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Method and system for overcurrent protection for insulated-gate bipolar transistor (IGBT) modules

  • US 9,912,225 B2
  • Filed: 01/29/2016
  • Issued: 03/06/2018
  • Est. Priority Date: 10/30/2015
  • Status: Active Grant
First Claim
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1. A driving circuit for driving a load, comprising:

  • first and second switching devices electrically connected with each other in parallel;

    a current sensing circuit configured to generate a current sensing signal indicating a value of a current flowing through the first switching device, the current sensing signal including an offset caused by parasitic inductance imbalance in electrical connections connecting the first and second switching devices;

    a driver circuit electrically connected to the first and second switching devices and configured to control switching operations of the first and second switching devices, the driver circuit including an overcurrent protection circuit electrically connected to the current sensing circuit for receiving the current sensing signal;

    a current sensing signal correction circuit configured to reduce the offset in the current sensing signal received by the overcurrent protection circuit during a switching transient period; and

    a Kelvin emitter resistor electrically connected to a first emitter terminal of the first switching device,wherein the current sensing signal correction circuit is electrically connected with the Kelvin emitter resistor in parallel.

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