RB-IGBT

• US 9,911,839 B2
• Filed: 12/26/2016
• Issued: 03/06/2018
• Est. Priority Date: 02/19/2016
• Status: Active Grant

• Current Assignee: Fuji Electric Company Limited (Fuji Electric Systems Company Limited)
• Original Assignee: Fuji Electric Company Limited (Fuji Electric Systems Company Limited)
• Inventors: Lu, Hong-fei
• Primary Examiner(s): Luu, Chuong A
• Application Number:
  US15/390,680
• Publication Number:
  US 20170243962A1
• Time in Patent Office: 435 Days
• Field of Search: 257144
• CPC Class Codes: H01L 29/0619 with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
• CPC Class Codes: H01L 29/0649 Dielectric regions, e.g. SiO2 regions, air gaps
• CPC Class Codes: H01L 29/0696 of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
• CPC Class Codes: H01L 29/0804 Emitter regions of bipolar transistors
• CPC Class Codes: H01L 29/0821 Collector regions of bipolar transistors
• CPC Class Codes: H01L 29/1095 Body region, i.e. base region, of DMOS transistors or IGBTs cell layout H01L29/0696
• CPC Class Codes: H01L 29/404 Multiple field plate structures
• CPC Class Codes: H01L 29/407 Recessed field plates, e.g. trench field plates, buried field plates
• CPC Class Codes: H01L 29/417 carrying the current to be rectified, amplified or switched
• CPC Class Codes: H01L 29/41708 Emitter or collector electrodes for bipolar transistors
• CPC Class Codes: H01L 29/66333 Vertical insulated gate bipolar transistors
• CPC Class Codes: H01L 29/66348 with a recessed gate
• CPC Class Codes: H01L 29/7395 Vertical transistors, e.g. vertical IGBT
• CPC Class Codes: H01L 29/7397 and a gate structure lying on a slanted or vertical surface or formed in a groove, e.g. trench gate IGBT

Abstract

An RB-IGBT is provided that has a new emitter trench structure with improved breakdown voltage achieved by improving the electrical field distribution of the drift region. The RB-IGBT includes an isolation region having a first conductivity type on a side surface of a semiconductor substrate. The semiconductor substrate includes a drift region having a second conductivity type; a collector region having the first conductivity type and provided farther downward than the drift region; and an emitter trench portion provided extending to the drift region in a thickness direction from a front surface to a back surface of the semiconductor substrate. The emitter trench portion includes a trench electrode electrically connected to an emitter electrode provided above the semiconductor substrate; an upper trench insulating film directly contacting a bottom portion and side portions of the trench electrode; and a lower trench insulating film provided below the upper trench insulating film.

Claims

1. An RB-IGBT including an isolation region having a first conductivity type on a side surface of a semiconductor substrate, wherein

the semiconductor substrate includes:

a drift region having a second conductivity type;

a collector region having the first conductivity type and provided farther downward than the drift region; and

an emitter trench portion provided extending to the drift region in a thickness direction that is from a front surface of the semiconductor substrate to a back surface of the semiconductor substrate, and

the emitter trench portion includes;

an upper portion filled by a trench electrode that is electrically connected to an emitter electrode provided above the semiconductor substrate and an upper trench insulating film that directly contacts a bottom portion and side portions of the trench electrode; and

a lower portion entirely filled by a lower trench insulating film provided below the upper trench insulating film.

2. The RB-IGBT according to claim 1, wherein

the lower trench insulating film has a dielectric constant that is lower than a dielectric constant of a semiconductor material of the drift region.

3. The RB-IGBT according to claim 2, wherein

the dielectric constant of the lower trench insulating film is less than 12.

4. The RB-IGBT according to claim 1, wherein

a length of the trench electrode from a peak portion thereof to a bottom portion thereof is greater than or equal to 10 μ

m and less than or equal to 20 μ

m, and

a length from the bottom portion of the trench electrode to a bottom portion of the lower trench insulating film is greater than or equal to 40 μ

m and less than or equal to 50 μ

m.

5. The RB-IGBT according to claim 1, wherein

a bottom portion of the emitter trench portion is separated from the back surface of the semiconductor substrate by a distance that is greater than or equal to 10 μ

m and less than or equal to 20 μ

m.

6. The RB-IGBT according to claim 1, further comprising:

a second semiconductor region that is provided on top of the drift region and has an impurity concentration of impurities having the second conductivity type that is higher than an impurity concentration of impurities having the second conductivity type of the drift region, wherein

the second semiconductor region is adjacent to the upper trench insulating film in a direction orthogonal to the thickness direction of the semiconductor substrate.

7. The RB-IGBT according to claim 6, wherein

a boundary between the second semiconductor region and the drift region in the thickness direction of the semiconductor substrate is positioned farther upward than the bottom portion of the trench electrode.

8. The RB-IGBT according to claim 6, further comprising:

a well region having the first conductivity type and positioned on the front surface side of the semiconductor substrate; and

a first semiconductor region having the second conductivity type and provided between the well region and the second semiconductor region.

9. The RB-IGBT according to claim 6, wherein

an integrated value of the impurity concentration of impurities having the second conductivity type in the first and second semiconductor region from a boundary between the second semiconductor region and the drift region to the front surface of the semiconductor substrate is greater than or equal to 1E+11 cm⁻

2 and less than or equal to 5E+11 cm<sup>−

2</sup>.

10. The RB-IGBT according to claim 6, further comprising:

a third semiconductor region having the second conductivity type between the collector region having the first conductivity type and the drift region having the second conductivity type.

11. The RB-IGBT according to claim 10, wherein

an integrated value of the impurity concentration of impurities having the second conductivity type in the third semiconductor region from a boundary between the third semiconductor region and the collector region to a boundary between the third semiconductor region and the drift region is greater than or equal to 3E+11 cm⁻

2 and less than or equal to 10E+11 cm<sup>−

2</sup>.

12. The RB-IGBT according to claim 1, wherein

when the front surface of the semiconductor substrate is seen from an overhead view, the emitter trench portion is provided with a ring shape in a manner to sandwich at least one channel formation region that is directly below a gate electrode provided with a stripe shape.