Semiconductor device including transistor and capacitor
First Claim
1. A semiconductor device comprising:
- a transistor, the transistor including;
a first insulating film;
an oxide semiconductor film over the first insulating film; and
a gate electrode adjacent to the oxide semiconductor film;
a capacitor, the capacitor including;
a first light-transmitting conductive film over the first insulating film;
a nitride insulating film over the first light-transmitting conductive film; and
a second light-transmitting conductive film over the nitride insulating film; and
an oxide insulating film over the oxide semiconductor film, the gate electrode, and the first light-transmitting conductive film,wherein the nitride insulating film is positioned over the oxide insulating film and is in contact with the first light-transmitting conductive film,wherein the second light-transmitting conductive film is electrically connected to the oxide semiconductor film through an opening of the oxide insulating film and an opening of the nitride film, andwherein a width of the opening of the oxide insulating film is larger than a width of the opening of the nitride insulating film.
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Accused Products
Abstract
A semiconductor device includes a transistor including an insulating film, an oxide semiconductor film, a gate electrode overlapping with the oxide semiconductor film, and a pair of electrodes in contact with the oxide semiconductor film; a capacitor including a first light-transmitting conductive film over the insulating film, a dielectric film over the first light-transmitting conductive film, and a second light-transmitting conductive film over the dielectric film; an oxide insulating film over the pair of electrodes of the transistor; and a nitride insulating film over the oxide insulating film. The dielectric film is the nitride insulating film, the oxide insulating film has a first opening over one of the pair of electrodes, the nitride insulating film has a second opening over the one of the pair of electrodes, and the second opening is on an inner side than the first opening.
249 Citations
24 Claims
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1. A semiconductor device comprising:
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a transistor, the transistor including; a first insulating film; an oxide semiconductor film over the first insulating film; and a gate electrode adjacent to the oxide semiconductor film; a capacitor, the capacitor including; a first light-transmitting conductive film over the first insulating film; a nitride insulating film over the first light-transmitting conductive film; and a second light-transmitting conductive film over the nitride insulating film; and an oxide insulating film over the oxide semiconductor film, the gate electrode, and the first light-transmitting conductive film, wherein the nitride insulating film is positioned over the oxide insulating film and is in contact with the first light-transmitting conductive film, wherein the second light-transmitting conductive film is electrically connected to the oxide semiconductor film through an opening of the oxide insulating film and an opening of the nitride film, and wherein a width of the opening of the oxide insulating film is larger than a width of the opening of the nitride insulating film. - View Dependent Claims (2, 3, 4, 5)
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6. A semiconductor device comprising:
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a transistor, the transistor including; a gate electrode; an insulating film over the gate electrode; an oxide semiconductor film over the insulating film; and a pair of electrodes in contact with the oxide semiconductor film; a capacitor, the capacitor including; a first light-transmitting conductive film over the insulating film; a dielectric film over the first light-transmitting conductive film; and a second light-transmitting conductive film over the dielectric film; an oxide insulating film over the pair of electrodes of the transistor; and a nitride insulating film over the oxide insulating film, wherein the dielectric film included in the capacitor is the nitride insulating film, wherein the oxide insulating film has a first opening over each of one of the pair of electrodes and the first light-transmitting conductive film, wherein the nitride insulating film has a second opening over the one of the pair of electrodes, wherein the second opening is on an inner side than the first opening over the one of the pair of electrodes, and wherein the second light-transmitting conductive film included in the capacitor is connected to the one of the pair of electrodes included in the transistor in the second opening over the one of the pair of electrodes. - View Dependent Claims (7, 8, 9, 10, 11, 12, 13)
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14. A semiconductor device comprising:
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a transistor, the transistor including; a gate electrode; an insulating film over the gate electrode; an oxide semiconductor film over the insulating film; and a pair of electrodes in contact with the oxide semiconductor film; a capacitor, the capacitor including; a first light-transmitting conductive film over the insulating film; a dielectric film over the first light-transmitting conductive film; and a second light-transmitting conductive film over the dielectric film; an oxide insulating film over the pair of electrodes of the transistor; and a nitride insulating film over the oxide insulating film, wherein the dielectric film included in the capacitor is the nitride insulating film, wherein the second light-transmitting conductive film included in the capacitor is connected to one of the pair of electrodes included in the transistor, wherein a hydrogen concentration of the oxide semiconductor film is different from a hydrogen concentration of the first light-transmitting conductive film, wherein the second light-transmitting conductive film is electrically connected to the oxide semiconductor film through an opening of the oxide insulating film and an opening of the nitride insulating film, and wherein a width of the opening of the oxide insulating film is larger than a width of the opening of the nitride film. - View Dependent Claims (15, 16, 17, 18, 19, 20, 21, 22)
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23. A semiconductor device comprising:
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a gate electrode; an insulating film over the gate electrode; an oxide semiconductor film over the insulating film; a conductive film of an oxide over the insulating film; a first conductive film over and electrically connected to the oxide semiconductor film; a second conductive film over and electrically connected to the oxide semiconductor film; an oxide insulating film over the oxide semiconductor film, the conductive film of the oxide, the first conductive film and the second conductive film; a nitride insulating film over the oxide insulating film; and a third conductive film over the nitride insulating film, wherein the conductive film of the oxide, the nitride insulating film and the third conductive film form a capacitor, wherein the nitride insulating film is in contact with the conductive film of the oxide, wherein the third conductive film is electrically connected to the second conductive film through an opening of the oxide insulating film and an opening of the nitride insulating film, and wherein the nitride insulating film is in contact with the second conductive film in the opening of the oxide insulating film. - View Dependent Claims (24)
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Specification