Light emitting apparatus

• US 9,899,581 B2
• Filed: 07/01/2015
• Issued: 02/20/2018
• Est. Priority Date: 12/09/2009
• Status: Active Grant

• Current Assignee: Suzhou Lekin Semiconductor Company Limited
• Original Assignee: LG Innotek Company Limited (LG Corporation)
• Inventors: Choi, Kwang Ki, Jeong, Hwan Hee, Lee, Sang Youl, Song, June O
• Primary Examiner(s): HSIEH, HSIN YI
• Application Number:
  US14/789,808
• Publication Number:
  US 20150303351A1
• Time in Patent Office: 965 Days
• Field of Search: 257 99
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01L 2924/12032 Schottky diode
• CPC Class Codes: H01L 33/20 with a particular shape, e.g. curved or truncated substrate
• CPC Class Codes: H01L 33/38 with a particular shape
• CPC Class Codes: H01L 33/44 characterised by the coatings, e.g. passivation layer or anti-reflective coating
• CPC Class Codes: H01L 33/58 Optical field-shaping elements
• CPC Class Codes: H01L 33/60 Reflective elements
• CPC Class Codes: H01L 33/62 Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Abstract

A light emitting device including a contact layer, a blocking layer over the contact layer, a protection layer adjacent the blocking layer, a light emitter over the blocking layer, and an electrode layer coupled to the light emitter. The electrode layer overlaps the blocking layer and protection layer, and the blocking layer has an electrical conductivity that substantially blocks flow of current from the light emitter in a direction towards the contact layer. In addition, the protection layer may be conductive to allow current to flow to the light emitter or non-conductive to block current from flowing from the light emitter towards the contact layer.

Claims

1. A light emitting device comprising:

a conductive support substrate;

a bonding layer on the conductive support substrate;

a light emitting structure layer on the bonding layer;

a passivation layer provided on a side surface and a top surface of the light emitting structure layer;

a first metal layer between the bonding layer and the passivation layer, wherein the first metal layer is directly in-contact with a bottom surface of the passivation layer; and

an electrode structure disposed on the light emitting structure layer,

wherein the electrode structure includes an outer electrode including a first part and a second part, an inner electrode provided in a region between the first part and the second part of the outer electrode and extending to electrically connect the first part of the outer electrode with the second part of the outer electrode, and a pad electrically connected to at least one of the first part and the second part of the outer electrode,

wherein the outer electrode is spaced apart within a distance of 50 μ

m from an outermost side of the light emitting structure layer,

wherein the first metal layer includes at least one of Pt, Ti, W, Ni, Pd, Rh, Ir, or W,

wherein the electrode structure comprises at least one roughness pattern on a top surface of the electrode structure,

wherein the roughness pattern is directly in-contact with the passivation layer,

wherein a top surface of the passivation layer is higher than a top most surface of the roughness pattern, and

wherein a width of the pad is less than a distance between the outer electrode and the inner electrode.

2. The light emitting device of claim 1, wherein the outer electrode includes an outer side surface and an inner side surface with a width between the outer side surface and the inner side surface, and

wherein the outer side surface of the outer electrode is within 50 μ

m from the outermost side of the light emitting structure layer.

3. The light emitting device of claim 1, wherein a width of the outer electrode is different from a width of the inner electrode.

4. The light emitting device of claim 1, wherein the outer electrode has a width greater than a width of the inner electrode.

5. The light emitting device of claim 1, further comprising a second metal layer including a reflective metal on the bonding layer.

6. The light emitting device of claim 5, wherein the second metal layer comprises a recess.

7. The light emitting device of claim 5, wherein the second metal layer comprises an ohmic contact layer.

8. The light emitting device of claim 5, wherein a portion of the inner electrode at least partially overlaps with the current blocking layer.

9. The light emitting device of claim 1, wherein at least one of the first part and the second part of the outer electrode comprises a first section extending from the pad and a second section extending from the first section, and

wherein a width of the first section is greater than a width of the second section.

10. The light emitting device of claim 1, wherein a width of the first part of the outer electrode is within a range of 15 μ

m to 25 μ

m.

11. A light emitting device package comprising:

at least one of a package body;

a first electrode layer and a second electrode layer disposed on the package body; and

the light emitting device according to claim 1, which is disposed on the package body.

12. The light emitting device of claim 1, wherein the first metal layer is directly in-contact with a top surface of the bonding layer.

13. The light emitting device of claim 1, wherein an edge side surface of first metal layer is exposed.

14. The light emitting device of claim 1, wherein an edge side surface of first metal layer is exposed, and the edge side surface of first metal layer is aligned with at least one portion of an edge side surface of the passivation layer.

15. The light emitting device of claim 5, wherein an edge side surface of the second metal layer is not exposed.

16. The light emitting device of claim 5, wherein the first metal layer is overlapped with the second metal layer.

17. The light emitting device of claim 1, wherein the electrode structure comprises at least one second roughness pattern on a bottom surface of the electrode structure.

18. The light emitting device of claim 5, further comprising a current blocking layer between the second metal layer and the light emitting structure layer.

19. The light emitting device of claim 1, wherein a length of at least one side of the light emitting structure layer is 800˜

1200 μ

m, and the inner electrode consists of a first inner electrode and a second inner electrode.

20. The light emitting device of claim 19, wherein the pad consists of a first pad and a second pad.

21. The light emitting device of claim 1, wherein a length of at least one side of the light emitting structure layer is 400˜

800 μ

m, and the inner electrode consists of a first inner electrode.

22. The light emitting device of claim 21, wherein the pad consists of a first pad.

23. The light emitting device of claim 1, wherein an inclined side surface of the roughness pattern is directly in-contact with the passivation layer.

24. The light emitting device of claim 1, wherein the roughness pattern is vertically overlapped with the first metal layer.