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RB-IGBT

  • US 9,911,839 B2
  • Filed: 12/26/2016
  • Issued: 03/06/2018
  • Est. Priority Date: 02/19/2016
  • Status: Active Grant
First Claim
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1. An RB-IGBT including an isolation region having a first conductivity type on a side surface of a semiconductor substrate, whereinthe semiconductor substrate includes:

  • a drift region having a second conductivity type;

    a collector region having the first conductivity type and provided farther downward than the drift region; and

    an emitter trench portion provided extending to the drift region in a thickness direction that is from a front surface of the semiconductor substrate to a back surface of the semiconductor substrate, andthe emitter trench portion includes;

    an upper portion filled by a trench electrode that is electrically connected to an emitter electrode provided above the semiconductor substrate and an upper trench insulating film that directly contacts a bottom portion and side portions of the trench electrode; and

    a lower portion entirely filled by a lower trench insulating film provided below the upper trench insulating film.

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