Si precursors for deposition of SiN at low temperatures
First Claim
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1. A plasma enhanced atomic layer deposition (PEALD) process for depositing a silicon nitride thin film on a substrate in a reaction space comprising:
- contacting the substrate with a vapor phase silicon reactant comprising iodine; and
contacting the substrate with reactive species generated by a plasma from a nitrogen precursor;
wherein a ratio of an etch rate of the silicon nitride thin film in 0.5% aqueous HF deposited on a sidewall of a three-dimensional feature to an etch rate of the silicon nitride film in 0.5% aqueous HF deposited on a top surface of the three-dimensional feature is less than about 2.
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Abstract
Methods and precursors for depositing silicon nitride films by atomic layer deposition (ALD) are provided. In some embodiments the silicon precursors comprise an iodine ligand. The silicon nitride films may have a relatively uniform etch rate for both vertical and the horizontal portions when deposited onto three-dimensional structures such as FinFETS or other types of multiple gate FETs. In some embodiments, various silicon nitride films of the present disclosure have an etch rate of less than half the thermal oxide removal rate with diluted HF (0.5%).
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Citations
19 Claims
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1. A plasma enhanced atomic layer deposition (PEALD) process for depositing a silicon nitride thin film on a substrate in a reaction space comprising:
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contacting the substrate with a vapor phase silicon reactant comprising iodine; and contacting the substrate with reactive species generated by a plasma from a nitrogen precursor; wherein a ratio of an etch rate of the silicon nitride thin film in 0.5% aqueous HF deposited on a sidewall of a three-dimensional feature to an etch rate of the silicon nitride film in 0.5% aqueous HF deposited on a top surface of the three-dimensional feature is less than about 2. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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13. A plasma enhanced atomic layer deposition (PEALD) process for forming a silicon nitride thin film on a substrate in a reaction space comprising a plurality of deposition cycles, each deposition cycle comprising:
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alternately and sequentially contacting the substrate with a vapor phase silicon reactant comprising iodine and reactive species comprising nitrogen; wherein a ratio of an etch rate of the silicon nitride thin film in 0.5% aqueous HF deposited on a vertical surface of a three-dimensional feature to an etch rate of the silicon nitride film in 0.5% aqueous HF deposited on a horizontal surface of the three-dimensional feature is less than about 2. - View Dependent Claims (14, 15, 16, 17, 18, 19)
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Specification