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Selective growth of silicon nitride

  • US 9,911,595 B1
  • Filed: 03/17/2017
  • Issued: 03/06/2018
  • Est. Priority Date: 03/17/2017
  • Status: Active Grant
First Claim
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1. A method of depositing silicon nitride on a semiconductor substrate, the method comprising:

  • providing the semiconductor substrate having an exposed silicon oxide surface and an exposed silicon surface;

    exposing the semiconductor substrate to a blocking reagent to block one of the exposed silicon oxide surface and the exposed silicon surface by forming an organic moiety on the one of the exposed silicon oxide surface and the exposed silicon surface while the other of the exposed silicon oxide surface and the exposed silicon surface remains unblocked; and

    selectively depositing silicon nitride on the other of the exposed silicon oxide surface and the exposed silicon surface by one or more thermal atomic layer deposition cycles, each cycle comprising;

    exposing the semiconductor substrate having the blocked and unblocked surfaces to a silicon-containing precursor to adsorb the silicon-containing precursor to the unblocked surface; and

    exposing the semiconductor substrate to a nitrogen-containing reactant without igniting a plasma to form silicon nitride selectively on the unblocked surface relative to the blocked surface.

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