High output group III nitride light emitting diodes
First Claim
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1. A light emitting diode comprising:
- a light emitting layer that comprises a Group III nitride material system;
a first ohmic contact on said light emitting layer;
a silver-based layer between said first ohmic contact and said light emitting layer, said silver-based layer including a first face of said silver-based layer adjacent said first ohmic contact, a second face of said silver-based layer adjacent and directly contacting said light emitting layer and a sidewall of said silver-based layer that extends between said first and second faces;
a barrier layer between said first ohmic contact layer and said silver-based layer and directly contacting said first ohmic contact layer, said barrier layer extending on said first face of said silver-based layer and further extending on said sidewall of said silver-based layer to directly contact said light emitting layer;
a transparent conductive substrate on said light emitting layer opposite said silver-based layer; and
a second ohmic contact directly on said transparent conductive substrate opposite said light emitting layer.
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Abstract
A light emitting diode is disclosed that includes a silicon carbide substrate and a light emitting structure formed from the Group III nitride material system on the substrate. The diode has an area greater than 100,000 square microns and has a radiant flux at 20 milliamps current of at least 29 milliwatts at its dominant wavelength between 390 and 540 nanometers.
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Citations
10 Claims
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1. A light emitting diode comprising:
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a light emitting layer that comprises a Group III nitride material system; a first ohmic contact on said light emitting layer; a silver-based layer between said first ohmic contact and said light emitting layer, said silver-based layer including a first face of said silver-based layer adjacent said first ohmic contact, a second face of said silver-based layer adjacent and directly contacting said light emitting layer and a sidewall of said silver-based layer that extends between said first and second faces; a barrier layer between said first ohmic contact layer and said silver-based layer and directly contacting said first ohmic contact layer, said barrier layer extending on said first face of said silver-based layer and further extending on said sidewall of said silver-based layer to directly contact said light emitting layer; a transparent conductive substrate on said light emitting layer opposite said silver-based layer; and a second ohmic contact directly on said transparent conductive substrate opposite said light emitting layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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Specification