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Semiconductor device and display device including the semiconductor device

  • US 9,899,423 B2
  • Filed: 10/27/2016
  • Issued: 02/20/2018
  • Est. Priority Date: 07/10/2013
  • Status: Active Grant
First Claim
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1. A display device comprising:

  • a gate electrode over an insulating surface;

    a first wiring over the insulating surface;

    a first insulating film over the gate electrode and the first wiring;

    an oxide semiconductor layer over the first insulating film, the oxide semiconductor layer comprising a channel formation region over the gate electrode with the first insulating film interposed therebetween;

    a source electrode over and in contact with the oxide semiconductor layer;

    a drain electrode over and in contact with the oxide semiconductor layer;

    a second wiring over the first insulating film;

    a second insulating film over the source electrode, the drain electrode and the second wiring;

    a metal oxide film over the second insulating film; and

    a silicon nitride film in contact with the metal oxide film and over the second insulating film,wherein the metal oxide film contacts the first wiring through a first opening of the first insulating film and a second opening of the second insulating film, andwherein the metal oxide film contacts the second wiring through a third opening of the second insulating film.

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