Pixel structure and method of manufacturing a pixel structure
First Claim
1. A method of manufacturing a pixel structure comprising:
- forming a gate on a substrate;
forming a gate insulation layer on the substrate to cover the gate;
forming a source and a drain on the gate insulation layer, wherein the source and the drain both above the gate are separated by a gap such that the gate has at least a portion that is not overlapped with the source and the drain;
forming a semiconductor channel layer above the source and the drain, wherein the semiconductor channel layer is at least disposed in the gap;
forming a dielectric insulation layer on the substrate to cover the source, the drain and the semiconductor channel layer, wherein a dielectric index of the dielectric insulation layer is greater than a dielectric index of the gate insulation layer;
forming a capacitance electrode on the dielectric insulation layer, wherein the capacitance electrode is overlapped with the drain such that the capacitance electrode, the drain and the dielectric insulation layer sandwiched between the capacitance electrode and the drain constitute a storage capacitor structure, wherein the capacitance electrode is not overlapping with the gate and the source;
forming a protection layer on the dielectric insulation layer to cover the capacitance electrode; and
forming a pixel electrode on the protection layer and connected to the drain.
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Abstract
A pixel structure and a method of manufacturing a pixel structure are provided. The pixel structure includes an active device, a gate insulation layer, a dielectric insulation layer, a capacitance electrode, a protection layer and a pixel electrode. The active device includes a gate, a semiconductor channel layer, a source and a drain. The dielectric insulation layer covers the semiconductor channel layer. A dielectric index of the dielectric insulation layer is greater than a dielectric index of the gate insulation layer. The capacitance electrode is overlapped with the drain. The capacitance electrode, the drain and the dielectric insulation layer between the two constitute a storage capacitor structure. The protection layer is disposed on the dielectric insulation layer and the capacitance electrode is located between the protection layer and the dielectric insulation layer. The pixel electrode is disposed on the protection layer and connected to the drain of the active device.
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Citations
11 Claims
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1. A method of manufacturing a pixel structure comprising:
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forming a gate on a substrate; forming a gate insulation layer on the substrate to cover the gate; forming a source and a drain on the gate insulation layer, wherein the source and the drain both above the gate are separated by a gap such that the gate has at least a portion that is not overlapped with the source and the drain; forming a semiconductor channel layer above the source and the drain, wherein the semiconductor channel layer is at least disposed in the gap; forming a dielectric insulation layer on the substrate to cover the source, the drain and the semiconductor channel layer, wherein a dielectric index of the dielectric insulation layer is greater than a dielectric index of the gate insulation layer; forming a capacitance electrode on the dielectric insulation layer, wherein the capacitance electrode is overlapped with the drain such that the capacitance electrode, the drain and the dielectric insulation layer sandwiched between the capacitance electrode and the drain constitute a storage capacitor structure, wherein the capacitance electrode is not overlapping with the gate and the source; forming a protection layer on the dielectric insulation layer to cover the capacitance electrode; and forming a pixel electrode on the protection layer and connected to the drain. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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Specification