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Neutral atom beam nitridation for copper interconnect

  • US 9,905,459 B1
  • Filed: 09/01/2016
  • Issued: 02/27/2018
  • Est. Priority Date: 09/01/2016
  • Status: Active Grant
First Claim
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1. A method of forming an interconnect comprising:

  • forming an opening in a dielectric layer;

    treating a dielectric surface of the opening in the dielectric layer with a nitridation treatment to convert the dielectric surface to a nitrided surface, wherein the nitridation treatment comprises a neutral atom beam nitridation;

    depositing a tantalum containing layer on the nitrided surface; and

    depositing metal fill material on the tantalum containing layer.

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