Manufacturing method of semiconductor device comprising oxide semiconductor
First Claim
1. A method for manufacturing a semiconductor device, comprising the steps of:
- forming an oxide semiconductor film;
forming a gate insulating film over the oxide semiconductor film;
adding oxygen to the oxide semiconductor film;
forming a gate electrode layer over the gate insulating film;
forming an insulating film over the gate electrode layer; and
heating the oxide semiconductor film after forming the insulating film.
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Accused Products
Abstract
A semiconductor device using an oxide semiconductor is provided with stable electric characteristics to improve the reliability. In a manufacturing process of a transistor including an oxide semiconductor film, an oxide semiconductor film containing a crystal having a c-axis which is substantially perpendicular to a top surface thereof (also called a first crystalline oxide semiconductor film) is formed; oxygen is added to the oxide semiconductor film to amorphize at least part of the oxide semiconductor film, so that an amorphous oxide semiconductor film containing an excess of oxygen is formed; an aluminum oxide film is formed over the amorphous oxide semiconductor film; and heat treatment is performed thereon to crystallize at least part of the amorphous oxide semiconductor film, so that an oxide semiconductor film containing a crystal having a c-axis which is substantially perpendicular to a top surface thereof (also called a second crystalline oxide semiconductor film) is formed.
148 Citations
15 Claims
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1. A method for manufacturing a semiconductor device, comprising the steps of:
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forming an oxide semiconductor film; forming a gate insulating film over the oxide semiconductor film; adding oxygen to the oxide semiconductor film; forming a gate electrode layer over the gate insulating film; forming an insulating film over the gate electrode layer; and heating the oxide semiconductor film after forming the insulating film. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A method for manufacturing a semiconductor device, comprising the steps of:
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forming a first oxide semiconductor film; forming a gate insulating film over the first oxide semiconductor film; adding oxygen to the first oxide semiconductor film to form a second oxide semiconductor film; forming a gate electrode layer over the gate insulating film; forming an insulating film over the gate electrode layer; and heating the second oxide semiconductor film after forming the insulating film to form a third oxide semiconductor film, wherein each of a crystallinity of the first oxide semiconductor film and a crystallinity of the third oxide semiconductor film is higher than a crystallinity of the second oxide semiconductor film. - View Dependent Claims (9, 10, 11, 12, 13, 14)
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15. A method for manufacturing a semiconductor device, comprising the steps of:
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forming an oxide semiconductor film containing In, Ga, and Zn over a substrate; performing a first heat treatment after forming the oxide semiconductor film; forming a gate insulating film over the oxide semiconductor film after performing the first heat treatment; adding oxygen to the oxide semiconductor film after forming the gate insulating film; forming a gate electrode layer over the gate insulating film after adding the oxygen to the oxide semiconductor film; forming an insulating film containing aluminum oxide over the gate insulating film and the gate electrode layer after forming the gate electrode layer; and performing a second heat treatment after forming the insulating film.
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Specification