Photosensitive imaging devices and associated methods
First Claim
1. A photosensitive imager device, comprising:
- a semiconductor substrate having a light-incident surface, a back surface opposed to said light-incident surface and at least one side surface, said semiconductor substrate having multiple doped regions forming at least one junction, said side surface having at least a textured region coupled to the semiconductor substrate and positioned to interact with electromagnetic radiation to provide reflection of radiation so as to increase effective absorption of radiation in the semiconductor substrate;
wherein said textured region comprises surface features with sizes in a range of about 50 nm to about 2 microns, andan electrical transfer element coupled to the semiconductor substrate and operable to transfer an electrical signal from the at least one junction.
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Abstract
Photosensitive devices and associated methods are provided. In one aspect, for example, a photosensitive imager device can include a semiconductor substrate having multiple doped regions forming at least one junction, a textured region coupled to the semiconductor substrate and positioned to interact with electromagnetic radiation, and an electrical transfer element coupled to the semiconductor substrate and operable to transfer an electrical signal from the at least one junction. In one aspect, the textured region is operable to facilitate generation of an electrical signal from the detection of infrared electromagnetic radiation. In another aspect, interacting with electromagnetic radiation further includes increasing the semiconductor substrate'"'"'s effective absorption wavelength as compared to a semiconductor substrate lacking a textured region.
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Citations
14 Claims
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1. A photosensitive imager device, comprising:
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a semiconductor substrate having a light-incident surface, a back surface opposed to said light-incident surface and at least one side surface, said semiconductor substrate having multiple doped regions forming at least one junction, said side surface having at least a textured region coupled to the semiconductor substrate and positioned to interact with electromagnetic radiation to provide reflection of radiation so as to increase effective absorption of radiation in the semiconductor substrate;
wherein said textured region comprises surface features with sizes in a range of about 50 nm to about 2 microns, andan electrical transfer element coupled to the semiconductor substrate and operable to transfer an electrical signal from the at least one junction. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 10)
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9. A photosensitive imager device, comprising:
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a semiconductor substrate having a light-incident surface, a back surface opposed to said light-incident surface and at least one side surface, said semiconductor substrate further having multiple doped regions forming at least one junction, said side surface having at least a textured region coupled to the semiconductor substrate and positioned to interact with electromagnetic radiation to provide reflection of radiation so as to increase effective absorption of radiation in the semiconductor substrate, wherein said textured region comprises surface features with sizes in a range of about 50 nm to about 2 microns; and at least 4 transistors coupled to the semiconductor substrate and with at least one of the transistors electrically coupled to the at least one junction.
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11. A photosensitive imager device, comprising:
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a semiconductor substrate having a light-incident surface, a back surface opposed to said light-incident surface and at least one side surface, said semiconductor substrate having multiple doped regions forming at least one junction, said side surface having at least a textured region coupled to the semiconductor substrate and positioned to interact with electromagnetic radiation;
wherein said textured region comprises surface features with sizes in a range of about 50 nm to about 2 microns, andan electrical transfer element coupled to the semiconductor substrate and operable to transfer an electrical signal from the at least one junction, wherein the transfer element is selected from the group consisting of a transistor, a sensing node, a transfer gate, and combinations thereof. - View Dependent Claims (12, 13, 14)
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Specification