Semiconductor device including transistor and electronic device surrounded by layer having assigned band gap to prevent electrostatic discharge damage

• US 9,911,756 B2
• Filed: 08/24/2016
• Issued: 03/06/2018
• Est. Priority Date: 08/31/2015
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Yamazaki, Shunpei, Kato, Kiyoshi, Yakubo, Yuto, Nagatsuka, Shuhei
• Primary Examiner(s): Pham, Thanh V
• Application Number:
  US15/245,310
• Publication Number:
  US 20170062482A1
• Time in Patent Office: 559 Days
• CPC Class Codes: H01L 2223/54453 for use prior to dicing
• CPC Class Codes: H01L 23/544 Marks applied to semiconductor devices or parts, e.g. registration marks, alignment structures, wafer maps test patterns for characterising or monitoring manufacturing processes H01L22/00
• CPC Class Codes: H01L 27/1207 combined with devices in contact with the semiconductor body, i.e. bulk/SOI hybrid circuits
• CPC Class Codes: H01L 27/1225 with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
• CPC Class Codes: H01L 27/1259 Multistep manufacturing methods
• CPC Class Codes: H01L 29/66969 of devices having semiconductor bodies not comprising group 14 or group 13/15 materials comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials, comprising cuprous oxide or cuprous iodide H01L21/02365
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate

Abstract

To provide a semiconductor device that is not easily damaged by ESD in a manufacturing process thereof. A layer whose band gap is greater than or equal to 2.5 eV and less than or equal to 4.2 eV, preferably greater than or equal to 2.7 eV and less than or equal to 3.5 eV is provided to overlap with a dicing line. A layer whose band gap is greater than or equal to 2.5 eV and less than or equal to 4.2 eV, preferably greater than or equal to 2.7 eV and less than or equal to 3.5 eV is provided around the semiconductor device such as a transistor. The layer may be in a floating state or may be supplied with a specific potential.

Claims

1. A semiconductor device comprising:

a circuit region; and

a first layer,

wherein the circuit region is surrounded by the first layer, and

wherein a band gap of the first layer is greater than or equal to 2.5 eV and less than or equal to 4.2 eV.

2. The semiconductor device according to claim 1,

wherein the first layer comprises an oxide semiconductor.

3. The semiconductor device according to claim 1,

wherein the circuit region includes a first transistor.

4. The semiconductor device according to claim 3,

wherein the first layer and a semiconductor layer included in the first transistor are in contact with a second layer.

5. The semiconductor device according to claim 4,

wherein the circuit region includes a second transistor, and

wherein a band gap of the semiconductor layer of the first transistor is different from a band gap of a semiconductor layer of the second transistor.

6. An electronic device comprising:

the semiconductor device according to claim 1; and

a display portion, a power storage device, an operation key, a microphone, or a speaker.

7. A semiconductor device comprising:

a transistor; and

a first layer,

wherein the transistor is surrounded by the first layer, and

wherein a band gap of the first layer is greater than or equal to 2.5 eV and less than or equal to 4.2 eV.

8. The semiconductor device according to claim 7,

wherein the first layer comprises an oxide semiconductor.

9. The semiconductor device according to claim 7,

wherein the first layer and a semiconductor layer included in the transistor are in contact with a second layer.

10. An electronic device comprising:

the semiconductor device according to claim 7; and

a display portion, a power storage device, an operation key, a microphone, or a speaker.

11. A semiconductor device comprising:

a circuit region; and

an oxide semiconductor layer,

wherein the circuit region is surrounded by the oxide semiconductor layer, and

wherein a band gap of the oxide semiconductor layer is greater than or equal to 2.5 eV and less than or equal to 4.2 eV.

12. The semiconductor device according to claim 11,

wherein the circuit region includes a first transistor.

13. The semiconductor device according to claim 12,

wherein the oxide semiconductor layer and a semiconductor layer included in the first transistor are in contact with a first layer.

14. The semiconductor device according to claim 13,

wherein the circuit region includes a second transistor, and

wherein a band gap of the semiconductor layer of the first transistor is different from a band gap of a semiconductor layer of the second transistor.

15. An electronic device comprising:

the semiconductor device according to claim 11; and

a display portion, a power storage device, an operation key, a microphone, or a speaker.