Method of laser irradiation, laser irradiation apparatus, and method of manufacturing a semiconductor device
First Claim
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1. A method of manufacturing a semiconductor device comprising:
- homogenizing an energy distribution of a laser beam along a first direction perpendicular to a propagation direction of the laser beam by utilizing at least a first cylindrical lens array and a second cylindrical lens array;
homogenizing an energy distribution of the laser beam along a second direction perpendicular to the propagation direction of the laser beam by utilizing at least a third cylindrical lens array and a fourth cylindrical lens array, wherein the second direction is perpendicular to the first direction;
condensing the laser beam along a third direction perpendicular the first direction by utilizing at least a doublet cylindrical lens;
irradiating a semiconductor film comprising amorphous silicon with the condensed laser beam to crystallize the semiconductor film; and
patterning the crystallized semiconductor film into a plurality of semiconductor layers, wherein each of the first cylindrical lens array and the second cylindrical lens array has a longitudinal direction along the second direction, andwherein each of the third cylindrical lens array and the fourth cylindrical lens array has a longitudinal direction along the first direction.
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Abstract
If an optical path length of an optical system is reduced and a length of a laser light on an irradiation surface is increased, there occurs curvature of field which is a phenomenon that a convergent position deviates depending on an incident angle or incident position of a laser light with respect to a lens. To avoid this phenomenon, an optical element having a negative power such as a concave lens or a concave cylindrical lens is inserted to regulate the optical path length of the laser light and a convergent position is made coincident with a irradiation surface to form an image on the irradiation surface.
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Citations
6 Claims
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1. A method of manufacturing a semiconductor device comprising:
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homogenizing an energy distribution of a laser beam along a first direction perpendicular to a propagation direction of the laser beam by utilizing at least a first cylindrical lens array and a second cylindrical lens array; homogenizing an energy distribution of the laser beam along a second direction perpendicular to the propagation direction of the laser beam by utilizing at least a third cylindrical lens array and a fourth cylindrical lens array, wherein the second direction is perpendicular to the first direction; condensing the laser beam along a third direction perpendicular the first direction by utilizing at least a doublet cylindrical lens; irradiating a semiconductor film comprising amorphous silicon with the condensed laser beam to crystallize the semiconductor film; and patterning the crystallized semiconductor film into a plurality of semiconductor layers, wherein each of the first cylindrical lens array and the second cylindrical lens array has a longitudinal direction along the second direction, and wherein each of the third cylindrical lens array and the fourth cylindrical lens array has a longitudinal direction along the first direction. - View Dependent Claims (2, 3)
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4. A method of manufacturing a semiconductor device comprising:
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homogenizing an energy distribution of a laser beam along a first direction perpendicular to a propagation direction of the laser beam by utilizing at least a first cylindrical lens array, a second cylindrical lens array and a first cylindrical lens; homogenizing an energy distribution of the laser beam along a second direction perpendicular to the propagation direction of the laser beam by utilizing at least a third cylindrical lens array, a fourth cylindrical lens array and a second cylindrical lens, wherein the second direction is perpendicular to the first direction; condensing the laser beam along a third direction perpendicular the first direction by utilizing at least a doublet cylindrical lens; irradiating a semiconductor film comprising amorphous silicon with the condensed laser beam to crystallize the semiconductor film; and patterning the crystallized semiconductor film into a plurality of semiconductor layers, wherein each of the first cylindrical lens array and the second cylindrical lens array has a longitudinal direction along the second direction, and wherein each of the third cylindrical lens array and the fourth cylindrical lens array has a longitudinal direction along the first direction. - View Dependent Claims (5, 6)
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Specification