Fin field effect transistor (FinFET) device structure with different gate profile and method for forming the same
First Claim
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1. A fin field effect transistor (FinFET) device structure, comprising:
- a fin structure formed over a substrate;
an isolation structure formed over the substrate; and
a first gate structure and a second gate structure formed over the fin structure, wherein the first gate structure has a first top width in a direction that is parallel to the fin structure, the second gate structure has a second top width in a direction that is parallel to the fin structure, and the first top width is greater than the second top width, wherein a first angle is between a top surface of the first gate structure and a sidewall surface of the first gate structure, a second angle is between a top surface of the second gate structure and a sidewall surface of the second gate structure, and the second angle is greater than the first angle.
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Abstract
A FinFET device structure is provided. The FinFET device structure includes a fin structure formed over a substrate and an isolation structure formed over the substrate. The FinFET device structure includes a first gate structure and a second gate structure formed over the fin structure. The first gate structure has a first top width in a direction that is parallel to the fin structure, the second gate structure has a second top width in a direction that is parallel to the fin structure, and the first top width is greater than the second top width.
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Citations
18 Claims
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1. A fin field effect transistor (FinFET) device structure, comprising:
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a fin structure formed over a substrate; an isolation structure formed over the substrate; and a first gate structure and a second gate structure formed over the fin structure, wherein the first gate structure has a first top width in a direction that is parallel to the fin structure, the second gate structure has a second top width in a direction that is parallel to the fin structure, and the first top width is greater than the second top width, wherein a first angle is between a top surface of the first gate structure and a sidewall surface of the first gate structure, a second angle is between a top surface of the second gate structure and a sidewall surface of the second gate structure, and the second angle is greater than the first angle. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A fin field effect transistor (FinFET) device structure, comprising:
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a fin structure formed over a substrate; an isolation structure formed over the substrate; and a first gate structure and a second gate structure formed over the fin structure, wherein the first gate structure has a trapezoid-shaped structure, the second gate structure has a trapezoid-shaped structure, and a first angle is between a top surface of the first gate structure and a sidewall surface of the first gate structure, a second angle is between a top surface of the first gate structure and a sidewall surface of the second gate structure, and the second angle is greater than the first angle. - View Dependent Claims (11, 12, 13, 14)
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15. A fin field effect transistor (FinFET) device structure, comprising:
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a fin structure formed over a substrate; an isolation structure formed over the substrate; a first gate structure and a second gate structure formed over the fin structure; and an inter-layer dielectric (ILD) structure between the first gate structure and the second gate structure, wherein the ILD structure has a trapezoid-shaped structure, and the ILD structure comprises an undoped portion and a doped portion, and a first sidewall of the undoped portion is not parallel to a second sidewall of the doped portion. - View Dependent Claims (16, 17, 18)
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Specification