Semiconductive device and associated method of manufacture
First Claim
1. A semiconductive device comprising a body having:
- a first surface and an opposing second surface;
a first semiconductive layer adjacent to the first surface;
an active region comprising;
a plurality of active trenches in the first surface, each of the plurality of active trenches extending from the first surface into the first semiconductive layer and having an active trench width, anda plurality of active cells, each active cell provided in the first semiconductive layer adjacent to a separate one of the plurality of active trenches, each of the active cells having an active cell width between an adjacent pair of the active trenches; and
a termination region at a periphery of the first surface comprising;
at least two termination trenches, each of the at least two termination trenches extending from the first surface into the first semiconductive layer and having a termination trench width, andat least one termination trench separator separating the at least two termination trenches and having a width that is less than the active cell width and the termination trench width, wherein the termination region has a width that is greater than the active trench width,wherein the active trenches and the at least two termination trenches each comprise a first insulator layer adjacent to the first semiconductive layer of the body, and wherein conductive material is disposed on the first insulator layer within each of the active trenches.
12 Assignments
0 Petitions
Accused Products
Abstract
A semiconductive device comprising a body having: a first surface and an opposing second surface; a first semiconductive layer adjacent to the first surface; an active region comprising: a plurality of active trenches in the first surface, extending from the first surface into the first semiconductive layer, and having an active trench width, and a plurality of active cells; and a termination region at a periphery of the first surface comprising: at least one termination trench extending from the first surface into the first semiconductive layer, wherein the termination region has a width that is greater than the active trench width; and a number of termination trench separators having a width that is less than a width of the active cells, wherein the active trenches and the at least one termination trench each comprise a first insulator layer adjacent to the first semiconductive layer of the body.
12 Citations
17 Claims
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1. A semiconductive device comprising a body having:
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a first surface and an opposing second surface; a first semiconductive layer adjacent to the first surface; an active region comprising; a plurality of active trenches in the first surface, each of the plurality of active trenches extending from the first surface into the first semiconductive layer and having an active trench width, and a plurality of active cells, each active cell provided in the first semiconductive layer adjacent to a separate one of the plurality of active trenches, each of the active cells having an active cell width between an adjacent pair of the active trenches; and a termination region at a periphery of the first surface comprising; at least two termination trenches, each of the at least two termination trenches extending from the first surface into the first semiconductive layer and having a termination trench width, and at least one termination trench separator separating the at least two termination trenches and having a width that is less than the active cell width and the termination trench width, wherein the termination region has a width that is greater than the active trench width, wherein the active trenches and the at least two termination trenches each comprise a first insulator layer adjacent to the first semiconductive layer of the body, and wherein conductive material is disposed on the first insulator layer within each of the active trenches. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
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14. A semiconductive apparatus comprising:
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an active region of a semiconductive layer; each of a plurality of active trenches configured and arranged in the active region and having an active trench width; each of a plurality of active cells configured and arranged adjacent to one of the active trenches and having an active cell width; and a termination region adjacent to the active region and having a width that is greater than the active trench width, a plurality of termination trenches extending into the semiconductive layer, a plurality of termination trench separators separating each of the plurality of termination trenches, wherein each termination trench separator has a width that is less than the active cell width and the termination trench width, and a trench surface density greater than a trench surface density of the active region. - View Dependent Claims (15, 16)
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17. A semiconductive device comprising a body having:
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a first surface and an opposing second surface; a first semiconductive layer adjacent to the first surface; an active region comprising; a plurality of active trenches in the first surface, the plurality of active trenches extending from the first surface into the first semiconductive layer and having an active trench width, and a plurality of active cells, each active cell provided in the first semiconductive layer adjacent to an active trench, each of the active cells having an active cell width between an adjacent pair of the plurality of active trenches; and a termination region at a periphery of the first surface comprising; at least two termination trenches, each of the at least two termination trenches extending from the first surface into the first semiconductive layer and having a termination trench width, and at least one termination trench separator separating the at least two termination trenches and having a width that is less than the terminal trench width of each of the at least two termination trenches and the active cell width, wherein the termination region has a width that is greater than the active trench width, wherein the width of trench separator is at least one tenth the width of the terminal trench width, wherein the active trenches and the at least two termination trenches each comprise a first insulator layer adjacent to the first semiconductive layer of the body, and wherein the first insulator layer has a conductive material disposed thereon in each of the active trenches.
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Specification