Semiconductor device comprising capacitor
First Claim
1. A semiconductor device comprising:
- a transistor comprising a gate electrode, a source electrode, a drain electrode, and a light-transmitting semiconductor film;
a light-transmitting conductive film on a surface where the light-transmitting semiconductor film is formed, wherein the light-transmitting conductive film functions as one of a pair of electrodes of a capacitor;
an insulating film over the light-transmitting conductive film, wherein the insulating film functions as a dielectric film of the capacitor;
a pixel electrode electrically connected to the transistor, wherein the pixel electrode functions as the other of the pair of electrodes of the capacitor;
a capacitor line on a surface where the gate electrode is formed;
an electrode on a surface where the pixel electrode is formed; and
a conductive film on a surface where the source electrode or the drain electrode is formed,wherein the capacitor line is electrically connected to the light-transmitting conductive film through the electrode and the conductive film,wherein the light-transmitting conductive film includes a region whose conductivity is higher than the conductivity of the light-transmitting semiconductor film,wherein the electrode and the conductive film are formed from at least one of different materials, andwherein the conductive film is in contact with a side surface of the light-transmitting conductive film.
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Accused Products
Abstract
A semiconductor device in which the aperture ratio and which includes a capacitor with increased charge capacity is provided. A semiconductor device in which the number of masks used in a manufacturing process is reduced and the manufacturing costs are reduced is also provided. An impurity is contained in a light-transmitting semiconductor film so that the semiconductor film functions as one of a pair of electrodes in a capacitor. The other pair of electrodes is formed using a light-transmitting conductive film such as a pixel electrode. Further, a scan line and a capacitor line are provided on the same surface and in parallel to each other. An opening reaching the capacitor line and an opening reaching a conductive film which can be formed in the formation of a source electrode or a drain electrode of the transistor can be formed concurrently in an insulating film.
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Citations
12 Claims
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1. A semiconductor device comprising:
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a transistor comprising a gate electrode, a source electrode, a drain electrode, and a light-transmitting semiconductor film; a light-transmitting conductive film on a surface where the light-transmitting semiconductor film is formed, wherein the light-transmitting conductive film functions as one of a pair of electrodes of a capacitor; an insulating film over the light-transmitting conductive film, wherein the insulating film functions as a dielectric film of the capacitor; a pixel electrode electrically connected to the transistor, wherein the pixel electrode functions as the other of the pair of electrodes of the capacitor; a capacitor line on a surface where the gate electrode is formed; an electrode on a surface where the pixel electrode is formed; and a conductive film on a surface where the source electrode or the drain electrode is formed, wherein the capacitor line is electrically connected to the light-transmitting conductive film through the electrode and the conductive film, wherein the light-transmitting conductive film includes a region whose conductivity is higher than the conductivity of the light-transmitting semiconductor film, wherein the electrode and the conductive film are formed from at least one of different materials, and wherein the conductive film is in contact with a side surface of the light-transmitting conductive film. - View Dependent Claims (2, 3, 4, 5, 11, 12)
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6. A semiconductor device comprising:
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a transistor comprising a gate electrode, a source electrode, a drain electrode, and a light-transmitting semiconductor film; an insulating film having a stacked structure of an oxide insulating film and a nitride insulating film over the oxide insulating film, wherein the insulating film is over the light-transmitting semiconductor film; a light-transmitting conductive film on a surface where the light-transmitting semiconductor film is formed, wherein the light-transmitting conductive film is in contact with the oxide insulating film and functions as one of a pair of electrodes of a capacitor; a pixel electrode electrically connected to the transistor, wherein the pixel electrode functions as the other of the pair of electrodes of the capacitor; a capacitor line on a surface where the gate electrode is formed; an electrode on a surface where the pixel electrode is formed; and a conductive film on a surface where the source electrode or the drain electrode is formed, wherein the nitride insulating film functions as a dielectric film of the capacitor, wherein the capacitor line is electrically connected to the light-transmitting conductive film through the electrode and the conductive film, wherein the light-transmitting conductive film includes a region whose conductivity is higher than the conductivity of the light-transmitting semiconductor film, wherein the electrode and the conductive film are formed from at least one of different materials, and wherein the conductive film is in contact with a side surface of the light-transmitting conductive film. - View Dependent Claims (7, 8, 9, 10)
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Specification