Semiconductor apparatus, method of manufacturing semiconductor apparatus, method of designing semiconductor apparatus, and electronic apparatus

• US 9,905,602 B2
• Filed: 10/26/2016
• Issued: 02/27/2018
• Est. Priority Date: 03/25/2010
• Status: Active Grant

• Current Assignee: Sony Corporation (Sony Group Corp.)
• Original Assignee: Sony Corporation (Sony Group Corp.)
• Inventors: Takahashi, Hiroshi, Sukegawa, Shunichi, Inoue, Keishi
• Primary Examiner(s): FOURSON III, GEORGE R
• Application Number:
  US15/335,320
• Publication Number:
  US 20170047369A1
• Time in Patent Office: 489 Days
• Field of Search: 257448
• CPC Class Codes: H01L 21/76802 by forming openings in dielectrics
• CPC Class Codes: H01L 21/76898 formed through a semiconductor substrate
• CPC Class Codes: H01L 2224/02166 Collar structures
• CPC Class Codes: H01L 2224/03 Manufacturing methods
• CPC Class Codes: H01L 2224/04042 Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
• CPC Class Codes: H01L 2224/08145 the bodies being stacked
• CPC Class Codes: H01L 2224/24147 the HDI interconnect not connecting to the same level of the lower semiconductor or solid-state body at which the upper semiconductor or solid-state body is mounted, e.g. the upper semiconductor or solid-state body being mounted in a cavity or on a protrusion of the lower semiconductor or solid-state body
• CPC Class Codes: H01L 2224/48463 the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
• CPC Class Codes: H01L 2224/80001 by connecting a bonding area directly to another bonding area, i.e. connectorless bonding, e.g. bumpless bonding
• CPC Class Codes: H01L 2224/80896 between electrically insulating surfaces, e.g. oxide or nitride layers
• CPC Class Codes: H01L 2224/82 by forming build-up interconnects at chip-level, e.g. for high density interconnects [HDI]
• CPC Class Codes: H01L 2224/8203 Reshaping, e.g. forming vias
• CPC Class Codes: H01L 2224/821 Forming a build-up interconnect
• CPC Class Codes: H01L 2224/9202 Forming additional connectors after the connecting process
• CPC Class Codes: H01L 2224/9212 Sequential connecting processes
• CPC Class Codes: H01L 23/481 Internal lead connections, e.g. via connections, feedthrough structures
• CPC Class Codes: H01L 23/5283 Cross-sectional geometry
• CPC Class Codes: H01L 23/535 including internal interconnections, e.g. cross-under constructions internal lead connections H01L23/481
• CPC Class Codes: H01L 24/05 of an individual bonding area
• CPC Class Codes: H01L 27/14621 Colour filter arrangements
• CPC Class Codes: H01L 27/14627 : Microlenses
• CPC Class Codes: H01L 27/14632 : Wafer-level processed structures
• CPC Class Codes: H01L 27/14634 : Assemblies, i.e. Hybrid structures
• CPC Class Codes: H01L 27/14636 : Interconnect structures
• CPC Class Codes: H01L 27/14638 : Structures specially adapted for transferring the charges across the imager perpendicular to the imaging plane
• CPC Class Codes: H01L 27/1464 : Back illuminated imager structures
• CPC Class Codes: H01L 27/14645 : Colour imagers
• CPC Class Codes: H01L 27/1469 : Assemblies, i.e. hybrid integration
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/12043 : Photo diode
• CPC Class Codes: H01L 2924/1306 : Field-effect transistor [FET]
• CPC Class Codes: H01L 2924/13091 : Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
• CPC Class Codes: H01L 2924/14 : Integrated circuits
• CPC Class Codes: H01L 2924/3025 : Electromagnetic shielding
• CPC Class Codes: H01L 31/02002 : Arrangements for conducting electric current to or from the device in operations
• CPC Class Codes: H01L 31/02008 : for solar cells or solar cell modules
• CPC Class Codes: H01L 31/02013 : comprising output lead wires elements
• CPC Class Codes: H04N 25/79 : Arrangements of circuitry being divided between different or multiple substrates, chips or circuit boards, e.g. stacked image sensors

Abstract

A semiconductor device including a first material layer adjacent to a second material layer, a first via passing through the first material layer and extending into the second material layer, and a second via extending into the first material layer, where along a common cross section parallel to an interface between the two material layers, the first via has a cross section larger than that of the second via.

Claims

1. A semiconductor device, comprising:

a first semiconductor chip including a plurality of photoelectric conversion elements and a first multi wiring layer;

a second semiconductor chip including a second multi wiring layer,

wherein the first semiconductor chip and the second semiconductor chip are bonded to each other with the first multi wiring layer facing the second multi wiring layer;

a connection conductor, wherein a wiring of the first multi layer wiring and a wiring of the second multi layer wiring electrically connect the first multi wiring layer to the second multi wiring layer through a first conductive portion and a second conductive portion, and wherein the second conductive portion comprises Cu and Al.

2. The semiconductor device of claim 1, further comprising:

a barrier metal layer within the second conductive portion.

3. The semiconductor device of claim 2, wherein the barrier metal layer comprises TiN.

4. The semiconductor device of claim 1, wherein a size of the second conductive portion is different from that of the first conductive portion.

5. The semiconductor device of claim 4,

wherein a diameter of the second conductive portion is different from a diameter of the first conductive portion.

6. The semiconductor device of claim 1,

wherein the second conductive portion has a diameter that is different than a diameter of the first conductive portion along a common cross section parallel to an interface between the first semiconductor chip and the second semiconductor chip.

7. The semiconductor device of claim 1,

wherein the device is a backside illuminated device.

8. The semiconductor device of claim 1, wherein the plurality of photoelectric conversion elements are arranged in a two-dimensional array.

9. The semiconductor device of claim 8, wherein the connection conductor is within an area of the two-dimensional array.

10. A semiconductor device, comprising:

a first semiconductor chip including a plurality of photoelectric conversion elements and a first multi wiring layer;

a second semiconductor chip including a second multi wiring layer,

wherein the first semiconductor chip and the second semiconductor chip are bonded to each other with the first multi wiring layer facing the second multi wiring layer;

a connection conductor, wherein the wiring of the first multi layer wiring and the wiring of the second multi layer wiring electrically connect the first multi wiring layer to the second multi wiring layer through a first conductive portion and a second conductive portion,

a bonding wire,

wherein the bonding wire connects an electrode pad portion to an external wiring, and

wherein the second conductive portion and the electrode pad portion comprise the same material.

11. The semiconductor device of claim 10, wherein the second conductive portion and the electrode pad portion comprise Al.

12. The semiconductor device of claim 10, wherein the second conductive portion and the electrode pad portion has a barrier metal layer.

13. The semiconductor device of claim 12, wherein the barrier metal layer comprises TiN.

14. The semiconductor device of claim 10, wherein a size of the second conductive portion is different from that of the first conductive portion.

15. The semiconductor device of claim 10,

wherein a diameter of the second conductive portion is different from a diameter of the first conductive portion.

16. The semiconductor device of claim 10,

wherein the second conductive portion has a diameter that is different than a diameter of the first conductive portion along a common cross section parallel to an interface between the first semiconductor chip and the second semiconductor chip.

17. The semiconductor device of claim 10,

wherein the device is a backside illuminated device.

18. The semiconductor device of claim 10, wherein the plurality of photoelectric conversion elements are arranged in a two-dimensional array.

19. The semiconductor device of claim 18, wherein the connection conductor is within an area of the two-dimensional array.