Optical metrology with small illumination spot size

• US 9,915,524 B2
• Filed: 05/11/2015
• Issued: 03/13/2018
• Est. Priority Date: 05/11/2015
• Status: Active Grant

• Current Assignee: KLA-Tencor Corporation
• Original Assignee: KLA-Tencor Corporation
• Inventors: Sapiens, Noam, Peterlinz, Kevin A., Buettner, Alexander, Purrucker, Kerstin, Shchegrov, Andrei V.
• Primary Examiner(s): BOLOGNA, DOMINIC JOSEPH
• Application Number:
  US14/708,454
• Publication Number:
  US 20160334326A1
• Time in Patent Office: 1,037 Days
• CPC Class Codes: G01B 11/24 for measuring contours or curvatures
• CPC Class Codes: G01B 2210/56 Measuring geometric parameters of semiconductor structures, e.g. profile, critical dimensions or trench depth
• CPC Class Codes: G01N 2021/213 Spectrometric ellipsometry
• CPC Class Codes: G01N 21/956 Inspecting patterns on the surface of objects contactless testing of electronic circuits G01R31/308; testing currency G07D; manufacturing processes per se of semiconductor devices implementing a measuring step H01L22/10
• CPC Class Codes: G03F 7/70625 Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness

Abstract

Methods and systems are presented to reduce the illumination spot size projected onto a measurement target and associated spillover onto area surrounding a measurement target. In one aspect, a spatial light modulator (SLM) is located in the illumination path between the illumination light source and the measurement sample. The SLM is configured to modulate amplitude, phase, or both, across the path of the illumination light to reduce wavefront errors. In some embodiments, the desired state of the SLM is based on wavefront measurements performed in an optical path of the metrology system. In another aspect, an illumination aperture having an image plane tilted at an oblique angle with respect to a beam of illumination light is employed to overcome defocusing effects in metrology systems that employ oblique illumination of the measurement sample. In some embodiments, the illumination aperture, objective lens, and specimen are aligned to satisfy the Scheimpflug condition.

Claims

1. A metrology system comprising:

an illumination source configured to generate an amount of illumination light;

an illumination optics subsystem configured to direct the amount of illumination light from the illumination source to a specimen under measurement, wherein the illumination optics subsystem includes;

a spatial light modulator disposed in a path of the illumination light from the illumination source to the specimen under measurement, wherein the spatial light modulator is configured to modulate amplitude, phase, or a combination of amplitude and phase across the path of the illumination light and generate a wavefront distortion over a portion of the illumination light that is same for all wavelengths of the amount of illumination light;

a detector configured to generate a plurality of output signals indicative of a response of the specimen to the amount of illumination light; and

a collection optics subsystem configured to collect an amount of collected light from the surface of the specimen and direct the amount of collected light to the detector.

2. The metrology system of claim 1, wherein the spatial light modulator is any of a deformable mirror device, a pixelated mirror device, a transmissive liquid crystal display device, and a reflective liquid crystal on silicon device.

3. The metrology system of claim 1, further comprising:

a controller configured to;

transmit a command signal to the spatial light modulator to alter a state of the spatial light modulator to achieve a desired amplitude profile, phase profile, or a combination of the amplitude profile and the phase profile across the path of the illumination light.

4. The metrology system of claim 3, further comprising:

a wavefront sensor configured to measure amplitude, phase, or both amplitude and phase across the illumination light or across the collected light.

5. The metrology system of claim 4, wherein the controller is further configured to:

receive an indication of a measurement of amplitude, phase, or both amplitude and phase across the illumination light by the wavefront sensor; and

determine the desired amplitude profile, phase profile, or both the desired amplitude profile and the desired phase profile across the path of the illumination light based at least in part on the measurement of amplitude, phase, or both amplitude and phase across the illumination light by the wavefront sensor.

6. The metrology system of claim 3, wherein the wavefront sensor is disposed in the collection path.

7. The metrology system of claim 3, wherein the wavefront sensor is disposed in the illumination path.

8. The metrology system of claim 3, wherein the desired amplitude profile, phase profile, or both the desired amplitude profile and the desired phase profile across the path of the illumination light of the metrology system matches a desired amplitude profile, phase profile, or both the desired amplitude profile and the desired phase profile across the path of the illumination light of another metrology system or group of metrology systems.

9. The metrology system of claim 3, wherein the desired amplitude profile, phase profile, or combination of the amplitude profile and phase profile across the path of the illumination light is selected to match the amplitude profile, phase profile, or combination of the amplitude profile and phase profile of a reference metrology system.

10. The metrology system of claim 1, wherein a measurement box size of the metrology system is less than 30 micrometers in any direction.

11. The metrology system of claim 1, wherein a measurement box size of the metrology system is less than 10 micrometers in any direction.

12. The metrology system of claim 1, wherein the metrology system is an ellipsometer, wherein the amount of illumination light is directed to the specimen under measurement at one or more angles of incidence.

13. The metrology system of claim 12, wherein the ellipsometer is configured to perform Mueller Matrix measurements.

14. The metrology system of claim 1, wherein the metrology system is configured to perform any of film metrology, composition metrology, critical dimension metrology, shape metrology, and overlay metrology.

15. A method comprising:

receiving an amount of illumination light from an illumination source;

modulating an amplitude profile, a phase profile, or both the amplitude profile and the phase profile across a path of the illumination light from the illumination source to a surface of a specimen under measurement such that a wavefront distortion is generated over a portion of the illumination light that is same for all wavelengths of the amount of illumination light;

directing an amount of collected light from the surface of the specimen to a detector; and

generating a plurality of output signals from the collected light, wherein the output signals are indicative of a response of the specimen to the amount of modulated illumination light.

16. The method of claim 15, further comprising:

determining an estimate of a structural parameter based at least in part on the plurality of output signals.

17. The method of claim 15, further comprising:

determining a desired amplitude profile, phase profile, or both the desired amplitude profile and the desired phase profile of the modulated of the illumination light; and

transmitting a command signal to a spatial light modulator to alter a state of the spatial light modulator to achieve the desired amplitude profile, phase profile, or a combination of the amplitude profile and the phase profile.

18. The method of claim 17, further comprising:

measuring the amplitude, phase, or both the amplitude and the phase across the modulated illumination light or across the collected light, and wherein the determining the desired amplitude profile, phase profile, or both the desired amplitude profile and the desired phase profile is based at least in part on measured amplitude, phase, or both amplitude and phase.

19. The method of claim 15, wherein the modulating the phase profile across the path of the illumination light involves reflecting the illumination light from a deformable mirror having a programmable surface profile.

20. A metrology system comprising:

an illumination source configured to generate an amount of illumination light;

an illumination optics subsystem configured to direct the amount of illumination light from the illumination source to a specimen under measurement, the illumination optics subsystem including a spatial light modulator disposed in a path of the illumination light from the illumination source to the specimen under measurement, wherein the spatial light modulator is configured to modulate amplitude, phase, or a combination of amplitude and phase across the path of the illumination light and generate a wavefront distortion over a portion of the illumination light that is same for all wavelengths of the amount of illumination light;

a collection optics subsystem configured to collect an amount of collected light from the surface of the specimen and direct the amount of collected light to a detector;

a wavefront sensor configured to measure amplitude, phase, or both amplitude and phase across the illumination light or across the collected light; and

a computing system configured to;

receive an indication of the measurement of amplitude, phase, or both amplitude and phase by the wavefront sensor; and

transmit a command signal to the spatial light modulator to alter a state of the spatial light modulator to achieve a desired amplitude profile, phase profile, or a combination of the amplitude profile and the phase profile across the path of the illumination light based at least in part on the measurement of amplitude, phase, or both amplitude and phase by the wavefront sensor.