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Ultra-responsive phase shifters for depletion mode silcon modulators

  • US 9,910,302 B2
  • Filed: 04/07/2017
  • Issued: 03/06/2018
  • Est. Priority Date: 05/14/2013
  • Status: Active Grant
First Claim
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1. An optical modulator semiconductor device comprising:

  • a substrate;

    an optical waveguide disposed upon the substrate;

    a p-′

    type region of semiconductor material disposed within the optical waveguide, the p-type region having a p-′

    type contact terminal;

    an n-_type region of semiconductor material disposed within the optical waveguide, the n-type region having an n-type contact terminal;

    wherein the n-type region and the p-′

    type region share a non-planar junction interface that is shaped so as to enhance an overlap between an optical mode in the optical waveguide and the junction interface when the optical modulator semiconductor device is operational;

    wherein the n-type region and the p-type region are configured to comprise at least one of a PNP structure or an NPN structure as viewed in a direction perpendicular to the substrate, and wherein the optical waveguide includes one or more N and P implantation overlap regions comprising at least a portion of the non-planar junction interface.

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