Light emitting apparatus
First Claim
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1. A light emitting device comprising:
- a conductive support substrate;
a metal layer including a bonding metal layer, a recess, an ohmic layer and a reflective layer, and the metal layer is provided on the conductive support substrate;
a light emitting structure layer on the metal layer and having an inclined side surface, wherein the light emitting structure layer including a first conductive semiconductor, an active layer and a second conductive semiconductor layer;
a protection layer provided on the conductive support substrate, and a portion of the protection layer is provided between the metal layer and the light emitting structure layer, wherein the ohmic layer directly contacts a side surface of the protection layer, and the reflective layer directly contacts a bottom surface of the ohmic layer;
a passivation layer on the light emitting structure layer; and
an electrode structure at least partially overlapping the protection layer and disposed on the light emitting structure layer,wherein the electrode structure includes;
an outer electrode including a first part and a second part,an inner electrode provided in a region between the first part and the second part of the outer electrode and extending to electrically connect the first part of the outer electrode with the second part of the outer electrode,a pad electrically connected to at least one of the first part or the second part of the outer electrode,wherein the outer electrode is spaced apart from an outermost side of a top of the light emitting structure layer, and wherein the outer electrode is disposed within 50 μ
m from the outermost side of the top of the light emitting structure layer,wherein a vertical axis is defined as being perpendicular to a bottom surface of the bonding metal layer, wherein the portion of the protection layer is vertically overlapped with the passivation layer such that the portion of the protection layer and the passivation layer are aligned along the vertical axis, andwherein the vertical axis is in a vertical direction, and wherein a portion of the bonding metal layer, a portion of the reflective layer and a portion of the ohmic layer are overlapped in the vertical direction of the vertical axis such that the portion of the reflective layer is between the portion of the ohmic layer and the portion of the bonding metal layer.
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Abstract
A light emitting device including a contact layer, a blocking layer over the contact layer, a protection layer adjacent the blocking layer, a light emitter over the blocking layer, and an electrode layer coupled to the light emitter. The electrode layer overlaps the blocking layer and protection layer, and the blocking layer has an electrical conductivity that substantially blocks flow of current from the light emitter in a direction towards the contact layer. In addition, the protection layer may be conductive to allow current to flow to the light emitter or non-conductive to block current from flowing from the light emitter towards the contact layer.
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Citations
34 Claims
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1. A light emitting device comprising:
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a conductive support substrate; a metal layer including a bonding metal layer, a recess, an ohmic layer and a reflective layer, and the metal layer is provided on the conductive support substrate; a light emitting structure layer on the metal layer and having an inclined side surface, wherein the light emitting structure layer including a first conductive semiconductor, an active layer and a second conductive semiconductor layer; a protection layer provided on the conductive support substrate, and a portion of the protection layer is provided between the metal layer and the light emitting structure layer, wherein the ohmic layer directly contacts a side surface of the protection layer, and the reflective layer directly contacts a bottom surface of the ohmic layer; a passivation layer on the light emitting structure layer; and an electrode structure at least partially overlapping the protection layer and disposed on the light emitting structure layer, wherein the electrode structure includes; an outer electrode including a first part and a second part, an inner electrode provided in a region between the first part and the second part of the outer electrode and extending to electrically connect the first part of the outer electrode with the second part of the outer electrode, a pad electrically connected to at least one of the first part or the second part of the outer electrode, wherein the outer electrode is spaced apart from an outermost side of a top of the light emitting structure layer, and wherein the outer electrode is disposed within 50 μ
m from the outermost side of the top of the light emitting structure layer,wherein a vertical axis is defined as being perpendicular to a bottom surface of the bonding metal layer, wherein the portion of the protection layer is vertically overlapped with the passivation layer such that the portion of the protection layer and the passivation layer are aligned along the vertical axis, and wherein the vertical axis is in a vertical direction, and wherein a portion of the bonding metal layer, a portion of the reflective layer and a portion of the ohmic layer are overlapped in the vertical direction of the vertical axis such that the portion of the reflective layer is between the portion of the ohmic layer and the portion of the bonding metal layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 23, 24, 25, 26, 29, 32, 33, 34)
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13. A light emitting device comprising:
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a conductive support substrate; a metal layer including a recess and on the conductive support substrate, the metal layer having an uneven structure; an ohmic layer having a top surface and a bottom surface; a reflective layer between the metal layer and the ohmic layer; a light emitting structure layer on the metal layer and having an inclined side surface, wherein the light emitting structure layer including a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer; a current blocking layer disposed at an area between the second conductive semiconductor layer and the recess of the metal layer; a protection layer on the conductive support substrate, and a portion of the protection layer is provided between the metal layer and the light emitting structure layer, wherein the ohmic layer directly contacts a side surface of the protection layer, and the reflective layer directly contacts a bottom surface of the ohmic layer; a passivation layer on the light emitting structure layer; and an electrode structure at least partially overlapping the protection layer and disposed on the light emitting structure layer, wherein the electrode structure includes; an outer electrode including a first part and a second part, an inner electrode provided in a region between the first part and the second part of the outer electrode and extending to electrically connect the first part of the outer electrode with the second part of the outer electrode, a pad electrically connected to at least one of the first part or the second part of the outer electrode, wherein the outer electrode is spaced apart from an outermost side of a top of the light emitting structure layer, and wherein the outer electrode is disposed within 50 μ
m from the outermost side of the top of the light emitting structure layer,wherein a vertical axis is defined as being perpendicular to a bottom surface of the light emitting structure layer, wherein the portion of the protection layer is vertically overlapped with the passivation layer such that the portion of the protection layer and the passivation layer are aligned along the vertical axis, wherein the vertical axis is in a vertical direction, wherein a portion of the metal layer, a portion of the reflective layer, a portion of the ohmic layer and a portion of the current blocking layer are overlapped in the vertical direction of the vertical axis such that the portion of the ohmic layer is between the portion of the current blocking layer and the portion of the reflective layer, and such that the portion of the reflective layer is between the portion of the ohmic layer and the portion of the metal layer, and a lateral width of the portion of the reflective layer is greater than a lateral width of the current blocking layer. - View Dependent Claims (14, 15, 16, 17, 27, 28, 30)
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18. A light emitting device comprising:
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a conductive support substrate; a metal layer including a recess and on the conductive support substrate, the metal layer having an uneven structure; an ohmic layer having a top surface and a bottom surface; a reflective layer between the metal layer and the ohmic layer; a light emitting structure layer on the metal layer and having an inclined side surface, wherein the light emitting structure layer including a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer; a current blocking layer disposed at an area between the second conductive semiconductor layer and the recess of the metal layer; a protection layer on the conductive support substrate, and a portion of the protection layer is provided between the metal layer and the light emitting structure layer, the inclined side surface of the light emitting structure layer at least partially overlapping the protection layer, wherein the ohmic layer directly contacts a side surface of the protection layer, and the reflective layer directly contacts a bottom surface of the ohmic layer; a passivation layer on the light emitting structure layer; and an electrode structure at least partially overlapping the protection layer and disposed on the light emitting structure layer, wherein the electrode structure includes an outer electrode including a first part and a second part, an inner electrode provided in a region between the first part and the second part of the outer electrode and extending to electrically connect the first part of the outer electrode with the second part of the outer electrode, and a pad electrically connected to at least one of the first part or the second part of the outer electrode, wherein the outer electrode is spaced apart from an outermost side of a top of the light emitting structure layer, and wherein the outer electrode is disposed within 50 μ
m from the outermost side of the top of the light emitting structure layer,wherein a bottom surface of the protection layer contacts a top surface of the metal layer, wherein the side surface of the protection layer contacts a side surface of the ohmic layer, wherein the current blocking layer has a width that is about 0.9˜
1.3 times a width of the inner electrode,wherein a vertical axis is defined as being perpendicular to a bottom surface of the light emitting structure layer, wherein the portion of the protection layer is vertically overlapped with the passivation layer such that the portion of the protection layer and the passivation layer are aligned along the vertical axis, wherein the vertical axis is in a vertical direction, wherein a portion of the metal layer, a portion of the reflective layer, a portion of the ohmic layer and a portion of the current blocking layer are overlapped in the vertical direction of the vertical axis such that the portion of the ohmic layer is between the portion of the current blocking layer and the portion of the reflective layer, and such that the portion of the reflective layer is between the portion of the ohmic layer and the portion of the metal layer, and a lateral width of the portion of the reflective layer is greater than a lateral width of the current blocking layer. - View Dependent Claims (19, 20, 21, 22, 31)
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Specification