Semiconductor light emitting device growing active layer on textured surface
First Claim
1. A device comprising:
- a III-nitride semiconductor structure comprising;
a first n-type layer including a textured surface, the textured surface having a cross sectional profile of peaks alternating with valleys; and
a second n-type layer with at least partial strain relief grown over the textured surface, the layer with at least partial strain relief comprising islands formed on the peaks, the islands expanding laterally to provide the at least partial strain relief;
a light emitting layer with at least partial strain relief, the light emitting layer having a top surface that is planar and not textured, the light emitting layer being disposed on the second n-type layer within 1000 angstroms of the textured surface; and
a p-type region disposed over the light emitting layer.
6 Assignments
0 Petitions
Accused Products
Abstract
In accordance with embodiments of the invention, at least partial strain relief in a light emitting layer of a III-nitride light emitting device is provided by configuring the surface on which at least one layer of the device grows such that the layer expands laterally and thus at least partially relaxes. This layer is referred to as the strain-relieved layer. In some embodiments, the light emitting layer itself is the strain-relieved layer, meaning that the light emitting layer is grown on a surface that allows the light emitting layer to expand laterally to relieve strain. In some embodiments, a layer grown before the light emitting layer is the strain-relieved layer. In a first group of embodiments, the strain-relieved layer is grown on a textured surface.
30 Citations
8 Claims
-
1. A device comprising:
a III-nitride semiconductor structure comprising; a first n-type layer including a textured surface, the textured surface having a cross sectional profile of peaks alternating with valleys; and a second n-type layer with at least partial strain relief grown over the textured surface, the layer with at least partial strain relief comprising islands formed on the peaks, the islands expanding laterally to provide the at least partial strain relief; a light emitting layer with at least partial strain relief, the light emitting layer having a top surface that is planar and not textured, the light emitting layer being disposed on the second n-type layer within 1000 angstroms of the textured surface; and a p-type region disposed over the light emitting layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
Specification