Method for depositing dielectric film in trenches by PEALD

• US 9,909,214 B2
• Filed: 10/15/2015
• Issued: 03/06/2018
• Est. Priority Date: 10/15/2015
• Status: Active Grant

• Current Assignee: ASM IP Holding B.V. (ASM International NV)
• Original Assignee: ASM IP Holding B.V. (ASM International NV)
• Inventors: Suemori, Hidemi
• Primary Examiner(s): PHAM, THOMAS T
• Application Number:
  US14/884,695
• Publication Number:
  US 20170107621A1
• Time in Patent Office: 873 Days
• Field of Search: 216 67
• CPC Class Codes: C23C 16/045 Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
• CPC Class Codes: C23C 16/405 of refractory metals or yttrium
• CPC Class Codes: C23C 16/45542 Plasma being used non-continuously during the ALD reactions
• CPC Class Codes: C23C 16/45561 Gas plumbing upstream of the reaction chamber
• CPC Class Codes: C23C 16/50 using electric discharges generation and control of plasma in discharge tubes for surface treatment H01J37/32, H01J37/34
• CPC Class Codes: C23C 16/52 Controlling or regulating the coating process C23C16/45557, C23C16/279 take precedence
• CPC Class Codes: H01J 2237/3321 CVD [Chemical Vapor Deposition]
• CPC Class Codes: H01J 2237/334 Etching
• CPC Class Codes: H01J 37/32009 Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources plasma generation in general H05H1/24
• CPC Class Codes: H01J 37/32082 Radio frequency generated discharge H01J37/32357, H01J37/32366, H01J37/32394 and H01J37/32403 take precedence

Abstract

A method for depositing a dielectric film in a trench by plasma-enhanced atomic layer deposition (PEALD) includes depositing a dielectric film in a trench of a substrate by PEALD under conditions wherein the wet etch rate of the depositing film on a top surface of the substrate is substantially equivalent to or higher than the wet etch rate of the depositing film at a sidewall of the trench, wherein a precursor fed into the reaction space has —N(CH₃)₂ as a functional group.

Claims

1. A method for depositing a dielectric film in a trench by plasma-enhanced atomic layer deposition (PEALD), comprising:

(i) (a) obtaining multiple substrates on each of which a dielectric film is formed in a trench of each substrate in a reaction space by PEALD under deposition conditions wherein RF power varies as a sole variable in RF power application for the respective substrates, said trench being a recess from a top surface of the substrate and having a bottom and a sidewall connecting the top surface and the bottom;

(b) subjecting the multiple substrates to wet etching of the dielectric films formed thereon under common etching conditions for etching the dielectric films; and

(c) obtaining a first standard curve representing a first relationship between RF power applied to the reaction space and a wet etch rate of a part of the film, at a given location of interest, deposited on the sidewall of the trench as measured under wet etching conditions where an etching solution is a hydrofluoric acid diluted at 1;

100, a temperature is 17°

C., a sample size is 5×

5 cm, and an etching time is 5 minutes, and a second standard curve representing a second relationship between the RF power and a wet etch rate of a part of the film deposited on the top surface of the substrate as measured under the wet etching conditions, wherein a precursor fed into the reaction space has —

N(CH₃)₂ as a functional group, said PEALD being conducted under deposition conditions wherein the RF power is used as a sole variable in a range such that the first standard curve and the second standard curve intersect;

(ii) selecting RF power which corresponds to a first wet etch rate of the part of the film deposited on the sidewall of the trench and a second wet etch rate of the part of the film deposited on the top surface of the substrate where the second wet etch rate is more than 90% of the first wet etch rate based on the first and second standard curves obtained in step (i); and

(iii) depositing a dielectric film in a trench of a substrate by PEALD under the deposition conditions used in step (i) where RF power is the one determined in step (ii).

2. The method according to claim 1, wherein the RF power used in step (iii) is selected such that the second wet etch rate is equal to the first wet etch rate according to the first and second relationships in step (i).

3. The method according to claim 1, wherein the precursor is a dimethylamido metal complex.

4. The method according to claim 3, wherein the metal in the metal complex is titanium.

5. The method according to claim 1, wherein RF power used in step (iii) is in a range of about 0.07 W/cm³ to about 0.7 W/cm³ per area of the substrate.

6. The method according to claim 1, wherein the trench has a depth of about 100 nm to about 500 nm and an aspect ratio of about 1 to about 5.

7. The method according to claim 1, wherein the dielectric film deposited in step (iii) has a thickness of about 10 nm to about 100 nm.

8. The method according to claim 1, further comprising (iv) etching the dielectric film deposited in step (iii).

9. The method according to claim 8, wherein the dielectric film deposited in step (iii) has a first conformality and the dielectric film etched in step (iv) has a second conformality, wherein the second conformality is higher than the first conformality.

10. The method according to claim 9, wherein the second conformality is about 90% to about 110%.

11. A method for depositing a dielectric film in a trench of a substrate by plasma-enhanced atomic layer deposition (PEALD), said trench being a recess from a top surface of the substrate and having a bottom and a sidewall connecting the top surface and the bottom, said method comprising depositing an initial dielectric film in the trench of the substrate, followed by wet etching the initial dielectric film,

wherein the step of depositing the initial dielectric film is conducted by PEALD under conditions wherein RF power is a sole variable in RF power application and selected in a range of about 0.07 W/cm³ to about 0.7 W/cm³ per area of the substrate such that a wet etch rate of the depositing film on the top surface of the substrate is more than 90% of a wet etch rate of the depositing film at a given location of interest of the sidewall of the trench as measured under etching conditions where an etching solution is a hydrofluoric acid diluted at 1:

100, a temperature is 17°

C., a sample size is 5×

5 cm, and an etching time is 5 minutes, wherein a precursor fed into the reaction space has —

N(CH₃)₂ as a functional group.