Hinged MEMS diaphragm, and method of manufacture thereof

• US 9,906,869 B2
• Filed: 01/20/2017
• Issued: 02/27/2018
• Est. Priority Date: 10/01/2012
• Status: Active Grant

• Current Assignee: The Research Foundation for The State University of New York (State University of New York)
• Original Assignee: The Research Foundation for The State University of New York (State University of New York)
• Inventors: Miles, Ronald N., Cui, Weili
• Primary Examiner(s): AHMED, SELIM U
• Application Number:
  US15/411,575
• Publication Number:
  US 20170127189A1
• Time in Patent Office: 403 Days
• CPC Class Codes: B81B 2201/0257 Microphones or microspeakers
• CPC Class Codes: B81B 2201/042 Micromirrors, not used as optical switches
• CPC Class Codes: B81B 2203/0127 Diaphragms, i.e. structures separating two media that can control the passage from one medium to another; Membranes, i.e. diaphragms with filtering function
• CPC Class Codes: B81B 2207/053 of movable structures
• CPC Class Codes: B81B 3/0027 Structures for transforming mechanical energy, e.g. potential energy of a spring into translation, sound into translation
• CPC Class Codes: B81B 3/007 For controlling stiffness, e.g. ribs
• CPC Class Codes: B81C 1/00595 Control etch selectivity
• CPC Class Codes: H04R 19/04 Microphones H04R19/01 takes precedence
• CPC Class Codes: H04R 2201/003 Mems transducers or their use of the electrostatic type H04R19/005
• CPC Class Codes: H04R 2307/025 Diaphragms comprising polymeric materials

Abstract

A method of forming a micromechanical structure comprising, forming a sacrificial layer on a surface and walls of a trench in a substrate; depositing a structural layer over the sacrificial layer, extending into the trench, selectively etching the structural layer to define a pattern having a boundary, at least a portion of the structural layer overlying a respective portion of the trench being removed and at least a portion of the structural layer extending into the trench being preserved at the boundary; and removing at least a portion of the sacrificial layer from underneath the structural layer, prior to removal of at least a portion of the sacrificial layer extending into the trench at the structural boundary. A micromechanical structure formed by the method is also provided.

Claims

1. A method of forming a micromechanical structure, comprising:

forming a sacrificial layer on a surface of a substrate and walls of at least two trenches formed in the substrate, the at least two trenches having respectively different depths;

depositing a structural layer over the sacrificial layer, extending into the at least two trenches, the structural layer having a different residual compressive stress than the sacrificial layer;

selectively etching the structural layer to define a pattern having a boundary, at least a portion of the structural layer overlying a respective portion of the at least one of the at least two trenches being removed and at least a portion of the structural layer extending into the at least one of the at least two trenches being preserved at the boundary; and

removing the sacrificial layer from underneath the structural layer, and a portion of the sacrificial layer extending into a shallower depth of one of the at least two trenches, prior to removal of the sacrificial layer extending into a deeper depth of one of the at least two trenches at the structural boundary.

2. The method according to claim 1, wherein the pattern having a boundary defines a structural layer plate suspended by the at least a portion of the structural layer extending into the deeper depth of one of the at least two trenches from the substrate.

3. The method according to claim 1, wherein the at least two trenches comprise a set of three trenches, of which a trench having a deeper depth is located between two trenches each having a shallower depth, each of the set of three trenches being removed and at least a portion of the structural layer extending into the set of three trenches being preserved at the boundary.

4. The method according to claim 1, further comprising etching through the substrate to expose a portion of the sacrificial layer underneath a portion of the structural layer, prior to removing the portion of the sacrificial layer from underneath the portion of the structural layer, to expose the portion of the structural layer.

5. The method according to claim 1, wherein the different residual compressive stress causes a flexure of a bilayer comprising the structural layer and the sacrificial layer.

6. The method according to claim 1, wherein the at least a portion of the sacrificial layer extending into the deeper of the at least two trenches at the structural boundary which is removed after at least a portion of the sacrificial layer from underneath the structural layer acts to alleviate a concentration of stress on the at least a portion of the structural layer extending into the shallower of the at least two trenches at the structural boundary prior to completion of removal the at least a portion of the sacrificial layer from underneath the structural layer.

7. The method according to claim 6, wherein the at least a portion of the structural layer extending into the deeper of the at least two trenches at the structural boundary comprises a flexural hinge.

8. The method according to claim 6, wherein the at least a portion of the structural layer extending into the shallower of the at least two trenches at the structural boundary comprises a rib configured to be displaceable along an axis normal to the surface of the substrate.

9. The method according to claim 1, wherein the substrate is a silicon wafer, the sacrificial layer comprises silicon dioxide formed by oxidizing a surface of the silicon wafer, and the structural layer comprises a layer of polysilicon deposited on the sacrificial layer.

10. The method according to claim 1, wherein the at least a portion of the structural layer extending into a plurality of trenches having a common depth at the structural boundary comprise an interdigital transducer.

11. The method according to claim 1, wherein the pattern having a boundary defines a diaphragm of a microphone.

12. The method according to claim 1, wherein the pattern having a boundary defines a micromirror device.

13. A method of forming a micromechanical structure, comprising:

providing a substrate having a surface and a trench formed into the surface;

chemically converting an exposed portion of the substrate comprising the surface and the trench formed into the surface to a sacrificial material;

depositing a layer of structural material over the sacrificial material, wherein the deposited layer of structural material extends into the sacrificial material in the trench;

patterning the layer of structural material to expose portions of the sacrificial layer, said patterning retaining a portion of the deposited layer of structural material which extends into the sacrificial material in the trench under a removed portion of the structural material;

etching the substrate to expose a portion of the sacrificial material under the structural material not extending into the trench;

selectively etching the sacrificial material not extending into the trench before etching at least a portion of the sacrificial material extending in the trench, such that the structural material extending into the trench counters flexure of adjacent layers of the structural material and the sacrificial material, having respectively different residual stresses, and a remaining portion of the sacrificial material the tethers a suspended portion of the structural material over an opening formed in the substrate to a surrounding portion of the substrate,

wherein the trench comprises at least two trenches, having different depths, the method further comprising removing at least the sacrificial material from a trench having a shallower depth prior to removal of at least a portion of the sacrificial material from a trench having a deeper depth.

14. The method according to claim 13, wherein the at least two trenches comprise a set of three trenches, with a trench having a deeper depth straddled by a pair of trenches having a shallower depth.

15. The method according to claim 13, wherein the structural material extending into a deeper trench of the at least two trenches forms a flexural hinge.

16. The method according to claim 13, wherein the structural material extending into the trench having the shallower depth of the at least two trenches comprises a rib configured to be displaceable along an axis normal to the surface of the substrate into which the respective trench extends.

17. The method according to claim 13, wherein the substrate comprises a silicon wafer, the sacrificial material comprises silicon dioxide formed by oxidizing a surface of the silicon wafer, and the structural material comprises a layer of polysilicon deposited on the sacrificial material.

18. The method according to claim 13, wherein the patterned layer of structural material defines a plate having a set of peripheral interdigital fingers.

19. The method according to claim 18, wherein the patterned layer of structural material defines a microphone diaphragm.