Semiconductor device and display device including the semiconductor device

• US 9,899,423 B2
• Filed: 10/27/2016
• Issued: 02/20/2018
• Est. Priority Date: 07/10/2013
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Yamazaki, Shunpei, Miyake, Hiroyuki, Sato, Takahiro, Jintyou, Masami
• Primary Examiner(s): Nguyen, Dao H
• Application Number:
  US15/335,510
• Publication Number:
  US 20170047354A1
• Time in Patent Office: 481 Days
• Field of Search: 257 43, 257 53, 257 57, 257 72, 257 88, 257E29151, 349141, 349147, 349152, 349 47, 438 34, 438104, 438128, 438149
• CPC Class Codes: G02F 1/13306 Circuit arrangements or driving methods for the control of single liquid crystal cells G02F1/132, G02F1/133382 take precedence
• CPC Class Codes: G02F 1/133345 Insulating layers G02F1/1335, G02F1/1337, G02F1/135, G02F1/136 take precedence
• CPC Class Codes: G02F 1/13338 Input devices, e.g. touch panels
• CPC Class Codes: G02F 1/134336 Matrix
• CPC Class Codes: G02F 1/136286 Wiring, e.g. gate line, drain line
• CPC Class Codes: G02F 1/1368 in which the switching element is a three-electrode device G02F1/136277 takes precedence
• CPC Class Codes: G02F 2201/123 pixel
• CPC Class Codes: G06F 2203/04103 Manufacturing, i.e. details related to manufacturing processes specially suited for touch sensitive devices
• CPC Class Codes: G06F 3/041 Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
• CPC Class Codes: H01L 27/1225 with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
• CPC Class Codes: H01L 27/124 with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits wiring structures per se H01L23/52
• CPC Class Codes: H01L 27/1288 employing particular masking sequences or specially adapted masks, e.g. half-tone mask
• CPC Class Codes: H01L 29/41733 for thin film transistors with insulated gate
• CPC Class Codes: H01L 29/42384 for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor
• CPC Class Codes: H01L 29/4908 for thin film semiconductor, e.g. gate of TFT
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate

Abstract

A semiconductor device including a transistor and a connection portion is provided. The transistor includes a gate electrode, a first insulating film over the gate electrode, an oxide semiconductor film over the first insulating film and at a position overlapping with the gate electrode, and source and drain electrodes electrically connected to the oxide semiconductor film; and the connection portion includes a first wiring on the same surface as a surface on which the gate electrode is formed, a second wiring on the same surface as a surface on which the source and drain electrodes are formed, and a third wiring connecting the first wiring and the second wiring. The distance between an upper end portion and a lower end portion of the second wiring is longer than the distance between an upper end portion and a lower end portion of each of the source and drain electrodes.

Claims

1. A display device comprising:

a gate electrode over an insulating surface;

a first wiring over the insulating surface;

a first insulating film over the gate electrode and the first wiring;

an oxide semiconductor layer over the first insulating film, the oxide semiconductor layer comprising a channel formation region over the gate electrode with the first insulating film interposed therebetween;

a source electrode over and in contact with the oxide semiconductor layer;

a drain electrode over and in contact with the oxide semiconductor layer;

a second wiring over the first insulating film;

a second insulating film over the source electrode, the drain electrode and the second wiring;

a metal oxide film over the second insulating film; and

a silicon nitride film in contact with the metal oxide film and over the second insulating film,

wherein the metal oxide film contacts the first wiring through a first opening of the first insulating film and a second opening of the second insulating film, and

wherein the metal oxide film contacts the second wiring through a third opening of the second insulating film.

2. The display device according to claim 1, wherein the second wiring has a smaller taper angle than the source electrode and the drain electrode.

3. The display device according to claim 1, wherein the metal oxide film includes indium.

4. The display device according to claim 1, further comprising a conductive film over the second insulating film, the conductive film contacting the drain electrode.

5. The display device according to claim 1, further comprising an oxide semiconductor layer in contact with the second wiring.

6. An electronic device comprising the display device according to claim 1, the electronic device comprising a touch panel adjacent to the display device.

7. A display device comprising:

a gate electrode over an insulating surface;

a first wiring over the insulating surface;

a first insulating film over the gate electrode and the first wiring;

an oxide semiconductor layer over the first insulating film, the oxide semiconductor layer comprising a channel formation region over the gate electrode with the first insulating film interposed therebetween;

a source electrode over and in contact with the oxide semiconductor layer;

a drain electrode over and in contact with the oxide semiconductor layer;

a second wiring over the first insulating film;

a second insulating film over the source electrode, the drain electrode and the second wiring;

a metal oxide film over the second insulating film; and

a silicon nitride film in contact with the metal oxide film and over the second insulating film,

wherein the metal oxide film contacts the first wiring through a first opening of the first insulating film and a second opening of the second insulating film,

wherein the metal oxide film contacts the second wiring through a third opening of the second insulating film, and

wherein the first wiring and the second wiring do not overlap each other.

8. The display device according to claim 7, wherein the second wiring has a smaller taper angle than the source electrode and the drain electrode.

9. The display device according to claim 7, wherein the metal oxide film includes indium.

10. The display device according to claim 7, further comprising a conductive film over the second insulating film, the conductive film contacting the drain electrode.

11. The display device according to claim 7, further comprising an oxide semiconductor layer in contact with the second wiring.

12. An electronic device comprising the display device according to claim 7, the electronic device comprising a touch panel adjacent to the display device.

13. A display device comprising:

a first gate electrode over an insulating surface;

a first wiring over the insulating surface;

a first insulating film over the first gate electrode and the first wiring;

an oxide semiconductor layer over the first insulating film, the oxide semiconductor layer comprising a channel formation region over the first gate electrode with the first insulating film interposed therebetween;

a source electrode over and in contact with the oxide semiconductor layer;

a drain electrode over and in contact with the oxide semiconductor layer;

a second wiring over the first insulating film;

a second insulating film over the source electrode, the drain electrode and the second wiring;

a metal oxide film over the second insulating film;

a silicon nitride film in contact with the metal oxide film and over the second insulating film; and

a second gate electrode over the second insulating film, the second gate electrode overlapping with the oxide semiconductor layer,

wherein the metal oxide film contacts the first wiring through a first opening of the first insulating film and a second opening of the second insulating film, and

wherein the metal oxide film contacts the second wiring through a third opening of the second insulating film.

14. The display device according to claim 13, wherein the second wiring has a smaller taper angle than the source electrode and the drain electrode.

15. The display device according to claim 13, wherein the metal oxide film includes indium.

16. The display device according to claim 13, further comprising a conductive film over the second insulating film, the conductive film contacting the drain electrode.

17. The display device according to claim 13, further comprising an oxide semiconductor layer in contact with the second wiring.

18. An electronic device comprising the display device according to claim 13, the electronic device comprising a touch panel adjacent to the display device.