Liquid crystal display device
First Claim
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1. A semiconductor device comprising:
- a first pixel comprising;
a first common electrode over an insulating surface;
a gate electrode over the insulating surface;
a common wiring in contact with a top surface of the first common electrode;
a gate insulating layer over the first common electrode, the gate electrode, and the common wiring;
a semiconductor layer over the gate insulating layer;
an insulating layer over the gate insulating layer and the semiconductor layer;
a pixel electrode over the insulating layer; and
a connection electrode over the insulating layer; and
a second pixel adjacent to the first pixel,wherein the first common electrode comprises a region overlapping with the connection electrode and a region not overlapping with the connection electrode,wherein the first common electrode is electrically connected to a second common electrode of the second pixel though the connection electrode,wherein the first common electrode and the second common electrode are formed by processing a first transparent conductive layer,wherein the gate electrode and the common wiring are formed by processing a second light-shielding conductive layer, andwherein the pixel electrode and the connection electrode are formed by processing a third transparent conductive layer.
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Abstract
It is an object of the present invention to apply a sufficient electrical field to a liquid crystal material in a horizontal electrical field liquid crystal display device typified by an FFS type. In a horizontal electrical field liquid crystal display, an electrical field is applied to a liquid crystal material right above a common electrode and a pixel electrode using plural pairs of electrodes rather than one pair of electrodes. One pair of electrodes includes a comb-shaped common electrode and a comb-shaped pixel electrode. Another pair of electrodes includes a common electrode provided in a pixel portion and the comb-shaped pixel electrode.
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Citations
10 Claims
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1. A semiconductor device comprising:
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a first pixel comprising; a first common electrode over an insulating surface; a gate electrode over the insulating surface; a common wiring in contact with a top surface of the first common electrode; a gate insulating layer over the first common electrode, the gate electrode, and the common wiring; a semiconductor layer over the gate insulating layer; an insulating layer over the gate insulating layer and the semiconductor layer; a pixel electrode over the insulating layer; and a connection electrode over the insulating layer; and a second pixel adjacent to the first pixel, wherein the first common electrode comprises a region overlapping with the connection electrode and a region not overlapping with the connection electrode, wherein the first common electrode is electrically connected to a second common electrode of the second pixel though the connection electrode, wherein the first common electrode and the second common electrode are formed by processing a first transparent conductive layer, wherein the gate electrode and the common wiring are formed by processing a second light-shielding conductive layer, and wherein the pixel electrode and the connection electrode are formed by processing a third transparent conductive layer. - View Dependent Claims (2, 3)
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4. A semiconductor device comprising:
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a first pixel comprising; a first common electrode over an insulating surface; a gate electrode over the insulating surface; a common wiring in contact with a top surface of the first common electrode; a gate insulating layer over the first common electrode, the gate electrode, and the common wiring; a semiconductor layer over the gate insulating layer; an insulating layer over the gate insulating layer and the semiconductor layer; a pixel electrode over the insulating layer; and a connection electrode over the insulating layer; and a second pixel adjacent to the first pixel, wherein the first common electrode comprises a region overlapping with the connection electrode and a region not overlapping with the connection electrode, wherein the first common electrode is electrically connected to a second common electrode of the second pixel though the connection electrode, wherein the first common electrode and the second common electrode comprise a transparent conductive material and are in contact with the insulating surface, wherein the gate electrode and the common wiring comprise a light-shielding conductive material and are in contact with a bottom surface of the gate insulating layer, and wherein the pixel electrode and the connection electrode comprise a transparent conductive material. - View Dependent Claims (5, 6, 7)
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8. A semiconductor device comprising:
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a first pixel comprising; a first common electrode over an insulating surface; a gate electrode over the insulating surface; a common wiring in contact with a top surface of the first common electrode; a gate insulating layer over the first common electrode, the gate electrode, and the common wiring; a semiconductor layer over the gate insulating layer; a first insulating layer over the gate insulating layer and the semiconductor layer; a pixel electrode over the first insulating layer; a connection electrode over the first insulating layer; and a second insulating layer over the pixel electrode; and a second pixel adjacent to the first pixel, wherein the first common electrode comprises a region overlapping with the connection electrode and a region not overlapping with the connection electrode, wherein the first common electrode is electrically connected to a second common electrode of the second pixel though the connection electrode, wherein the first common electrode and the second common electrode are formed by processing a first transparent conductive layer, wherein the gate electrode and the common wiring are formed by processing a second light-shielding conductive layer, wherein the pixel electrode and the connection electrode are formed by processing a third transparent conductive layer, wherein the second insulating layer is capable of adjusting cell gap, and wherein the second insulating layer comprise a region overlapping with the common wiring. - View Dependent Claims (9, 10)
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Specification