Semiconductor device and method for manufacturing the same
First Claim
1. A semiconductor device comprising:
- a substrate; and
a transistor over the substrate, the transistor comprising;
an oxide semiconductor film comprising a first oxide semiconductor region and a pair of second oxide semiconductor regions;
a gate insulating film over the oxide semiconductor film; and
a gate electrode over the first oxide semiconductor region with the gate insulating film interposed therebetween,wherein the first oxide semiconductor region is located between the pair of second oxide semiconductor regions,wherein the first oxide semiconductor region comprises c-axis-aligned crystalline oxide semiconductor comprising indium, gallium, and zinc,wherein the pair of second oxide semiconductor regions comprises an amorphous region, andwherein proportion of the amorphous region in each of the pair of second oxide semiconductor regions is larger than proportion of an amorphous region in the first oxide semiconductor region.
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Abstract
A miniaturized semiconductor device including a transistor in which a channel formation region is formed using an oxide semiconductor film and variation in electric characteristics due to a short-channel effect is suppressed is provided. In addition, a semiconductor device whose on-state current is improved is provided. A semiconductor device is provided with an oxide semiconductor film including a pair of second oxide semiconductor regions which are amorphous regions and a first oxide semiconductor region located between the pair of second oxide semiconductor regions, a gate insulating film, and a gate electrode provided over the first oxide semiconductor region with the gate insulating film interposed therebetween. One or more kinds of elements selected from Group 15 elements such as nitrogen, phosphorus, and arsenic are added to the second oxide semiconductor regions.
167 Citations
15 Claims
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1. A semiconductor device comprising:
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a substrate; and a transistor over the substrate, the transistor comprising; an oxide semiconductor film comprising a first oxide semiconductor region and a pair of second oxide semiconductor regions; a gate insulating film over the oxide semiconductor film; and a gate electrode over the first oxide semiconductor region with the gate insulating film interposed therebetween, wherein the first oxide semiconductor region is located between the pair of second oxide semiconductor regions, wherein the first oxide semiconductor region comprises c-axis-aligned crystalline oxide semiconductor comprising indium, gallium, and zinc, wherein the pair of second oxide semiconductor regions comprises an amorphous region, and wherein proportion of the amorphous region in each of the pair of second oxide semiconductor regions is larger than proportion of an amorphous region in the first oxide semiconductor region. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A semiconductor device comprising:
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a substrate; and a transistor over the substrate, the transistor comprising; a gate electrode; a gate insulating film over the gate electrode; and an oxide semiconductor film comprising a first oxide semiconductor region and a pair of second oxide semiconductor regions over the gate insulating film, wherein the first oxide semiconductor region is located between the pair of second oxide semiconductor regions, wherein the first oxide semiconductor region comprises c-axis-aligned crystalline oxide semiconductor comprising indium, gallium, and zinc, wherein the pair of second oxide semiconductor regions comprises an amorphous region, and wherein proportion of the amorphous region in each of the pair of second oxide semiconductor regions is larger than proportion of an amorphous region in the first oxide semiconductor region. - View Dependent Claims (9, 10, 11, 12, 13, 14, 15)
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Specification