Thin film transistor, method of manufacturing the same, and display apparatus

• US 9,905,699 B2
• Filed: 11/26/2014
• Issued: 02/27/2018
• Est. Priority Date: 12/05/2006
• Status: Active Grant

• Current Assignee: Canon Kabushiki Kaisha (Canon Inc.)
• Original Assignee: Canon Kabushiki Kaisha (Canon Inc.)
• Inventors: Hayashi, Ryo, Kaji, Nobuyuki, Yabuta, Hisato
• Primary Examiner(s): CARPENTER, ROBERT K
• Application Number:
  US14/555,516
• Publication Number:
  US 20150084048A1
• Time in Patent Office: 1,189 Days
• Field of Search: None
• CPC Class Codes: H01L 27/1225 with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
• CPC Class Codes: H01L 29/66969 of devices having semiconductor bodies not comprising group 14 or group 13/15 materials comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials, comprising cuprous oxide or cuprous iodide H01L21/02365
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate

Abstract

Provided is a bottom gate type thin film transistor including on a substrate (1) a gate electrode (2), a first insulating film (3) as a gate insulating film, an oxide semiconductor layer (4) as a channel layer, a second insulating film (5) as a protective layer, a source electrode (6), and a drain electrode (7), in which the oxide semiconductor layer (4) includes an oxide including at least one selected from the group consisting of In, Zn, and Sn, and the second insulating film (5) includes an amorphous oxide insulator formed so as to be in contact with the oxide semiconductor layer (4) and contains therein 3.8×10¹⁹ molecules/cm³ or more of a desorbed gas observed as oxygen by temperature programmed desorption mass spectrometry.

Claims

1. A thin film transistor, comprising:

a gate electrode;

a first insulating film as a gate insulating film;

an oxide semiconductor film as a channel layer, said oxide semiconductor film comprising at least one of a Sn—

In—

Zn oxide, an In—

Zn—

Ga oxide, an In—

Sn oxide, an In—

Ga oxide, an In—

Zn oxide or an In oxide;

a second insulating film as a protective layer for protecting the channel layer; and

a source electrode and a drain electrode, wherein

a part of each of the source electrode and the drain electrode covers the oxide semiconductor film, and another part of each of the source electrode and the drain electrode covers the second insulating film, and

each of the first insulating film and the second insulating film includes a silicon oxide layer, and a film thickness of that part of the second insulating film which is covered with either of the source electrode and the drain electrode is not more than half of a film thickness of the first insulating film.

2. The thin film transistor according to claim 1, wherein the silicon oxide layer included in the second insulating film contacts the oxide semiconductor film.

3. An apparatus, comprising an electro-optical device having a pixel electrode;

and

the film transistor according to claim 1, wherein

the pixel electrode is connected to one of the source electrode and the drain electrode of the thin film transistor.

4. The apparatus according to claim 3, wherein the electro-optical device is an electroluminescence device.

5. The apparatus according to claim 3, wherein the electro-optical device is a liquid crystal cell.

6. The thin film transistor according to claim 1, wherein an on/off ratio of the thin film transistor is at least 10 ⁵.

7. The thin film transistor according to claim 1, wherein the second insulating film is formed in an atmosphere comprising an oxidizing gas.

8. The thin film transistor according to claim 1, wherein the silicon oxide layer included in the first insulating film contacts the oxide semiconductor film transistor.

9. The thin film transistor according to claim 1, wherein the source electrode and the drain electrode comprise metal.

10. A thin film transistor, comprising:

a gate electrode;

a first insulating film as a gate insulating film;

an oxide semiconductor film as a channel layer, said oxide semiconductor film comprising at least one of a Sn—

In—

Zn oxide, an In—

Zn—

Ga oxide, an In—

Sn oxide, an In—

Ga oxide, an In—

Zn oxide or an In oxide;

a second insulating film as a protective layer for protecting the channel layer; and

a source electrode and a drain electrode, wherein

a part of each of the source electrode and the drain electrode covers the oxide semiconductor film, and another part of each of the source electrode and the drain electrode covers the second insulating film, and

a film thickness of that part of the second insulating film which is covered with either of the source electrode and the drain electrode is not more than half of a film thickness of the first insulating film.

11. The thin film transistor according to claim 10, wherein the second insulating film comprises silicon oxide layer.

12. The thin film transistor according to claim 10, wherein the silicon oxide layer included in the second insulating film contacts the oxide semiconductor film.

13. The thin film transistor according to claim 10, wherein an on/off ratio of the thin film transistor is at least 10⁵.

14. The thin film transistor according to claim 10, wherein the second insulating film is formed in an atmosphere comprising an oxidizing gas.

15. The thin film transistor according to claim 10, wherein the first insulating film comprises silicon oxide layer.

16. The thin film transistor according to claim 10, wherein the silicon oxide layer included in the first insulating film contacts the oxide semiconductor film.

17. The thin film transistor according to claim 10, wherein the source electrode and the drain electrode comprise metal.

18. An apparatus, comprising an electro-optical device having a pixel electrode;

and

film transistor according to claim 10, wherein

the pixel electrode is connected to one of the source electrode and the drain electrode of the thin film transistor.

19. The apparatus according to claim 18, wherein the electro-optical device is an electroluminescence device.

20. The apparatus according to claim 18, wherein the electro-optical device is a liquid crystal cell.

21. A thin film transistor, comprising:

a gate electrode;

a first insulating film;

an oxide semiconductor film;

a second insulating film; and

a source electrode and a drain electrode, wherein

the first insulating film is provided between the oxide semiconductor film and the gate electrode,

the oxide semiconductor film is provided between the first insulating film and the second insulating film,

a part of each of the source electrode and the drain electrode covers the oxide semiconductor film, and another part of each of the source electrode and the drain electrode covers the second insulating film,

each of the first insulating film and the second insulating film includes a silicon oxide, and

a film thickness of that part of the second insulating film which is covered with either of the source electrode and the drain electrode is not more than half of a film thickness of the first insulating film.

22. The thin film transistor according to claim 21, wherein the second insulating film comprises silicon oxide layer.

23. The thin film transistor according to claim 21, wherein the silicon oxide layer included in the second insulating film contacts the oxide semiconductor film.

24. The thin film transistor according to claim 21, wherein an on/off ratio of the thin film transistor is at least 10⁵.

25. The thin film transistor according to claim 21, wherein the second insulating film is formed in an atmosphere comprising an oxidizing gas.

26. The thin film transistor according to claim 21, wherein the first insulating film comprises silicon oxide layer.

27. The thin film transistor according to claim 21, wherein the silicon oxide layer included in the first insulating film contacts the oxide semiconductor film.

28. The thin film transistor according to claim 21, wherein the source electrode and the drain electrode comprise metal.

29. An apparatus, comprising an electro-optical device having a pixel electrode;

and

the film transistor according to claim 21, wherein

the pixel electrode is connected to one of the source electrode and the drain electrode of the thin film transistor.

30. The apparatus according to claim 29, wherein the electro-optical device is an electroluminescence device.

31. The apparatus according to claim 29, wherein the electro-optical device is a liquid crystal cell.