Lateral/vertical transistor structures and process of making and using same
First Claim
1. A microfluidic device, comprising:
- an enclosure having a microfluidic structure and a base,wherein the base comprises a common electrical conductor,wherein the microfluidic structure and an outer surface of the base together define a flow path within the enclosure, andwherein the base comprises an array of transistor structures, each said transistor structure in the array comprising a lateral bipolar transistor connecting a corresponding region of the outer surface of the base to the common conductor,wherein each said transistor structure in the array comprises a collector region, a base region, and an emitter region,wherein the base region surrounds the emitter region,wherein the collector region surrounds the base region,wherein the base region has a lateral width that is between about 10 nm and about 400 nm,wherein each said transistor structure in the array is physically separated from adjacent transistor structures in the array by trenches, andwherein an electrically insulative material is disposed in the trenches.
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Accused Products
Abstract
A microfluidic device can include a base an outer surface of which forms one or more enclosures for containing a fluidic medium. The base can include an array of individually controllable transistor structures each of which can comprise both a lateral transistor and a vertical transistor. The transistor structures can be light activated, and the lateral and vertical transistors can thus be photo transistors. Each transistor structure can be activated to create a temporary electrical connection from a region of the outer surface of the base (and thus fluidic medium in the enclosure) to a common electrical conductor. The temporary electrical connection can induce a localized electrokinetic force generally at the region, which can be sufficiently strong to move a nearby micro-object in the enclosure.
39 Citations
31 Claims
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1. A microfluidic device, comprising:
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an enclosure having a microfluidic structure and a base, wherein the base comprises a common electrical conductor, wherein the microfluidic structure and an outer surface of the base together define a flow path within the enclosure, and wherein the base comprises an array of transistor structures, each said transistor structure in the array comprising a lateral bipolar transistor connecting a corresponding region of the outer surface of the base to the common conductor, wherein each said transistor structure in the array comprises a collector region, a base region, and an emitter region, wherein the base region surrounds the emitter region, wherein the collector region surrounds the base region, wherein the base region has a lateral width that is between about 10 nm and about 400 nm, wherein each said transistor structure in the array is physically separated from adjacent transistor structures in the array by trenches, and wherein an electrically insulative material is disposed in the trenches. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 31)
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Specification