Semiconductor device with vertical memory
First Claim
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1. A semiconductor device, comprising:
- a substrate including a memory cell array region;
a memory cell array on the memory cell array region, the memory cell array including;
a channel layer extending in a vertical direction on the substrate, andat least one ground selection line, at least one word line, and at least one string selection line spaced apart in the vertical direction along a sidewall of the channel layer;
at least one first p well outside the memory cell array region on the substrate; and
at least one buried contact between the at least one first p well and the substrate,wherein the at least one first p well includes an impurity region doped with p-type impurities having a doping concentration that increases in a vertically downward direction toward the substrate.
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Abstract
A semiconductor device includes a peripheral circuit region on a substrate, a polysilicon layer on the peripheral circuit region, a memory cell array region on the polysilicon layer and overlapping the peripheral circuit region, the peripheral circuit region being under the memory cell array region, an upper interconnection layer on the memory cell array region, and a vertical contact through the memory cell array region and the polysilicon layer, the vertical contact connecting the upper interconnection layer to the peripheral circuit region.
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Citations
14 Claims
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1. A semiconductor device, comprising:
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a substrate including a memory cell array region; a memory cell array on the memory cell array region, the memory cell array including; a channel layer extending in a vertical direction on the substrate, and at least one ground selection line, at least one word line, and at least one string selection line spaced apart in the vertical direction along a sidewall of the channel layer; at least one first p well outside the memory cell array region on the substrate; and at least one buried contact between the at least one first p well and the substrate, wherein the at least one first p well includes an impurity region doped with p-type impurities having a doping concentration that increases in a vertically downward direction toward the substrate. - View Dependent Claims (2, 5, 6, 14)
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3. A semiconductor device, comprising:
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a substrate including a memory cell array region; a memory cell array on the memory cell array region, the memory cell array including; a channel layer extending in a vertical direction on the substrate, and at least one ground selection line, at least one word line, and at least one string selection line spaced apart in the vertical direction along a sidewall of the channel layer; and at least one first p well outside the memory cell array region on the substrate; at least one buried contact between the at least one first p well and the substrate; a second p well formed on the substrate, the second p well being disposed under the memory cell array; and a common source region on the substrate, the common source region including an impurity region doped with n-type impurities having a doping concentration that increases in a vertically downward direction toward the substrate, and wherein the common source region is disposed in the second p well. - View Dependent Claims (4)
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7. A semiconductor device, comprising:
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a semiconductor layer formed on a substrate, the semiconductor layer including a plurality of first p well regions and a second p well region; a memory cell array formed on the second p well region, the memory cell array including; a channel layer extending in a vertical direction on the semiconductor layer, and a ground selection line, a plurality of word lines and a string selection line spaced apart in the vertical direction along a sidewall of the channel layer; and a buried contact on the substrate, the buried contact being electrically connected to at least one first p well region of the plurality of first p well regions, and the buried contact vertically overlapping the at least one first p well region of the plurality of first p well regions, wherein the plurality of first p well regions is spaced apart from each other along an outer circumference of the second p well region. - View Dependent Claims (8, 9, 10, 11, 12, 13)
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Specification