy storage device and method of production thereof

• US 9,899,150 B2
• Filed: 05/12/2015
• Issued: 02/20/2018
• Est. Priority Date: 05/12/2014
• Status: Active Grant

• Current Assignee: Capacitor Sciences Incorporated (Bolloré SE)
• Original Assignee: Capacitor Sciences Incorporated (Bolloré SE)
• Inventors: Lazarev, Pavel Ivan
• Primary Examiner(s): Ferguson, Dion R
• Application Number:
  US14/710,480
• Publication Number:
  US 20160020026A1
• Time in Patent Office: 1,015 Days
• CPC Class Codes: H01G 4/14 Organic dielectrics
• CPC Class Codes: H01G 4/30 Stacked capacitors H01G4/33 takes precedence
• CPC Class Codes: H01G 4/33 Thin- or thick-film capacitors thin- or thick-film circuits H01L27/00; capacitors without a potential-jump or surface barrier specially adapted for integrated circuits, details thereof, multistep manufacturing processes therefor H01L28/40

Abstract

The present invention relates generally to the fields of electrical engineering and electronics. More specifically, the present invention relates to passive components of electrical circuitry and more particularly to energy storage devices and method of production thereof.

Claims

1. An energy storage device comprising

a first electrode,

a second electrode, and

a solid multilayer structure disposed between said first and second electrodes,

wherein said electrodes are flat and planar and positioned parallel to each other, and

wherein said solid multilayer structure comprises m insulating and conductive layers,

said layers are disposed parallel to said electrodes, and

said layers have the following sequence:

A-B-(A-B- . . . A-B-)A, where

A is a homogeneous insulating layer which comprises an insulating dielectric material,

B is a homogeneous conductive layer, and

m is equal to 3 or more,

wherein an insulating layer thickness (d_ins), a conductive layer thickness (d_cond , a number) of the insulating layers (n_ins ≧

2), a dielectric permittivity of the insulating dielectric material (∈

_ins) and a dielectric permittivity of the conductive layer (∈

_cond) satisfy the following relation;

d_cond=p·

(n_ins/(n_ins−

1)·

(∈

_cond/∈

_ins)·

d_ins, where p≧

3.

2. An energy storage device according to claim 1, wherein said insulating layers are crystalline.

3. An energy storage device according to claim 1, wherein said insulating layers comprise modified organic compounds of the general structural formula I:

{Cor}(M)n, 

 

(I)

where Cor is a polycyclic organic compound with conjugated π

-system, M are modifying functional groups; and

n is the number of the modifying functional groups, where n is equal to 1 or more.

4. An energy storage device according to claim 3, wherein the polycyclic organic compound is selected from the group consisting of oligophenyl, imidazole, pyrazole, acenaphthene, triaizine, and indanthrone, and the polycyclic organic compound has a general structural formula selected from the group consisting of structures 1-43 as follows:

5. An energy storage device according to claim 3, wherein the modifying functional groups are selected from the group consisting of alkyl, aryl, substituted alkyl, substituted aryl, and any combination thereof.

6. An energy storage device according to claim 1, wherein said insulating layers comprise polymeric materials selected from the group consisting of fluorinated alkyls, polyethylene, kevlar, poly(vinylidene fluoride-hexafluoropropylene), polypropylene, fluorinated polypropylene, polydimethylsiloxane.

7. An energy storage device according to claim 1, wherein the insulating layers comprise a polymeric material formed with units selected from structures 44 to 49 as follows:

8. An energy storage device according to claim 1, wherein the conductive layers are crystalline.

9. An energy storage device according to claim 1, wherein the conductive layers comprise material possessing molecular conductivity.

10. An energy storage device according to claim 1, wherein said conductive layers comprise electroconductive oligomers.

11. An energy storage device according to claim 10, wherein longitudinal axes of the electroconductive oligomers are directed predominantly perpendicularly to the electrodes.

12. An energy storage device according to claim 10, wherein longitudinal axes of the electroconductive oligomers are directed predominantly parallel to the electrodes.

13. An energy storage device according to claim 10, wherein the electroconductive oligomers predominantly possess lateral translational symmetry.

14. An energy storage device according to claim 10, wherein the electroconductive oligomers are selected from the group consisting of structures 50 to 56 as follows:

15. An energy storage device according to claim 1, wherein said conductive layers comprise low-molecular weight electroconductive polymers.

16. An energy storage device according to claim 15, wherein the low-molecular weight electroconductive polymers have monomers selected from the group consisting of structures 50 to 56 as follows:

17. An energy storage device according to claim 10, wherein the electroconductive oligomers further comprise substitute groups and are described by the following general structural formula II:

(electroconductive oligomer)-R_q 

 

(II)

where R_q is a set of substitute groups, and q is a number of the substitute groups R in the set R_q, q equals to 1, 2, 3, 4, 5, 6, 7, 8, 9 or 10.

18. An energy storage device according to claim 17, wherein the substitute groups R are independently selected from the group consisting of alkyl, aryl, substituted alkyl, substituted aryl, and any combination thereof.

19. An energy storage device according to claim 1, wherein the electrodes comprise Pt, Cu, Al, Ag and/or Au.

20. An energy storage device according to claim 1, wherein the electrodes comprise copper, m is equal to 3, the insulating dielectric material A comprises polyethylene, the conductive material B comprises polyaniline (PANI), insulating layer thickness is d_ins=25 nm, conductive layer thickness d_cond=50 μ

m, and a breakdown voltage V_bd is approximately 2 V.

21. An energy storage device according to claim 1, wherein said electrodes comprise copper, m is equal to 7, the insulating dielectric material comprises polyethylene, the conductive material comprises polyaniline (PANI), insulating layer thickness is d_ins=25 nm, conductive layer thickness is d_cond=50 μ

m, and a breakdown voltage V_bd is approximately 4 V.