Light-emitting device

• US 9,905,733 B2
• Filed: 03/30/2017
• Issued: 02/27/2018
• Est. Priority Date: 01/10/2013
• Status: Active Grant

• Current Assignee: Epistar Corporation
• Original Assignee: Epistar Corporation
• Inventors: Chen, Hong-Che, Shen, Chien-Fu, Chen, Chao-Hsing, Yang, Yu-Chen, Wang, Jia-Kuen, Lin, Chih-Nan
• Primary Examiner(s): Pham, Thanh V
• Application Number:
  US15/474,476
• Publication Number:
  US 20170207368A1
• Time in Patent Office: 334 Days
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48247 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/12044 OLED
• CPC Class Codes: H01L 33/20 with a particular shape, e.g. curved or truncated substrate
• CPC Class Codes: H01L 33/38 with a particular shape
• CPC Class Codes: H01L 33/40 Materials therefor
• CPC Class Codes: H01L 33/405 Reflective materials
• CPC Class Codes: H01L 33/48 characterised by the semiconductor body packages

Abstract

A light-emitting device comprises a light-emitting semiconductor stack comprising a plurality of recesses and a mesa, each of the plurality of recesses comprising a bottom surface, and the mesa comprising an upper surface; a first electrode formed on the upper surface of the mesa; a plurality of second electrodes respectively formed on the bottom surface of the plurality of recesses; a first electrode pad formed on the light-emitting semiconductor stack and contacting with the first electrode; a second electrode pad formed on the light-emitting semiconductor stack and contacting with the plurality of second electrode; a first insulating layer comprising a plurality of passages to expose the plurality of second electrodes; and a second insulating layer comprising a plurality of spaces and formed on the first insulating layer, wherein the plurality of spaces is covered by the first electrode pad.

Claims

1. A light-emitting device, comprising:

a light-emitting semiconductor stack comprising a plurality of recesses and a mesa, each of the plurality of recesses comprising a bottom surface, and the mesa comprising an upper surface;

a first insulating layer formed in the plurality of recesses and on the upper surface of the mesa;

a first electrode comprising a first layer formed on the upper surface of the mesa and a second layer formed on the first layer;

a plurality of second electrodes respectively formed on the bottom surface of the plurality of recesses;

a second insulating layer formed on the second layer of the first electrode and comprising one or multiple spaces exposing the second layer of the first electrode, wherein the first insulating layer comprises an opening exposing the first layer, the opening of the first insulating layer comprises a width larger than a width of the one or multiple spaces of the second insulating layer;

a first electrode pad formed on the light-emitting semiconductor stack and electrically connected to the first electrode; and

a second electrode pad formed on the light-emitting semiconductor stack and electrically connected to the plurality of second electrodes.

2. The light-emitting device according to claim 1, further comprising a substrate on the light-emitting semiconductor stack.

3. The light-emitting device according to claim 1, wherein the light-emitting semiconductor stack comprises a first conductive type semiconductor layer, an active layer on the first conductive type semiconductor layer, and a second conductive type semiconductor layer on the active layer, the plurality of recesses penetrates through the active layer.

4. The light-emitting device according to claim 3, wherein the bottom surface of the plurality of recesses exposes the first conductive type semiconductor layer, and the upper surface of the mesa is a surface of the second conductive type semiconductor layer.

5. The light-emitting device according to claim 1, wherein the first electrode pad is formed on the plurality of recesses.

6. The light-emitting device according to claim 1, wherein the first layer comprises a first conductive material and the second layer comprises a second conductive material different from the first conductive material.

7. The light-emitting device according to claim 6, wherein the first conductive material comprises a material comprising an element selected from the group consisting of Ag, Pt, and Au, and the second conductive material comprises a material comprising an element selected from a group consisting of Ni, Al, Cu, Cr, and Ti.

8. The light-emitting device according to claim 1, wherein the second insulating layer comprises a material different from that of the first insulating layer.

9. The light-emitting device according to claim 8, wherein a material of the second insulating layer comprises silicon oxide, silicon nitride, aluminum oxide, zirconium oxide, or titanium oxide.

10. The light-emitting device according to claim 1, wherein the second insulating layer is formed on the first insulating layer at a position overlapping a position of the first insulating layer.

11. The light-emitting device according to claim 1, wherein the second insulating layer is between the first electrode and the first electrode pad.

12. The light-emitting device according to claim 1, wherein the first electrode pad is formed on the second insulating layer and electrically connected to the first electrode through the one or multiple spaces.

13. The light-emitting device according to claim 1, wherein the first insulating layer is formed in each of the plurality of recesses and on a part of the upper surface of the mesa.

14. The light-emitting device according to claim 1, wherein the second insulating layer directly contacts the first insulating layer at an edge of the light-emitting device.

15. The light-emitting device according to claim 1, wherein the first insulating layer comprising a plurality of passages to expose the plurality of second electrodes, the second insulating layer comprises a plurality of openings formed under the second electrode pad.

16. The light-emitting device according to claim 15, wherein the second electrode pad is electrically connected to the plurality of second electrode through the plurality of openings of the second insulating layer and through the plurality of passages of the first insulating layer.

17. The light-emitting device according to claim 1, further comprising a conductive type contact layer formed on the second conductive type semiconductor layer, wherein the conductive type contact layer comprises indium tin oxide, cadmium tin oxide, antimony tin oxide, indium zinc oxide, aluminum zinc oxide, or zinc tin oxide.

18. The light-emitting device according to claim 1, wherein the multiple spaces are separated from each other.