Semiconductor device and semiconductor device production system

• US 9,899,419 B2
• Filed: 10/27/2015
• Issued: 02/20/2018
• Est. Priority Date: 01/17/2002
• Status: Expired due to Fees

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Isobe, Atsuo, Yamazaki, Shunpei, Dairiki, Koji, Shibata, Hiroshi, Kokubo, Chiho, Arao, Tatsuya, Hayakawa, Masahiko, Miyairi, Hidekazu, Shimomura, Akihisa, Tanaka, Koichiro, Akiba, Mai
• Primary Examiner(s): Nguyen, Cuong Q
• Application Number:
  US14/924,100
• Publication Number:
  US 20160111451A1
• Time in Patent Office: 847 Days
• CPC Class Codes: B23K 26/0738 into a linear shape
• CPC Class Codes: H01L 21/02354 using a coherent radiation, e.g. a laser
• CPC Class Codes: H01L 21/02356 treatment to change the morphology of the insulating layer, e.g. transformation of an amorphous layer into a crystalline layer
• CPC Class Codes: H01L 21/02381 Silicon, silicon germanium, germanium
• CPC Class Codes: H01L 21/0242 Crystalline insulating materials
• CPC Class Codes: H01L 21/02422 Non-crystalline insulating materials, e.g. glass, polymers
• CPC Class Codes: H01L 21/02425 Conductive materials, e.g. metallic silicides
• CPC Class Codes: H01L 21/02488 Insulating materials
• CPC Class Codes: H01L 21/02532 Silicon, silicon germanium, germanium
• CPC Class Codes: H01L 21/02672 using crystallisation enhancing elements
• CPC Class Codes: H01L 21/02675 using laser beams
• CPC Class Codes: H01L 21/02678 Beam shaping, e.g. using a mask
• CPC Class Codes: H01L 21/02683 Continuous wave laser beam
• CPC Class Codes: H01L 21/02686 Pulsed laser beam
• CPC Class Codes: H01L 21/02691 Scanning of a beam
• CPC Class Codes: H01L 21/32139 using masks
• CPC Class Codes: H01L 21/84 the substrate being other than a semiconductor body, e.g. being an insulating body
• CPC Class Codes: H01L 27/1214 comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
• CPC Class Codes: H01L 27/1218 with a particular composition or structure of the substrate
• CPC Class Codes: H01L 27/1222 with a particular composition, shape or crystalline structure of the active layer
• CPC Class Codes: H01L 27/124 : with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits wiring structures per se H01L23/52
• CPC Class Codes: H01L 27/1255 : integrated with passive devices, e.g. auxiliary capacitors
• CPC Class Codes: H01L 27/1274 : using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor
• CPC Class Codes: H01L 27/1281 : by using structural features to control crystal growth, e.g. placement of grain filters
• CPC Class Codes: H01L 27/1296 : adapted to increase the uniformity of device parameters
• CPC Class Codes: H01L 29/66757 : Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate
• CPC Class Codes: H01L 29/78603 : characterised by the insulating substrate or support H01L29/78657 takes precedence
• CPC Class Codes: H01L 29/78675 : with normal-type structure, e.g. with top gate
• CPC Class Codes: H01L 29/78696 : characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel H01L29/78612 takes precedence; transistors having a drain offset region or a lightly doped drain [LDD] H01L29/78621
• CPC Class Codes: Y10S 118/90 : Semiconductor vapor doping
• CPC Class Codes: Y10T 117/10 : Apparatus
• CPC Class Codes: Y10T 117/1004 : with means for measuring, testing, or sensing
• CPC Class Codes: Y10T 117/1008 : with responsive control means

Abstract

A semiconductor device production system using a laser crystallization method is provided which can avoid forming grain boundaries in a channel formation region of a TFT, thereby preventing grain boundaries from lowering the mobility of the TFT greatly, from lowering ON current, and from increasing OFF current. Rectangular or stripe pattern depression and projection portions are formed on an insulating film. A semiconductor film is formed on the insulating film. The semiconductor film is irradiated with continuous wave laser light by running the laser light along the stripe pattern depression and projection portions of the insulating film or along the major or minor axis direction of the rectangle. Although continuous wave laser light is most preferred among laser light, it is also possible to use pulse oscillation laser light in irradiating the semiconductor film.

Claims

1. A semiconductor device comprising:

a pixel portion comprising;

an insulating layer;

a transistor comprising a semiconductor layer; and

a wiring electrically connected to the transistor, and

a driver circuit electrically connected to the wiring,

wherein the transistor is provided over the insulating layer,

wherein the semiconductor layer comprises a channel formation region,

wherein the insulating layer comprises a depression portion and a projection portion,

wherein the channel formation region is provided over the depression portion, and

wherein the wiring is provided over the depression portion and the projection portion.

2. The semiconductor device according to claim 1, wherein the projection portion is a rectangular or stripe pattern.

3. The semiconductor device according to claim 1, wherein the semiconductor layer is a crystalline semiconductor film.

4. The semiconductor device according to claim 3, wherein the crystalline semiconductor film is formed by irradiating an amorphous semiconductor film with laser light.

5. The semiconductor device according to claim 1, wherein the wiring faces a side surface of the semiconductor layer.

6. The semiconductor device according to claim 1, wherein an oxygen concentration in the channel formation region is 2×

10¹⁹ atoms/cm³ or less.

7. The semiconductor device according to claim 1, wherein a carbon concentration in the channel formation region is 5×

10¹⁸ atoms/cm³ or less.

8. The semiconductor device according to claim 1, wherein a nitrogen concentration in the channel formation region is 1×

10¹⁹ atoms/cm³ or less.

9. The semiconductor device according to claim 1, wherein the semiconductor device is one selected from the group consisting of a display apparatus, a camera, a computer, a goggle type display, and a phone.

10. A semiconductor device comprising:

a pixel portion comprising;

an insulating layer;

a transistor comprising a semiconductor layer; and

a wiring electrically connected to the transistor,

a driver circuit electrically connected to the wiring; and

a shield pattern surrounding the pixel portion and the driver circuit,

wherein the transistor is provided over the insulating layer,

wherein the semiconductor layer comprises a channel formation region,

wherein the insulating layer comprises a depression portion and a projection portion,

wherein the channel formation region is provided over the depression portion,

wherein the wiring is provided over the depression portion and the projection portion, and

wherein the shield pattern overlaps with the driver circuit.

11. The semiconductor device according to claim 10, wherein the projection portion is a rectangular or stripe pattern.

12. The semiconductor device according to claim 10, wherein the semiconductor layer is a crystalline semiconductor film.

13. The semiconductor device according to claim 12, wherein the crystalline semiconductor film is formed by irradiating an amorphous semiconductor film with laser light.

14. The semiconductor device according to claim 10, wherein the wiring faces a side surface of the semiconductor layer.

15. The semiconductor device according to claim 10, wherein an oxygen concentration in the channel formation region is 2×

10¹⁹ atoms/cm³ or less.

16. The semiconductor device according to claim 10, wherein a carbon concentration in the channel formation region is 5×

10¹⁸ atoms/cm³ or less.

17. The semiconductor device according to claim 10, wherein a nitrogen concentration in the channel formation region is 1×

10¹⁹ atoms/cm³ or less.

18. The semiconductor device according to claim 10, wherein the semiconductor device is one selected from the group consisting of a display apparatus, a camera, a computer, a goggle type display, and a phone.